Fred Bijkerk

Progress in Mo/Si multilayer coating technology for EUVL optics

Extensive optimization on the fabrication of Mo/Si multilayer systems is carried out at the FOM Institute Rijnhuizen using e-beam evaporation. The process is being optimized including parameters such as variation of the mirrors center wavelength, the metal fraction, deposition parameters, and the layer composition. Reflectivities of 69.5% are demonstrated at normal incidence, with values of 67 to 69% being routinely achieved, demonstrating the capabilities of the deposition process. Some evidence of smoothening to interface roughness values lower than the roughness of the initial substrate is given. Furthermore, investigation of the temporal behavior of the coatings does not indicate any loss of reflectivity over an eight-month period. An analysis of the multilayer composition and the interface roughness is given. The reflectivity measurements have been carried out at the PTB facilities at the electron storage rings BESSY I and BESSY II in Berlin. The results of measurements at both facilities are found to be identical and accuracy is discussed in detail.

Performance Optimization of a High-Repetition-Rate KrF Laser Plasma X-Ray Source for Microlithography

In order to develop a high-intensity laser plasma x-ray source appropriate for industrial application of x-ray lithography, experiments have been carried out using a high-repetition-rate (up to 40 Hz) excimer laser (249 nm, 300 mJ) with a power density of 2 × 1013 W/ cm2 in the laser focus. In this study emphasis is given to remedying specific problems inherent in operating the laser plasma x-ray source at high repetition rates and in its prolonged operation. Two different methods of minimizing the production of target debris are investigated. First, the use of helium as a quenching gas results in a reduction of the amount of atomic debris particles by more than two orders of magnitude with negligible x-ray absorption. Second, a tape target as opposed to a solid target reduces the production of larger debris particles by a further factor of 100. Remaining debris is stopped by an aluminized plastic or beryllium filter used to avoid exposure of the resist by plasma ultraviolet radiation. The x-ray source has been used to image x-ray transmission mask structures down to 0.3 μm onto general purpose x-ray photo-resist. Results have been analyzed with SEM. The x-ray emission spectrum of the repetitive laser plasmas created from an iron target has been recorded and the conversion efficiency of the laser light into x-rays that contribute to exposure of the resist was measured to be 0.3% over 2π sr.

Short period La/B and LaN/B multilayer mirrors for ~6.8 nm wavelength.

In the first part of this article we experimentally show that contrast between the very thin layers of La and B enables close to theoretical reflectance. The reflectivity at 6.8 nm wavelength was measured from La/B multilayer mirrors with period thicknesses ranging from 3.5 to 7.2 nm at the appropriate angle for constructive interference. The difference between the measured reflectance and the reflectance calculated for a perfect multilayer structure decreases with increasing multilayer period. The reflectance of the multilayer with the largest period approaches the theoretical value, showing that the optical contrast between the very thin layers of these structures allows to experimentally access close to theoretical reflectance. In the second part of the article we discuss the structure of La/B and LaN/B multilayers. This set of multilayers is probed by hard X-rays (λ = 0.154 nm) and EUV radiation (λ = 6.8 nm). The structure is reconstructed based on a simultaneous fit of the grazing incidence hard X-ray reflectivity and the EUV reflectivity curves. The reflectivity analysis of the La/B and LaN/B multilayer mirrors shows that the lower reflectance of La/B mirrors compared to LaN/B mirrors can be explained by the presence of 5% of La atoms in the B layer and 63% of B in La layer. After multi-parametrical optimization of the LaN/B system, including the nitridation of La, the highest near normal incidence reflectivity of 57.3% at 6.6 nm wavelength has been measured from a multilayer mirror, containing 175 bi-layers. This is the highest value reported so far.

Thermally enhanced interdiffusion in Mo∕Si multilayers

The formation and development of Mo-Si interfaces in Mo∕Si multilayers upon thermal annealing, including a transition to h‐MoSi2, have been investigated using high resolution transmission electron microscopy, x-ray reflectivity, and x-ray diffraction measurements. The silicide layers naturally formed at Mo-Si interfaces, i.e., just upon and after the deposition, are amorphous and have different thicknesses for as-deposited samples, with the Mo-on-Si interlayer being the largest. In addition, silicide growth at Mo-Si interfaces during annealing before the phase transformation predominantly takes place at the Mo-on-Si interface and a MoSi2 interface layer is formed. Diffusion continues until a thick MoSi2 layer is formed at the interface, at which point the interface crystallizes and diffusion speeds up, finally resulting in an abrupt intermixing and phase transition of the entire interface to h‐MoSi2. This model predicts an onset of the phase transition which does not depend primarily on the annealing temp...

Absolute calibration of a multilayer-based XUV diagnostic

Abstract A portable, universal narrowband XUV diagnostic suitable for calibration of various XUV light sources, was built, tested and fully calibrated. The diagnostic allows measurement of the absolute XUV energy and average power in two selected wavelength bands, at 11.4 and 13.4xa0nm. In addition, the pulse-to-pulse and long-term XUV stability of the source can be assessed, as well as the contamination of multilayer XUV optics exposed to the source. This paper describes the full calibration procedure: all optical elements were calibrated at the wavelength of operation by Physikalisch-Technische Bundesanstalt at the storage ring Bessy II, a full analysis of geometrical factors was done, and the influence of the spectral emissivity of the source on the calibration was analyzed in detail. The calibration was performed both for the centroid wavelength as for the full bandwidth of the diagnostic. The total uncertainty in the absolute calibration allowed measurement of source characteristics with an uncertainty of less than 5%, and a shot-to-shot repeatability to less than 2%. The uncertainty was mainly determined by external factors like background gas distribution and spectral source characteristics. Examples of application to a laser plasma and discharge plasma XUV source are given.

Portable diagnostics for EUV light sources

The EUV light source is a critical factor for the success of Extreme Ultraviolet Lithography (EULV), ASML, FOM and Philips Research have developed a portable set of diagnostics for the characterization of candidate EUV sources, called Flying Circus. The set of diagnostics is used to perform the following measurements: Absolute EUV power measurements, pulse-to-pulse intensity fluctuations, plasma size and shape, size/shape/positional stability, spectral distribution of radiation and stability, timing jitter and contamination by the source. These measurements are to be performed on-site, at the laboratories of the different source developers. The design as well as the first calibration measurements performed by the Flying Circus on the FOM Xe double gas jet source and on the PLEX z-pinch source will be discussed.

Microstructure of Mo/Si multilayers with B4C diffusion barrier layers

The growth behavior of B(4)C interlayers deposited at the interfaces of Mo/Si multilayers was investigated using x-ray photoemission spectroscopy, x-ray reflectivity, and x-ray diffraction measurements. We report an asymmetry in the formation of B(4)C at the B(4)C-on-Mo interface compared to the B(4)C-on-Si interface. X-ray photoelectron spectroscopy (XPS) depth profiling shows that for B(4)C-on-Mo the formed stoichiometry is close to expectation (4:1 ratio), while for B(4)C-on-Si it is observed that carbon diffuses from the B(4)C interfaces into the multilayer, resulting in nonstochiometric growth (>4:1). As a result, there is a discrepancy in the optical response near 13.5 nm wavelength, where B(4)C-on-Mo behaves according to model simulations, while B(4)C-on-Si does not. The as-deposited off-stoichiometric B(4)C-on-Si interface also explains why these interfaces show poor barrier properties against temperature induced interdiffusion. We show that the stoichiometry of B(4)C at the Mo-Si interfaces is connected to the structure of the layers onto which B(4)C is grown. Because of enhanced diffusion into the amorphous Si surface, we suggest that deposited boron and carbon atoms form Si(X)B(Y) and Si(X)C(Y) compounds. The low formation enthalpy of Si(X)C(Y) ensures C depletion of any B(X)C(Y) interlayer. Only after a saturated interfacial layer is formed, does further deposition of boron and carbon atoms result in actual B(4)C formation. In contrast to the off-stoichiometric B(4)C growth on top of Si, B(4)C grown on top of Mo retains the correct stoichiometry because of the higher formation enthalpies for Mo(X)B(Y) and Mo(X)C(Y) formation and the limited diffusion depth into the (poly)-crystalline Mo surface.

Multilayer reflectance during exposure to EUV radiation

Mo/S multilayer mirrors have been exposed to intense monochromatic EUV radiation in order to investigate a possible deterioration of the mirror reflectance under different vacuum conditions. Power densities up to 3 mW/mm2 were applied at the PB undulator beamline at BESSY II, applying a hydrocarbon enriched vacuum. The mirror reflectance has been monitored in situ during several hours of exposure. Vacuum pressures of 3 X 10-8 mbar (without hydrocarbons) and 10-7 mbar (with hydrocarbons) at EUV intensities of 3 mW/mm2, respectively 0.2 mW/mm2 have been applied. The reflectance of the mirrors decreased when exposed to EUV radiation in hydrocarbon enriched vacuum, while no loss in reflectance was observed when no hydrocarbons were added to the vacuum. Ozone-cleaning experiments, using UV produced ozone from air at atmospheric pressure, were performed and show that Mo/S mirrors do not suffer from prolonged exposure to ozone.

Detection and characterization of carbon contamination on EUV multilayer mirrors

In this paper, we detect and characterize the carbon contamination layers that are formed during the illumination of extreme ultraviolet (EUV) multilayer mirrors. The EUV induced carbon layers were characterized ex situ using spectroscopic ellipsometry (SE) and laser generated surface acoustic waves (LG-SAW). We show that both LG-SAW and SE are very sensitive for measuring carbon layers, even in the presence of the highly heterogeneous structure of the multilayer. SE has better overall sensitivity, with a detection limit of 0.2 nm, while LG-SAW has an estimated detection limit of 2 nm. In addition, SE reveals that the optical properties of the EUV induced carbon contamination layer are consistent with the presence of a hydrogenated, polymeric like carbon. On the other hand, LG-SAW reveals that the EUV induced carbon contamination layer has a low Youngs modulus (<100 GPa), which means that the layer is mechanically soft. We compare the limits of detection and quantification of the two techniques and discuss their prospective for monitoring carbon contamination build up on EUV optics.

Stress mitigation in Mo/Si multilayers for EUV lithography

Although Mo/Si multilayers are now widely used in EUV lithography development programs, multilayer induced substrate stress continues to be a major issue. Standard stress values of -350 to -450 MPa, reported for Mo/Si systems produced by magnetron sputtering, induce an intolerable deformation of the surface figure of EUV optical components. Stress in e-beam deposited Mo/Si multilayers has not been reported before. At FOM Rijnhuizen, an extensive stress mitigation program has been carried out on multilayers produced by e-beam deposition and medium energy ion polishing. The stress in our standard, high reflectance Mo/Si multilayers is less than -200 MPa. Although e-beam deposition apparently halves the typical stress values obtained by sputter deposition, it is still above the allowable limit for the first lithographic system, the so-called Alpha Tool. To further reduce stress, the influence of the Mo fraction, the number of periods and the multilayer period or d-spacing has been investigated. Varying the Molybdenum fraction in e-beam deposited multilayers results in a similar dependency as reported for magnetron sputtered coatings, though at strongly reduced absolute values. Furthermore, variation of the d-spacing has a small influence on stress. The number of periods however, has no influence on the stress value in the range from 20 to 50 periods. Applying stress mitigation techniques based on adjustment of the Mo fraction, a high reflectance of above 69% at near normal incidence at 13.5 nm has been obtained for multilayers with a stress value of only -33 MPa. This has been achieved by using Mo and Si only. This stress value is sufficiently low to enable the first generations of EUVL optics.