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Dive into the research topics where Emmanuel Bergeret is active.

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Featured researches published by Emmanuel Bergeret.


IEEE Transactions on Electron Devices | 2011

High-Gain Fully Printed Organic Complementary Circuits on Flexible Plastic Foils

Mathieu Guerin; Anis Daami; S Stephanie Jacob; Emmanuel Bergeret; Evangéline Bènevent; Philippe Pannier; Romain Coppard

We present several fully printed organic complementary circuits using n- and p-type organic thin-film transistors. n-Type and p-type devices are developed on a flexible polyethylene-naphthalate substrate. All organic layers are deposited using a low-cost screen-printing technique. The inverters show a high gain and a switching point at exactly VDD/2. A seven-stage voltage-controlled oscillator (VCO) is designed with an organic output buffer, using the n- and p-type organic transistors. This VCO oscillates at a frequency of 186 Hz. Finally, two complementary differential amplifiers with high gain and large bandwidth are presented. The amplifiers only draw a 1-μA current from a 40-V power supply.


international conference on electronics, circuits, and systems | 2010

Simulation of intrinsic bipolar transistor mechanisms for future capacitor-less eDRAM on bulk substrate

Remi Pulicani; Olivier Goducheau; Hubert Degoirat; Hassen Aziza; Annie Pérez; Emmanuel Bergeret

Embedded DRAM technology is undergoing a radical evolution. With size reduction, capacity shrink seems to be a complex obstacle to overcome. Alternative memory cells have been proposed to respond to this problem; capacitorless eDRAM is one of most promising solution. In this paper, after reviewing the current status on eDRAM market and recent evolution of eDRAM trends we study the feasibility of an innovative capacitorless eDRAM based on intrinsic bipolar transistor on bulk substrate.


european microwave conference | 2008

Dual Band UHF and Microwave RFID Antenna

Thibaut Deleruyelle; Philippe Pannier; Emmanuel Bergeret; S. Bourdel

This paper presents a new topology for RFID antenna matched on all UHF and one of the microwave RFIDs band. The antenna can be implemented on different standards of tags sizes as credit card, 85 times 54 mm, or other common sizes 50 times 50 mm. The most criticals parameters of the antenna are studied in order to predict design rules for implemented different kind of dies on the antenna. Radiation pattern on UHF band is complementary to the radiation pattern on microwave band. The substrate is FR4, 0.8 mm, with epsivr = 4.4. Some purposes are made on future studied of a tri-band antenna on 13.56 MHz, all UHF and 2.45 GHz RFIDs band.


international semiconductor device research symposium | 2011

A novel Dual-Control-Gate Floating Gate Transistor used in VCO application

A. Marzaki; V. Bidal; R. Laffont; W. Rahajandraibe; J.-M. Portal; Emmanuel Bergeret; R. Bouchakour

A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This block is intended to provide a new vision of design and develop new functionalities. This device is developed to be fully compliant with Non Volatile Memory (NVM) process [1]. DCG-FGT device has been successfully implemented on a 0.13μm embedded NVM CMOS technology. The DCG-FGT is shown in Fig. 1. A first layer of poly-silicon forms the floating gate above the bulk while a second poly-silicon layer is used to implement two adjacent control gates namely (G1) and (G2).


IEEE Antennas and Wireless Propagation Letters | 2011

Influence of Multiantenna Tag on the Read Range of a Passive UHF RFID System

Gary Seigneuret; Emmanuel Bergeret; Christophe Moreaux; Thibaut Deleruyelle; Philippe Pannier

This letter aims to study a multiantenna tag on a UHF RFID system. Impact of dual antenna on the read range is demonstrated. This letter shows that this enhancement is not only due to a better antenna gain, but also to the design of the backscattering system. Indeed, the backscattering modulator is connected on only one of the two inputs of the antenna. Measurements of prototypes designed in 0.18 CMOS process demonstrate that a tag with such a system stays visible for the reader around 2 m better than a one-antenna system.


international conference on advanced semiconductor devices and microsystems | 2014

Temperature sensor on flexible substrate patterned by laser ablation

Mariam Dème Dankoco; Evangéline Bènevent; Emmanuel Bergeret; Laurent Gallais; Marc Bendahan

This paper presents fabrication and characterization of flexible temperature sensor patterned by laser ablation. This work covers the preliminary study on the resistive temperature devices (RTDs) reference sensors used to measure the temperature of human body for health applications. The sensors are composed of different materials like platinum (Pt), copper (Cu) and silver (Ag) as sensitive materials. These different sensitive materials have been deposed on flexible substrate (Kapton®) by radiofrequency (RF) magnetron sputtering process and patterned by laser ablation using a femtosecond laser. The performance of the temperature sensors is evaluated and compared.


international conference on electronics, circuits, and systems | 2016

Power optimized reading procedure for RFID (EPC Gen 2) data transmission enabled application: Example of a wireless temperature sensor

Mathieu Coumba Faye; Emmanuel Bergeret; Jean Gaubert; Philippe Pannier; Damien Jausseran; Christophe Moreaux

The goal of this paper is to present a scenario that optimizes a passive RFID data transmission without changing its standard. This procedure is based on the inventory process defined by the EPC Gen 2 protocol. An application of this procedure will be presented through a wireless temperature sensor concept and an ASIC implementation.


international conference on electronics, circuits, and systems | 2008

A novel design methodology for current reference circuits

Hassen Aziza; Emmanuel Bergeret; Annie Pérez

In this paper, design parameters of a current reference circuit are automatically generated according to specific design constraints. These constraints can be minimal consumption current or minimal temperature coefficients. This methodology is based on a current reference mathematical model. This model is generated thanks to a dasiaDesign Of Experimentpsila (DOE) technique. The DOE technique takes as input electrical simulation results of a current reference circuit for different component geometries. DOE generates polynomial equations of the current reference output IREF, the consumption current ISUNK, the temperature dependency factor betaT and the supply voltage dependency factor betaV. Using these equations and according to a given design specification (IREF, ISUNK, betaT or betaV), the most suitable design parameter values are generated.


Applied Physics A | 2014

Ultrafast laser ablation of metal films on flexible substrates

Laurent Gallais; Emmanuel Bergeret; Bin Wang; Mathieu Guerin; Evangéline Bènevent


IEEE Transactions on Electron Devices | 2013

Organic Complementary Logic Circuits and Volatile Memories Integrated on Plastic Foils

Mathieu Guerin; Emmanuel Bergeret; Evanégline Bènevent; Anis Daami; Philippe Pannier; Romain Coppard

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Philippe Pannier

Centre national de la recherche scientifique

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Hassen Aziza

Aix-Marseille University

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Annie Pérez

Aix-Marseille University

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Mathieu Guerin

Aix-Marseille University

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Thibaut Deleruyelle

Centre national de la recherche scientifique

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Jean Gaubert

Aix-Marseille University

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