anhe Li

2.0 μm room temperature CW operation of InGaAsSb/AlGaAsSb laser with asymmetric waveguide structure

The GaInAsSb/AlGaAsSb double quantum well lasers with an emission wavelength 2.0 μm, using the separate-confinement asymmetric waveguide, have been designed and fabricated, showing high quantum efficiency and high power conversion efficiency at continuous-wave operation mode. The threshold current density of the device is as low as 92 A/cm2. The internal loss coefficient and the internal quantum efficiency are 1.0 cm−1 and 86.1%, respectively. The 35% maximum power conversion efficiency (PCE) and narrow far-field patterned were achieved.

Long wavelength strain-engineered InAs multi-layer stacks quantum dots laser diode on GaAs substrate

The growth of GaAs based 1.5 μm multi-layer stacked InAs quantum dots (QDs) has been investigated by solid-source molecular beam epitaxy (SSMBE), which was very important devices for transmission window. Owing to a strong electronic coupling between the QDs layers and the quantum wells (QWs), and antimony (Sb) introduced by for long-wavelength semiconductor lasers were obtained. The device structure for QDs laser diodes (LDs) with a cavity length of 1000 μm and stripe width of 100 μm as well as the device fabrication results will also be presented. The output performance was achieved with continuous wave (CW) operation, the measurement were from 20 to 60°C with a temperature step of 10°C. The threshold current density was 168 A/cm2, and the CW operating up to 20 mW at room temperature (RT) was achieved.

Low-Density InAs Quantum Dots Growth by Molecular Beam Epitaxy

We investigate the growth of low-density(~4×108cm-2) InAs quantum dots (QDs) on GaAs by molecular beam epitaxy,with emission wavelength up to 1.3 µm at room temperature were achieved. The QDs density are sensitive to growth temperature,growth rate.The optical properties of the QDs annealing temperature used after spacer layer growth that is attributed to the suppressed In segregation from the QDs into the cap layer, reduced the strain in the QDs,significant decrease of integrated PL intensity was observed as the annealing temperature increases.

2.2 μm InGaAsSb/AlGaAsSb laser diode under continuous wave operating at room temperature

Abstract2.2 μm InGaAsSb/AlGaAsSb Sb-based type-I laser diodes (LDs) were fabricated, with cavity lengths of 1000 μm and stripe width of 150 μm. The high output performance was achieved with the threshold current density of the device is as low as 187 A/cm2, slope efficiency of 0.2 W/A, and vertical and parallel divergent angles ϑ⊥ = 42° and ϑ| = 10°, respectively. The continuous wave operating up to 320 mW at room temperature (RT) were achieved.