Kerstin Worhoff

Quantum Walks of Correlated Photons

A Correlated Quantum Walk Random walks are powerful tools for modeling statistical events. The analogous quantum walk involves particles tunneling between available sites. Peruzzo et al. (p. 1500; see the Perspective by Hillery) now report on the quantum walk of a correlated pair of photons propagating through a coupled waveguide array. The output pattern resulting from the injection of two correlated photons possess quantum features, indicating that the photons retain their correlations as they walk randomly through the waveguide array, allowing scale-up and parallel searches over many possible paths. Pairs of correlated photons retain their quantum-mechanical correlations as they propagate through a waveguide maze. Quantum walks of correlated particles offer the possibility of studying large-scale quantum interference; simulating biological, chemical, and physical systems; and providing a route to universal quantum computation. We have demonstrated quantum walks of two identical photons in an array of 21 continuously evanescently coupled waveguides in a SiOxNy chip. We observed quantum correlations, violating a classical limit by 76 standard deviations, and found that the correlations depended critically on the input state of the quantum walk. These results present a powerful approach to achieving quantum walks with correlated particles to encode information in an exponentially larger state space.

Design, tolerance analysis, and fabrication of silicon oxynitride based planar optical waveguides for communication devices

Planar optical waveguiding structures for application in communication networks are highly demanding with respect to low insertion loss, efficient fiber-to-chip coupling, polarization independent operation, high integration density, reliable fabrication, and last but not least cost efficiency. When applying silicon oxynitride, which is a very versatile material, planar waveguiding structures can be designed having the potential of meeting all those requirements. In this paper, we will describe the design of such a waveguiding structure, demonstrate the practical feasibility of realizing this structure and discuss the preliminary measurement results.

Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al2O3:Er3+ optical amplifiers on silicon

Erbium-doped aluminum oxide integrated optical amplifiers were fabricated on silicon substrates, and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2×1020 cm−3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2×1020 cm−3, an internal net gain was obtained over a wavelength range of 80 nm(1500-1580 nm), and a peak gain of 2.0 dB/cm was measured at 1533 nm. The broadband and high peak gain are attributed to an optimized fabrication process, improved waveguide design, and pumping at 977 nm as opposed to 1480 nm. In a 5.4-cm-long amplifier, a total internal net gain of up to 9.3 dB was measured. By use of a rate-equation model, an internal net gain of 33 dB at the 1533 nm gain peak and more than 20 dB for all wavelengths within the telecom C-band (1525-1565 nm) are predicted for a launched signal power of 1 μW when launching 100 mW of pump power into a 24-cm-long amplifier. The high optical gain demonstrates that Al2O3:Er3+ is a competitive technology for active integrated optics.

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

Silicon Oxynitride (SiON) layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition (PECVD). The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness (δd<1%), high homogeneity of the refractive index (Δn=2–7×10−4) and good reproducibility of the layer parameters. The optical losses of slab-type waveguides is determined to be as low as 0.2 dB/cm at 632.8 nm wavelength. Due to absorption of N–H and Si–H vibrational overtones, the optical losses in the third telecommunication window, around 1550 nm, is increased to about 2 dB/cm for low index layers. By an anneal step, however, the hydrogen content of the films can be reduced as is confirmed by IR-spectroscopy and the optical losses decrease to below 0.2 dB/cm. Based on the optimized PECVD SiON technology, a layer structure fulfilling the strong requirements of telecommunication devices, is designed for operation at 1550 nm wavelength. This structure, consisting of a SiON core layer (n=1.4857) surrounded by thick oxide cladding layers (n=1.4637), has the potential for realization of channel waveguides allowing for low-loss bends with a small bending radius and high fiber-to-chip coupling efficiency.

Silicon Oxynitride A Versatile Material for Integrated Optics Applications

Silicon oxynitride is a very attractive material for integrated optics application, because of its excellent optical properties (~e.g. optical loss below 0.2 dB/cm!, the large refractive index range ~between 1.45 for silicon oxide and 2.0 for silicon nitride), and last but not least, the availability of reliable, low-cost fabrication technologies. Since good uniformity and reproducibility of the layers is extremely important for integrated optics applications, we have optimized the plasma-enhanced chemical vapor deposition and low-pressure chemical vapor deposition technologies of silicon oxynitride with respect to these requirements. Over a 50x50 mm area on a 3 inch wafer, an inhomogeneity of the refractive index of Dn<5E-3 and a nonuniformity of the layer thickness of < 1% can be obtained. Furthermore, new challenges such as the conditioning of the reactor, in order to guarantee process reproducibility in the same order of magnitude, are discussed. The high optical loss of silicon oxynitride in the third telecommunication window (wavelength range 1530-1605 nm), which is caused by the overtones of the Si-H and N-H bonds, was decreased by thermal treatment. Silicon oxynitride waveguides having a refractive index of 1.48 and an optical loss below 0.2 dB/cm (at 1550 nm) were realized.

Ultra-narrow-linewidth, single-frequency distributed feedback waveguide laser in Al2O3:Er3+ on silicon.

We report the realization and performance of a distributed feedback channel waveguide laser in erbium-doped aluminum oxide on a standard thermally oxidized silicon substrate. The diode-pumped continuous-wave laser demonstrated a threshold of 2.2 mW absorbed pump power and a maximum output power of more than 3 mW with a slope efficiency of 41.3% versus absorbed pump power. Single-longitudinal-mode and single-polarization operation was achieved with an emission linewidth of 1.70+/-0.58 kHz (corresponding to a Q factor of 1.14 x 10(11)), which was centered at a wavelength of 1545.2 nm.

Stimulated emission and optical gain in LaF3:Nd nanoparticle-doped polymer-based waveguides

We report experiments which show evidence that stimulated emission at 863 nm takes place in hybrid monomode Si3N4 waveguides where LaF3 :Nd nanoparticle-doped polymethylmethacrylate (PMMA) was used as a top cladding material. Furthermore, optical gain at 1319 nm in LaF3:Nd nanoparticle dispersed PMMA s0.1 dB/cmd and photodefinable epoxy (Microchem SU-8) multimode waveguides has been observed at pump powers below 10 mW. This class of composite materials based on polymers with dispersed nanoparticles shows promising properties for planar optical amplifiers. Simulation showed that optical gain in the order of 10 dB can be achieved at 100 mW pump power in a 20 cm long monomode waveguide.

Reliable Low-Cost Fabrication of Low-Loss Waveguides With 5.4-dB Optical Gain

A reliable and reproducible deposition process for the fabrication of Al₂O₃ waveguides with losses as low as 0.1 dB/cm has been developed. The thin films are grown at ~ 5 nm/min deposition rate and exhibit excellent thickness uniformity within 1% over 50times50 mm² area and no detectable OH^- incorporation. For applications of the Al₂O₃ films in compact, integrated optical devices, a high-quality channel waveguide fabrication process is utilized. Planar and channel propagation losses as low as 0.1 and 0.2 dB/cm, respectively, are demonstrated. For the development of active integrated optical functions, the implementation of rare-earth-ion doping is investigated by cosputtering of erbium during the Al₂O₃ layer growth. Dopant levels between 0.2-5times10²⁰ cm^-3 are studied. At Er³⁺ concentrations of interest for optical amplification, a lifetime of the ⁴I_13/2 level as long as 7 ms is measured. Gain measurements over 6.4-cm propagation length in a 700-nm-thick Al₂O₃:Er³⁺ channel waveguide result in net optical gain over a 41-nm-wide wavelength range between 1526-1567 nm with a maximum of 5.4 dB at 1533 nm.

On the experimental verification of quantum complexity in linear optics

Scalable methods employing a random unitary chip and a quantum walk chip are developed to experimentally verify correct operation for large-scale boson sampling. Experimental analysis reveals that the resulting statistics of the output of a linear interferometer fed by indistinguishable single-photon states exhibits true non-classical characteristics.

Analysis of generalized Mach-Zehnder interferometers for variable-ratio power splitting and optimized switching

The nonideal integrated optical N/spl times/N generalized Mach-Zehnder interferometer (GMZI) employing multimode interference (MMI) couplers is analyzed using transfer matrix techniques. Deviations in the phase relations and the power splitting ratio of the MMI couplers are included in the theory, along with the effects of phase errors in the interferometer arms. The predictions of the theory are compared to the response of a 4/spl times/4 GMZI which has been fabricated. The device is operated as both a variable-ratio power splitter and a switch by compensating for the phase errors in the interferometer arms, but the performance is ultimately limited by the nonideal imaging in the MMI couplers. The practicality of these applications is investigated by performing a tolerance analysis for the operation of 1/spl times/N power splitters and switches for N up to 10.