Emilio Ghio

Metal etcher characterisation using flash memory cell as charging sensor

Abstract Fully processed Flash Memory cells have been used to characterise wafer charging damage in a Transformed Coupled Plasma production metal etcher. Wafers both bare and coated with photoresist were exposed to the plasma, and the actual process conditions were simulated by an Ar-reference discharge. Charging effects due to process parameter changes were evaluated, revealing a strong dependence on RF source configurations. The new methodology was demonstrated to be suitable for process control and production monitoring.