Eric Louis
MESA+ Institute for Nanotechnology
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Featured researches published by Eric Louis.
Microelectronic Engineering | 1994
Eric Louis; H.-J. Voorma; N.B. Koster; L. A. Shmaenok; F. Bijkerk; R. Schlatmann; Jan W. Verhoeven; Yu.Ya. Platonov; G.E. van Dorssen; Howard A. Padmore
Abstract In this paper we discuss two techniques to optimize the quality of multilayer x-ray mirrors, namely optimization of the temperature of the substrates during deposition and ion-bombardment of the layers. We produced Mo/Si multilayers applying both methods and present the effect on the near normal incidence reflectivity for λ = 13–14 nm radiation. Furthermore an analysis of the homogeneity of the deposited layers is given.
Journal of Applied Physics | 1997
Harm-Jan Voorma; Eric Louis; Fred Bijkerk; Salim Abdali
The process of ion bombardment is investigated for the fabrication of Mo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layers to smoothen the layers by removing an additional thickness of the Si layer. In this study the parameters of Kr+ ion bombardment have been optimized within the energy range 300 eV–2 keV and an angular range between 20° and 50°. The optical performance of the Mo/Si multilayers is determined by absolute measurements of the near-normal-incidence reflectivity at 14.4 nm wavelength. The multilayer structures are analyzed further with small-angle reflectivity measurements using both specular reflectivity and diffuse x-ray scattering. The optimal smoothening parameters are obtained by determining the effect of ion bombardment on the interface roughness of the Si layer. The optimal conditions are found to be 2 keV at 50° angle of incidence with respect to the surface. These settings result in 47% reflectivit...
Optics Express | 2012
Igor Alexandrovich Makhotkin; E. Zoethout; Eric Louis; Andrei Mikhailovich Yakunin; S. Muellender; Frederik Bijkerk
The spectral properties of La/B, La/B(4)C, and LaN/B, LaN/B(4)C multilayer mirrors have been investigated in the 6.5-6.9 nm wavelength range based on measured B and B(4)C optical constants. Experimentally it is verified to what extent measured and tabulated optical constants are applicable for simulations of the reflectivity of these short period multilayer mirrors. The measured maximum reflectance at various wavelength values around the boron-K absorption edge is compared to calculated values from model systems. The measured reflectance profiles of La/B and La/B(4)C show a maximum at a slightly larger wavelength than calculations would predict based on the measured B and B(4)C optical constants. This is explained by the influence of a formed boron-lanthanum compound on the wavelength where the multilayer shows maximum reflectance. The maximum reflectance profiles of LaN/B and LaN/B(4)C multilayers can be described accurately by using the same boron atomic scattering factors, indicating boron in the LaN/B(4)C multilayer to be in a similar chemical state as boron in the LaN/B multilayer. It also indicates that nitridation of the La layer in the multilayer prevents the formation of La-B compounds. We show that the optimal wavelength for boron based optics is about 6.65 nm and depends on the B chemical state. Finally, using the measured B optical constants we are able to calculate the spectral response of the multilayers, enabling the prediction of the optimal parameters for the above mentioned multilayers.
Journal of X-ray Science and Technology | 1992
Fred Bijkerk; Eric Louis; Marnix J. van der Wiel; Edmond Turcu; G.J. Tallents; D. Batani
In order to develop a high-intensity laser plasma x-ray source appropriate for industrial application of x-ray lithography, experiments have been carried out using a high-repetition-rate (up to 40 Hz) excimer laser (249 nm, 300 mJ) with a power density of 2 × 1013 W/ cm2 in the laser focus. In this study emphasis is given to remedying specific problems inherent in operating the laser plasma x-ray source at high repetition rates and in its prolonged operation. Two different methods of minimizing the production of target debris are investigated. First, the use of helium as a quenching gas results in a reduction of the amount of atomic debris particles by more than two orders of magnitude with negligible x-ray absorption. Second, a tape target as opposed to a solid target reduces the production of larger debris particles by a further factor of 100. Remaining debris is stopped by an aluminized plastic or beryllium filter used to avoid exposure of the resist by plasma ultraviolet radiation. The x-ray source has been used to image x-ray transmission mask structures down to 0.3 μm onto general purpose x-ray photo-resist. Results have been analyzed with SEM. The x-ray emission spectrum of the repetitive laser plasmas created from an iron target has been recorded and the conversion efficiency of the laser light into x-rays that contribute to exposure of the resist was measured to be 0.3% over 2π sr.
Optics Express | 2013
Igor Alexandrovich Makhotkin; E. Zoethout; Robbert Wilhelmus Elisabeth van de Kruijs; S.N. Yakunin; Eric Louis; Andrei Mikhailovich Yakunin; Vadim Yevgenyevich Banine; Stephan Müllender; Fred Bijkerk
In the first part of this article we experimentally show that contrast between the very thin layers of La and B enables close to theoretical reflectance. The reflectivity at 6.8 nm wavelength was measured from La/B multilayer mirrors with period thicknesses ranging from 3.5 to 7.2 nm at the appropriate angle for constructive interference. The difference between the measured reflectance and the reflectance calculated for a perfect multilayer structure decreases with increasing multilayer period. The reflectance of the multilayer with the largest period approaches the theoretical value, showing that the optical contrast between the very thin layers of these structures allows to experimentally access close to theoretical reflectance. In the second part of the article we discuss the structure of La/B and LaN/B multilayers. This set of multilayers is probed by hard X-rays (λ = 0.154 nm) and EUV radiation (λ = 6.8 nm). The structure is reconstructed based on a simultaneous fit of the grazing incidence hard X-ray reflectivity and the EUV reflectivity curves. The reflectivity analysis of the La/B and LaN/B multilayer mirrors shows that the lower reflectance of La/B mirrors compared to LaN/B mirrors can be explained by the presence of 5% of La atoms in the B layer and 63% of B in La layer. After multi-parametrical optimization of the LaN/B system, including the nitridation of La, the highest near normal incidence reflectivity of 57.3% at 6.6 nm wavelength has been measured from a multilayer mirror, containing 175 bi-layers. This is the highest value reported so far.
Microelectronic Engineering | 2002
Norbert Koster; Rik Jansen; Annemieke van de Runstraat; Frank Stietz; Marco Wedowski; Hans Meiling; Roman Klein; Alexander Gottwald; Frank Scholze; Matthieu Visser; Ralph Kurt; P. C. Zalm; Eric Louis; Andrey Yakshin
Abstract EUVL tools operate under vacuum conditions to avoid absorption losses. Under these conditions, the MoSi multilayer mirrors are contaminated, resulting in reduced reflection and thus throughput. We report on experiments on MoSi mirrors exposed to EUV radiation from a synchrotron. To mimic the effects of EUV radiation we also exposed samples using an electron gun. The oxidation rate was found to be ∼0.016 nm/h per mW/mm 2 of EUV radiation under conditions expected for a high throughput EUVL system. This oxidation can to a large extent be suppressed by using smart gas blend strategies during exposure, e.g. using ethanol. A carbon growth rate of 0.25 nm/h was found for a hydrocarbon pressure of 10 −9 mbar Fomblin. We demonstrate that carbonisation can be suppressed by admitting oxygen during electron gun exposure.
Optics Express | 2011
R. Sobierajski; S. Bruijn; A.R. Khorsand; Eric Louis; Robbert Wilhelmus Elisabeth van de Kruijs; T. Burian; J. Chalupsky; J. Cihelka; Michael Gleeson; J. Grzonka; Eric M. Gullikson; V. Hajkova; Stefan P. Hau-Riege; L. Juha; M. Jurek; D. Klinger; J. Krzywinski; Richard A. London; J.B. Pełka; T. Plocinski; M. Rasinski; Kai Tiedtke; S. Toleikis; L. Vysin; H. Wabnitz; Frederik Bijkerk
We investigated the damage mechanism of MoN/SiN multilayer XUV optics under two extreme conditions: thermal annealing and irradiation with single shot intense XUV pulses from the free-electron laser facility in Hamburg - FLASH. The damage was studied post-mortem by means of X-ray diffraction, interference-polarizing optical microscopy, atomic force microscopy, and scanning transmission electron microscopy. Although the timescale of the damage processes and the damage threshold temperatures were different (in the case of annealing it was the dissociation temperature of Mo2N and in the case of XUV irradiation it was the melting temperature of MoN) the main damage mechanism is very similar: molecular dissociation and the formation of N2, leading to bubbles inside the multilayer structure.
Journal of Vacuum Science & Technology B | 1999
R. Stuik; Eric Louis; A. E. Yakshin; P. C. Görts; E. L. G. Maas; F. Bijkerk; D. Schmitz; F. Scholze; G. Ulm; M. Haidl
Reported is the optimization of the fabrication of Mo/Si multilayer systems produced by e-beam evaporation and ion-beam smoothening. The impact of a number of coating parameters is verified such as variation of the mirror’s center wavelength and the metal fraction of the bilayer (Γ ratio), resulting in reflectivities up to 68.6% at normal incidence. Parallel to this experimental work, a numerical optimization based on experimentally determined multilayer properties is carried out on the throughput of multimirror lithographic systems for the 11–15 nm wavelength region using Mo/Si and Mo/Be coatings. The center wavelength, Γ ratio and layer stack have been optimized. The calculations show an optimum throughput for a 10-mirror Mo/Si system at 14.4 nm, assuming a light source with a wavelength independent spectrum.
Microelectronic Engineering | 1995
Eric Louis; H.-J. Voorma; N.B. Koster; F. Bijkerk; Yu.Ya. Platonov; S.S. Andreev; E. A. Shamov; N. N. Salashchenko
In this paper we present normal incidence reflectivity measurements of EUV reflective multilayer coatings for @l=13-14 nm, the wavelength of interest for EUV projection lithography. The multilayer coatings are produced by e-beam evaporation in combination with ionbombardment of the layers and by magnetron sputtering. These techniques are used for coating the mirrors of our Schwarzschild telescope. We show measurements of absolute EUV reflectivity and homogeneity of the layer thickness over the mirrors. Furthermore we discuss the matching of the centre wavelength of the reflectivity curves for each of the components of our projection system.
Optics Express | 2009
Juequan Chen; Eric Louis; Christopher James Lee; Herbert Wormeester; R. Kunze; Hagen Schmidt; Dieter Schneider; Roel Moors; Willem van Schaik; Monika Lubomska; Fred Bijkerk
In this paper, we detect and characterize the carbon contamination layers that are formed during the illumination of extreme ultraviolet (EUV) multilayer mirrors. The EUV induced carbon layers were characterized ex situ using spectroscopic ellipsometry (SE) and laser generated surface acoustic waves (LG-SAW). We show that both LG-SAW and SE are very sensitive for measuring carbon layers, even in the presence of the highly heterogeneous structure of the multilayer. SE has better overall sensitivity, with a detection limit of 0.2 nm, while LG-SAW has an estimated detection limit of 2 nm. In addition, SE reveals that the optical properties of the EUV induced carbon contamination layer are consistent with the presence of a hydrogenated, polymeric like carbon. On the other hand, LG-SAW reveals that the EUV induced carbon contamination layer has a low Youngs modulus (<100 GPa), which means that the layer is mechanically soft. We compare the limits of detection and quantification of the two techniques and discuss their prospective for monitoring carbon contamination build up on EUV optics.
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Robbert Wilhelmus Elisabeth van de Kruijs
MESA+ Institute for Nanotechnology
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