Eric A. Joseph

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

The etching of Si, SiO2, Si3N4, and SiCH in fluorocarbon plasmas is accompanied by the formation of a thin steady-state fluorocarbon film at the substrate surface. The thickness of this film and the substrate etch rate have often been related. In the present work, this film has been characterized for a wide range of processing conditions in a high-density plasma reactor. It was found that the thickness of this fluorocarbon film is not necessarily the main parameter controlling the substrate etch rate. When varying the self-bias voltage, for example, we found a weak correlation between the etch rate of the substrate and the fluorocarbon film thickness. Instead, for a wide range of processing conditions, it was found that ion-induced defluorination of the fluorocarbon film plays a major role in the etching process. We therefore suggest that the fluorocarbon film can be an important source of fluorine and is not necessarily an etch-inhibiting film.

Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

Directed self-assembly (DSA) of lamellar phase block-co-polymers (BCPs) can be used to form nanoscale line-space patterns. However, exploiting the potential of this process for circuit relevant patterning continues to be a major challenge. In this work, we propose a way to impart two-dimensional pattern information in graphoepitaxy-based lamellar phase DSA processes by utilizing the interactions of the BCP with the template pattern. The image formation mechanism is explained through the use of Monte Carlo simulations. Circuit patterns consisting of the active region of Si FinFET transistors, referred to as Si fins, were fabricated to demonstrate the applicability of this technique to the formation of complex patterns. The quality of the Si fin features produced by this process was validated by demonstrating the first functional DSA-patterned FinFET devices with 29 nm-pitch fins.

Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar+ ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C4F8 injection. The C4F8 and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.

Etching of xerogel in high-density fluorocarbon plasmas

The etching of various xerogel films has been studied in high-density fluorocarbon plasmas. The xerogel etch rate is in part enhanced by the porosity. In discharges resulting in low surface polymerization, such as CF4 or oxygen-rich fluorocarbon plasmas, an additional enhancement up to 60% is observed. When the polymerization of the discharge is increased, this additional enhancement disappears and the xerogel etch rate becomes more suppressed. The suppression is more pronounced for xerogel films with a higher porosity and a larger pore size. X-ray photoelectron spectroscopy analysis on partially etched samples shows that the suppression in etch rate is accompanied by an increasing amount of fluorocarbon material at the xerogel surface, especially in the pores of the xerogel structure. Finally, a 30% porous xerogel film was patterned using CHF3 as an etching gas. Slight bowing of the sidewalls was observed.

Modified gaseous electronics conference reference cell for the study of plasma-surface-gas interactions

The inductively coupled plasma (ICP) gaseous electronics conference (GEC) reference cell provides a standard system for the study of plasma sciences. In this article, we present a version of the ICP GEC cell that has been designed to allow studies of the interactions between a plasma, gas-phase chemistry, and surface-phase chemistry. Specifically, this modified GEC reference cell has specially designed interior walls that can be heated/cooled (10 to 200u200a°C) and moved. In addition, these walls can be coated with various materials (Al2O3, SiO2, Si, etc.). Design specifications and initial results are presented. These initial results provide an indication of the flexibility of this modified tool and the types of experiments that it should allow.

Effect of surface temperature on plasma-surface interactions in an inductively coupled modified gaseous electronics conference reactor

The effect of wall temperature, from 50to200°C, on gas phase chemistry and substrate etching rates has been studied in inductively coupled CF4 plasma under two distinctive initial wall conditions, namely “clean” and “seasoned.” During plasma etching, we found that the gas phase chemistry exhibits a weak dependence on the initial wall cleanliness when the wall is either cold (50°C) or hot (200°C). In the mid-temperature range, the wall cleanliness can strongly affect gas phase chemistry. The study of temperature dependence of the fluorocarbon film deposition on the substrate indicates that ion-assisted incorporation, direct ion incorporation and ion-assisted desorption are the major factors determining film growth and removal. Ion-assisted incorporation and desorption are surface-temperature-dependent, while direct ion incorporation is independent of the surface temperature.

Spectroscopic study of gas and surface phase chemistries of CF4 plasmas in an inductively coupled modified gaseous electronics conference reactor

Gas and surface phase chemistries of CF4 plasma were studied in an inductively coupled modified gaseous electronics conference reference cell, using in situ Fourier transform infrared spectroscopy enhanced by a multipass White cell and in situ spectroscopic ellipsometry. The self-bias dc voltage, densities of gaseous species, fluorocarbon film thickness on Si substrate, as well as etch rates of SiO2 and Si were measured during plasma processing as functions of the pressure, CF4 gas flow rate, rf source power, platen bias power, and source-platen gap. The gaseous molecules and radicals monitored included CF4, CF3, CF2, SiF4, and COF2, among which CF4 and SiF4 were found to be the two dominant species, combining for about 80% of the total concentration. The density ratio of SiF4 and COF2 was about 2:1 with no bias on the substrate and increased up to ∼8:1 when Si substrate etching took place. Specifically, as the Si etch rate increased, the COF2 density dropped, likely due to suppressed etching of the quart...

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2 [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30u2009eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.

Investigation and modeling of plasma-wall interactions in inductively coupled fluorocarbon plasmas

Plasma-wall interactions in fluorocarbon based feedgas chemistries, namely CF4, are examined in a standard inductively coupled Gaseous Electronics Conference reference cell using in situ Fourier-transform infrared spectroscopy and microwave interferometry. Measurements show the dissociation of the CF4 feedgas into radical CFx species, as has been observed elsewhere [M. J. Goeckner and R. A. Breun, J. Vac. Sci. Technol. A 11, 3 (1993)], and qualitatively reveal a decrease in plasma-wall interactions as wall temperature is increased. Experimental results such as plasma density, 1011u200acm−3, and CF4 density 1013u200acm−3, are further compared to results from the hybrid plasma equipment model [R. Kinder and M. J. Kushner, J. Vac. Sci. Technol. A 19, 76 (2001)] to better elucidate the influence of wall temperature on plasma exposed surfaces and sticking coefficients. Last, CF4 vibrational temperatures were also measured, revealing that the line-averaged vibrational temperature remains at a constant 40–60 K above the chamber wall temperature while the vibrational temperature in the center of the discharge is significantly higher. Moreover, the vibrational temperatures are further compared to results from a global thermal model and are in good agreement.Plasma-wall interactions in fluorocarbon based feedgas chemistries, namely CF4, are examined in a standard inductively coupled Gaseous Electronics Conference reference cell using in situ Fourier-transform infrared spectroscopy and microwave interferometry. Measurements show the dissociation of the CF4 feedgas into radical CFx species, as has been observed elsewhere [M. J. Goeckner and R. A. Breun, J. Vac. Sci. Technol. A 11, 3 (1993)], and qualitatively reveal a decrease in plasma-wall interactions as wall temperature is increased. Experimental results such as plasma density, 1011u200acm−3, and CF4 density 1013u200acm−3, are further compared to results from the hybrid plasma equipment model [R. Kinder and M. J. Kushner, J. Vac. Sci. Technol. A 19, 76 (2001)] to better elucidate the influence of wall temperature on plasma exposed surfaces and sticking coefficients. Last, CF4 vibrational temperatures were also measured, revealing that the line-averaged vibrational temperature remains at a constant 40–60 K above the...

Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources

The ability to achieve atomic layer precision is the utmost goal in the implementation of atomic layer etch technology. Carbon-based materials such as carbon nanotubes (CNTs) and graphene are single atomic layers of carbon with unique properties and, as such, represent the ultimate candidates to study the ability to process with atomic layer precision and assess impact of plasma damage to atomic layer materials. In this work, the authors use these materials to evaluate the atomic layer processing capabilities of electron beam generated plasmas. First, the authors evaluate damage to semiconducting CNTs when exposed to beam-generated plasmas and compare these results against the results using typical plasma used in semiconductor processing. The authors find that the beam generated plasma resulted in significantly lower current degradation in comparison to typical plasmas. Next, the authors evaluated the use of electron beam generated plasmas to process graphene-based devices by functionalizing graphene with...