Epam Erik Bakkers

Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices

Majoranas Arrive When a negatively charged electron meets a positron—its positively charged antiparticle—they annihilate each other in a flash of gamma rays. A Majorana fermion, on the other hand, is a neutral particle, which is its own antiparticle. No sightings of a Majorana have been reported in the elementary particle world, but recently they have been proposed to exist in solid-state systems and suggested to be of interest as a quantum computing platform. Mourik et al. (p. 1003, published online 12 April; see the cover; see the Perspective by Brouwer) set up a semiconductor nanowire contacted on each end by a normal and a superconducting electrode that revealed evidence of Majorana fermions. Theoretically predicted particles that double as their own antiparticles emerge in a superconductor-coupled indium antimonide nanowire. Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. Here, we report electrical measurements on indium antimonide nanowires contacted with one normal (gold) and one superconducting (niobium titanium nitride) electrode. Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields on the order of 100 millitesla, we observe bound, midgap states at zero bias voltage. These bound states remain fixed to zero bias, even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.

Spin-orbit qubit in a semiconductor nanowire

Motion of electrons can influence their spins through a fundamental effect called spin–orbit interaction. This interaction provides a way to control spins electrically and thus lies at the foundation of spintronics. Even at the level of single electrons, the spin–orbit interaction has proven promising for coherent spin rotations. Here we implement a spin–orbit quantum bit (qubit) in an indium arsenide nanowire, where the spin–orbit interaction is so strong that spin and motion can no longer be separated. In this regime, we realize fast qubit rotations and universal single-qubit control using only electric fields; the qubits are hosted in single-electron quantum dots that are individually addressable. We enhance coherence by dynamically decoupling the qubits from the environment. Nanowires offer various advantages for quantum computing: they can serve as one-dimensional templates for scalable qubit registers, and it is possible to vary the material even during wire growth. Such flexibility can be used to design wires with suppressed decoherence and to push semiconductor qubit fidelities towards error correction levels. Furthermore, electrical dots can be integrated with optical dots in p–n junction nanowires. The coherence times achieved here are sufficient for the conversion of an electronic qubit into a photon, which can serve as a flying qubit for long-distance quantum communication.

Direct Band Gap Wurtzite Gallium Phosphide Nanowires

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555–690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality.

Single-electron tunneling in InP nanowires

We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ? 10?k?, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 ?m. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ? 1?meV. We also demonstrate energy quantization resulting from the confinement in the wire.

Surface passivated InAs/InP core/shell nanowires

We report the growth and characterization of InAs nanowires capped with a 0.5–1 nm epitaxial InP shell. The low-temperature field-effect mobility is increased by a factor 2–5 compared to bare InAs nanowires. We extract the highest low-temperature peak electron mobilities obtained for nanowires to this date, exceeding 20 000 cm2 V s?1. The electron density in the nanowires, determined at zero gate voltage, is reduced by an order of magnitude compared to uncapped InAs nanowires. For smaller diameter nanowires we find an increase in electron density, which can be related to the presence of an accumulation layer at the InAs/InP interface. However, compared to the surface accumulation layer in uncapped InAs, this electron density is much reduced. We suggest that the increase in the observed field-effect mobility can be attributed to an increase of conduction through the inner part of the nanowire and a reduction of the contribution of electrons from the low-mobility accumulation layer. Furthermore the shell around the InAs reduces the surface roughness scattering and ionized impurity scattering in the nanowire.

Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning

We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p-n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 10(7) is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm(2), and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.

Photoelectrochemical Hydrogen Production on InP Nanowire Arrays with Molybdenum Sulfide Electrocatalysts

Semiconductor nanowire arrays are expected to be advantageous for photoelectrochemical energy conversion due to their reduced materials consumption. In addition, with the nanowire geometry the length scales for light absorption and carrier separation are decoupled, which should suppress bulk recombination. Here, we use vertically aligned p-type InP nanowire arrays, coated with noble-metal-free MoS3 nanoparticles, as the cathode for photoelectrochemical hydrogen production from water. We demonstrate a photocathode efficiency of 6.4% under Air Mass 1.5G illumination with only 3% of the surface area covered by nanowires.

Reversible switching of InP nanowire growth direction by catalyst engineering

We demonstrate high yield vapor-liquid-solid (VLS) growth of [100]-oriented InP nanowire arrays. The highest yield (97%) is obtained when the catalyst droplet is filled with indium prior to nanowire nucleation to the equilibrium composition during nanowire growth. Using these [100] wires as a template we can reversibly switch between a [100] and a [111] growth direction by varying the indium content of the droplet. Modeling VLS growth by a kinetic nucleation model indicates that the growth direction is governed by the liquid-vapor interface energy that is strongly affected by the indium concentration in the catalyst droplet.

High optical quality single crystal phase wurtzite and zincblende InP nanowires

We report single crystal phase and non-tapered wurtzite (WZ) and zincblende twinning superlattice (ZB TSL) InP nanowires (NWs). The NWs are grown in a metalorganic vapor phase epitaxy (MOVPE) reactor using the vapor-liquid-solid (VLS) mechanism and in situ etching with HCl at a high growth temperature. Our stacking fault-free WZ and ZB TSL NWs allow access to the fundamental properties of both NW crystal structures, whose optical and electronic behaviors are often screened by polytypism or incorporated impurities. The WZ NWs show no acceptor-related emission, implying that the VLS-grown NW is almost free of impurities due to sidewall removal by HCl. They only emit light at the free exciton (1.491 eV) and the donor bound exciton transition (1.4855 eV). The ZB NWs exhibit a photoluminescence spectrum being unaffected by the twinning planes. Surprisingly, the acceptor-related emission in the ZB NWs can be almost completely removed by etching away the impurity-contaminated sidewall grown via a vapor-solid mechanism.

Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this paper, we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. We also discuss the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation.