Eiichi Hase

Intelligent RF power module using automatic bias control (ABC) system for PCS CDMA applications

Intelligent RF Power Module accommodates advanced PHEMT (Pseudomorphic HEMT) die and a Automatic Bias Control (ABC) system Si die on a small ceramic substrate. This 3.5 V RF Power Module has been designed for use in PCS CDMA applications. At PCS frequency of 1880 MHz, the module attained 35% PAE at Po=28 dBm.

100 GHz optical-to-radio converter module and its application in radio and power over fiber transmission through multi-core fiber

We developed a 100 GHz optical-to-radio converter module integrated with a 100 GHz amplifier, which was applied in radio (12-Gbps, OFDM, 16-QAM, IF = 92-GHz) and power over fiber transmission through a multi-core fiber.

100-GHz integrated photoreceiver using optical-to-radio converter and enhancement mode PHEMT amplifier driven by photonic power supply

We present a 100-GHz integrated photoreceiver using an optical-to-radio converter and an enhancement-mode PHEMT amplifier driven by all optical resources without an external electric power supply. Technology for the simultaneous generation of radio and power was developed using a zero-bias operational uni-travelling carrier (UTC) high-speed photodetector. To improve the optical-to-electrical conversion efficiency, a 110-GHz enhancement-mode InP-PHEMT amplifier was also newly developed, which operates using an internal electric power supply in an optical-to-radio converter. Using a hybrid integration based on all optical resources, a +5.5 dBm RF output at 97 GHz was successfully achieved through the optical-to-radio conversion process. Herein, the two key devices and the integrated photoreceiver are discussed.

A GaAs MMIC chip set for 1.9 GHz Japanese personal handy phone system

The GaAs MMIC chip set consisting of SPDT switch, low noise amplifier, power amplifier, AGC amplifier, up-converter and down converter has been developed to meet the specifications for a 1.9 GHz PHS front-end. The low noise amplifier and power amplifier achieve a noise figure of 2.2 dB and a power added efficiency of 30%, respectively. The SPDT switch employs a new circuit configuration with feedback capacitors, and achieved an output power at the 1dB compression point of 30 dBm. The up-converter employs single mixer, which suppresses local signal leakage to 29 dBc. The down-converter employs a single mixer using dual gate FET, to reduced DC power dissipation.