E.W. Lin

Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology

A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC dielectric resonator oscillator (DRO) in conjunction with a GaAs-based high electron mobility transistor (HEMT) MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBT MMICs.

Device considerations and modeling for the design of an InP-based MODFET millimeter-wave resistive mixer with superior conversion efficiency

We report on the device considerations for resistive FET mixer applications and discuss the design and fabrication of an optimized InP-based 0.1 /spl mu/m gate length planar-doped pseudomorphic In/sub 0.42/Al/sub 0.58/As-In/sub 0.65/Ga/sub 0.35/As modulation-doped FET (MODFET) well-suited for resistive mixer applications. In addition, we present a general large-signal model suitable for describing the FET in its passive mode of operation to assist in the design and simulation of such mixers. Finally, we discuss the theoretical design of a novel W-band, image-reject resistive mixer based on a large-signal model of our optimized device. The predicted performance of the mixer under +8 dBm of LO drive indicates a minimum conversion loss of 9 dB at 94 GHz, a significant improvement of over 3 dB in comparison to similar GaAs-based mixers, suggesting the potential of InP-based resistive mixer technology to achieve superior conversion loss performance. >

A W-band monolithic, singly balanced resistive mixer with low conversion loss

We report the design, measured and simulated performance of a novel W-band monolithic, singly balanced resistive FET mixer utilizing 0.1-/spl mu/m pseudomorphic AlGaAs/InGaAs on GaAs HEMT technology. At an LO drive of +8 dBm, this mixer has exhibited a minimum measured conversion loss of 12.8 dB, nearly a 10 dB improvement over previously reported data in this frequency range. Furthermore, the mixer figure of merit, defined as P/sub 1-dB,in/-P/sub LO/, is at least +2 dBm, which is nominally 6 dBm better than that of comparable diode mixers at W-band. These results indicate the excellent potential of this mixer for integration with other circuit components in fully monolithic subsystems.<<ETX>>

A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier

We have developed W-band high-power monolithic microwave integrated circuit (MMIC) amplifiers using passivated 0.15 μm gate length InGaAs/InAlAs/InP HEMTs. A 640 μm single-stage MMIC amplifier demonstrated an output power of 130 mW with 13% power-added efficiency and 4 dB associated gain at 94 GHz. This result represents the best output power to date measured from a single fixtured InP-based HEMT MMIC at this frequency.

Large scale W-band focal plane array for passive radiometric imaging

This paper discusses the development of a large scale W-band focal plane array (FPA) for passive radiometric imaging application. The goal is to develop a 40/spl times/26 (1040-pixels) FPA to cover 15/spl deg//spl times/10/spl deg/ instantaneous field-of-view. Each receiver consists of a single direct detection MMIC which is a W-band high gain, wide bandwidth switched LNA with integrated Schottky barrier diode detector. A 1/spl times/4 FPA module, employing linearly tapered slot antenna, is used as the basic building block for the FPA. Typical receiver temperature sensitivity is 0.4 K with 10 ms integration time. For the first time, an automated assembly process is used to produce W-band MMIC modules in large volume.

A 94 GHz monolithic high output power amplifier

A two-stage monolithic W-band power amplifier using 0.1-/spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs T-gate power HEMT process has been designed, fabricated, and tested. This MMIC PA exhibits 8 dB linear gain and a maximum output power of 300 mW with 10.5% peak power-added efficiency at 94 GHz. The substrate thickness is 2 mil to take advantage of lower thermal resistance as well as smaller via holes and a more compact chip layout. To our knowledge, the 300-mW output power represents the highest output power for a single W-band power amplifier chip at this frequency.

A high-efficiency 94-GHz 0.15-/spl mu/m InGaAs/InAlAs/InP monolithic power HEMT amplifier

We report high efficiency W-band power monolithic microwave integrated circuits (MMICs) using passivated 0.15 /spl mu/m gate length In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP HEMTs. A 0.15 /spl mu/m/spl times/320 /spl mu/m single stage InP power HEMT MMIC amplifier demonstrates a maximum power added efficiency of 23% with 40 mW output power and 4.9 dB power gain at 94 GHz. When biased for higher output power, 54 mW output power with 20% power added efficiency was achieved at 94 GHz. These results represent the best combination of efficiency and output power fixtured data reported to date at this frequency.

A single-chip W-band transceiver with front-end switching receiver for FMCW radar applications

We have demonstrated the first monolithic W-band transceiver with front-end switching receiver for FMCW radar application. The switching receiver utilizes a novel balanced switching low noise amplifier for switching function and has achieved a conversion gain of 5.4 dB and 10 dB isolation. By operating the MMIC as a heterodyne receiver, we achieved a noise figure at 1 MHz IF of 8 dB which is lower than that of the previous reported single-chip W-band homodyne transceivers.<<ETX>>

Monolithic millimeter-wave Schottky-diode-based frequency converters with low drive requirements using an InP HBT-compatible process

This paper describes the successful development of monolithic millimeter-wave frequency converter circuits using an InP HBT-compatible Schottky-diode process. A 94 GHz singly-balanced mixer and a 47-to-94 GHz passive doubler have been fabricated and tested, and both designs have attained admirable conversion loss with low input drive requirements. The mixer has also demonstrated significant improvement in noise figure at low intermediate frequencies compared to a GaAs HEMT diode mixer. At an IF of 1 MHz, the InP HBT diode mixer achieved a DSB noise figure of 16 dB, which is a 17 dB improvement compared to the GaAs HEMT diode mixer.

An advanced single-chip Ka-band transceiver

This paper describes the development of an advanced single-chip Ka-band transceiver for military applications. The in-fixture measured performance of the transceiver chip is presented. The transceiver chip monolithically integrates seven separate chips and one filter onto a single chip. In-fixture, the monolithic transceiver chip has demonstrated measured receiver noise figure of less than 6.5 dB across the RF band from 38.0-38.5 GHz at an IF of 2.45 GHz under -10 dBm LO drive. The transmitter output power was measured to be greater than 17.5 dBm across the 38.0-38.5 GHz band.