El Mostafa Bourim

Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction’s depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

Electron emission behaviors of ferroelectric materials

In this work electron emission generated by polarization switching of ferroelectrics has been investigated. In this work special measurement techniques were used to study the electron emission behaviors. Electron-beam resist coated wafers were used to obtain spatial distribution of the emitted electrons. Triglycine sulphate crystals was studied by varying experimental conditions and heat treatment conditions of the samples. Surface flashover plasma of a ferroelectric origin was observed on a polar ferroelectric surface. In our work plasma formation is proved by correlation between the main switching parameters and emission of electrons from ferroelectrics-coercive field and threshold field of emission.