E. S. Snow

Reduced Graphene Oxide Molecular Sensors

We demonstrate reduced graphene oxide as the active material for high-performance molecular sensors. Sensors are fabricated from exfoliated graphene oxide platelets that are deposited to form an ultrathin continuous network. These graphene oxide networks are tunably reduced toward graphene by varying the exposure time to a hydrazine hydrate vapor. The conductance change of the networks upon exposure to trace levels of vapor is measured as a function of the chemical reduction. The level of reduction affects both the sensitivity and the level of 1/ f noise. The sensors are capable of detecting 10 s exposures to simulants of the three main classes of chemical-warfare agents and an explosive at parts-per-billion concentrations.

Random networks of carbon nanotubes as an electronic material

We report on the transport properties of random networks of single-wall carbon nanotubes fabricated into thin-film transistors. At low nanotube densities (∼1 μm−2) the networks are electrically continuous and behave like a p-type semiconductor with a field-effect mobility of ∼10 cm2/V s and a transistor on-to-off ratio ∼105. At higher densities (∼10 μm−2) the field-effect mobility can exceed 100 cm2/V s; however, in this case the network behaves like a narrow band gap semiconductor with a high off-state current. The fact that useful device properties are achieved without precision assembly of the nanotubes suggests the random carbon nanotube networks may be a viable material for thin-film transistor applications.

Properties of Fluorinated Graphene Films

Graphene films grown on Cu foils have been fluorinated with xenon difluoride (XeF(2)) gas on one or both sides. When exposed on one side the F coverage saturates at 25% (C(4)F), which is optically transparent, over 6 orders of magnitude more resistive than graphene, and readily patterned. Density functional calculations for varying coverages indicate that a C(4)F configuration is lowest in energy and that the calculated band gap increases with increasing coverage, becoming 2.93 eV for one C(4)F configuration. During defluorination, we find hydrazine treatment effectively removes fluorine while retaining graphenes carbon skeleton. The same films may be fluorinated on both sides by transferring graphene to a silicon-on-insulator substrate enabling XeF(2) gas to etch the Si underlayer and fluorinate the backside of the graphene film to form perfluorographane (CF) for which calculated the band gap is 3.07 eV. Our results indicate single-side fluorination provides the necessary electronic and optical changes to be practical for graphene device applications.

Nerve agent detection using networks of single-walled carbon nanotubes

We report the use of carbon nanotubes as a sensor for chemical nerve agents. Thin-film transistors constructed from random networks of single-walled carbon nanotubes were used to detect dimethyl methylphosphonate (DMMP), a simulant for the nerve agent sarin. These sensors are reversible and capable of detecting DMMP at sub-ppb concentration levels, and they are intrinsically selective against interferent signals from hydrocarbon vapors and humidity. We provide additional chemical specificity by the use of filters coated with chemoselective polymer films. These results indicate that the electronic detection of sub-ppb concentrations of nerve agents and potentially other chemical warfare agents is possible with simple-to-fabricate carbon nanotube devices.

Homogeneous Linewidths in the Optical Spectrum of a Single Gallium Arsenide Quantum Dot

The homogeneous linewidths in the photoluminescence excitation spectrum of a single, naturally formed gallium arsenide (GaAs) quantum dot have been measured with high spatial and spectral resolution. The energies and linewidths of the homogeneous spectrum provide a new perspective on the dephasing dynamics of the exciton in a quantum-confined, solid-state system. The origins of the linewidths are discussed in terms of the dynamics of the exciton in zero dimensions, in particular, in terms of lifetime broadening through the emission or absorption of phonons and photons.

Fabrication of Si nanostructures with an atomic force microscope

A method for fabricating Si nanostructures with an air‐operated atomic force microscope (AFM) is presented. An electrically conducting AFM tip is used to oxidize regions of size 10–30 nm of a H‐passivated Si (100) surface at write speeds up to 1 mm/s. This oxide serves as an effective mask for pattern transfer into the substrate by selective liquid etching. The initial oxide growth rate depends exponentially on the applied voltage which produces an effective ‘‘tip sharpening’’ that allows small features to be produced by a relatively large diameter tip.

High-mobility Carbon-nanotube Thin-film Transistors on a Polymeric Substrate

We report the development of high-mobility carbon-nanotube thin-film transistors fabricated on a polymeric substrate. The active semiconducting channel in the devices is composed of a random two-dimensional network of single-walled carbon nanotubes (SWNTs). The devices exhibit a field-effect mobility of 150cm2∕Vs and a normalized transconductance of 0.5mS∕mm. The ratio of on-current (Ion) to off-current (Ioff) is ∼100 and is limited by metallic SWNTs in the network. With electronic purification of the SWNTs and improved gate capacitance we project that the transconductance can be increased to ∼10–100mS∕mm with a significantly higher value of Ion∕Ioff, thus approaching crystalline semiconductor-like performance on polymeric substrates.

Fabrication of nanometer‐scale side‐gated silicon field effect transistors with an atomic force microscope

The fabrication of nanometer‐scale side‐gated silicon field effect transistors using an atomic force microscope is reported. The probe tip was used to define nanometer‐scale source, gate, and drain patterns by the local anodic oxidation of a passivated silicon (100) surface. These thin oxide patterns were used as etch masks for selective etching of the silicon to form the finished devices. Devices with critical features as small as 30 nm have been fabricated with this technique.

Single‐atom point contact devices fabricated with an atomic force microscope

The fabrication of atomic point contacts by using anodic oxidation of thin Al films with an atomic force microscope is reported. In situ electrical measurements were used as feedback to control the fabrication of Al nanowires that were subsequently anodized through their cross section to form point contacts. When the conductance of a point contact is reduced below ∼5×10−4 S it starts to decrease in discrete steps of ∼2e2/h. In some devices we are able to stabilize the conductance at a value near 2e2/h which corresponds to a single, atomic‐sized conducting channel.

Fabrication of silicon nanostructures with a scanning tunneling microscope

A technique is presented for fabricating Si nanostructures with a scanning tunneling microscope operated in air. The process involves the direct chemical modification of a H‐passivated Si(100) surface and a subsequent liquid etch. The chemically modified portions of the surface can withstand a deep (≳100 nm) liquid etch of the unmodified regions with no etch degradation of the modified surface. At a write speed of 1–10 μm/s, large‐area (50 μm×50 μm) patterns with lateral feature sizes ∼25 nm are reliably fabricated.