Erik Särhammar

Tribochemically Active Ti–C–S Nanocomposite Coatings

We demonstrate a new concept of self-adaptive materials, where sulphur is incorporated into TiC/a-C coatings and may be released in, for example, a tribological contact. By reactive sputtering with H2S, sulphur goes into the carbide to form a TiC x S y phase in an amorphous carbon matrix. The addition of sulphur lowers the friction against steel. Significantly lower friction is obtained against a tungsten counter-surface, as WS2 is generated in the contact. Annealing experiments and formation energy calculations confirm that sulphur can be released from TiC x S y . Ti–C–S coatings are thus chemically active in tribological contacts, creating possibilities of new low-friction systems.

Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition rate from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.