Ernest Bassous

Fabrication of novel three-dimensional microstructures by the anisotropic etching of

The anisotropic etching of single crystal silicon of

Ink jet printing nozzle arrays etched in silicon

Ink jet printing nozzle arrays in the form of truncated pyramidal holes anisotropically etched into a silicon substrate have been fabricated. Eight‐nozzle arrays dixplay excellent performance characteristics with regard to uniformity of direction (<± 1mra), velocity (<± 10 cm/sec) at 1000–3000 cm/sec), and drop formation.

Silicon charge electrode array for ink jet printing

A monolithic charge electrode array suitable for use in a multiple channel ink jet printing apparatus has been fabricated by anisotropic etching of trapezoidal slots through a

Integrated waveguide-photodetector using Si/SiGe multiple quantum wells for long wavelength applications

An Si/SiGe integrated rib waveguide-photodetector for long wavelength applications has been fabricated. Low-loss (1-2 dB/cm at 1.3 mu m) silicon waveguides on SOI (silicon-on-insulator) have been fabricated. Remote coupling of optical fiber to photodetector through the silicon waveguide was successfully accomplished. The integrated waveguide-P-i-N detectors exhibited low reverse leakage currents (10-30 pA/ mu m/sup 2/ at 15 V reverse bias) and 50% internal quantum efficiency at 1.1 mu m, with a frequency response bandwidth of 1-2 GHz. These results show promise for an integrated preamplifier-detector for an all Si-based long wavelength receiver.<<ETX>>

A high-speed silicon metal-semiconductor-metal photodetector fully integrable with (Bi)CMOS circuits

The authors have fabricated and characterized interdigitated silicon metal-semiconductor-metal photodetectors (MSM-PDs) using a self-aligned PtSi Schottky barrier metallurgy and SiO/sub 2/ passivation in a VLSI-compatible process. These MSM-PDs are optimal for high speed applications at wavelengths <700 nm. The detectors show a classic Si spectral response with a 3 dB cut-off frequency in excess of 1.1 GHz at a wavelength of 630 nm. DC responsivities in excess of 0.3 A/W were measured on devices with a PtSi electrode spacing of 1.6 mu m and a total device area of 6375 mu m/sup 2/ of which 46% was active. The integrated detectors have potential applications in short-wavelength optical interconnects and optical storage systems.<<ETX>>

Deep trench structures in silicon for sensitivity enhancement of Si/SiO2 interface studies

The measurement of defects at the silicon‐insulator interface by most spectroscopic techniques is difficult because of their low concentration. A novel structure has been fabricated by etching a dense array of deep trenches through a silicon wafer. All the sidewalls in this structure are {111} surfaces, and the surface area is greatly enhanced compared to that of a polished wafer of equivalent size. We have grown an oxide on this structure and have achieved better than an order of magnitude increase in the sensitivity of electron paramagnetic resonance measurements of Pb defects at the SiO2‐Si(111) interface.