Eun Jin Jung

A Study on the Synthesis of SiC Powder from the Silicon Sludge of the Photovoltaic Industry

β-SiC powder was synthesized directly from silicon sludge with carbon black. Large amount of silicon sludge is generated from Solar Cell industry. In an environmental and economic point of view, recycling silicon sludge is important. In this study, two kinds of silicon sludge were characterized using XRD, SEM/EDS and FT-IR. SiC powder was synthesized by the reaction of ball-milled silicon powder for 3h in vacuum at different temperatures (1350 and 1600). Physical properties of the heat treated SiC have been characterized using a SEM, XRD, Particle size analyzer and FT-IR Spectroscopy.

The Synthesis of High-Surface Area Silicon Carbide by Conversion Method Using Carbosilane Polymer

Since mesoporous silica such as MCM-41 and SBA-15 was developed, the study of the properties of high-surface area materials was accelerated. Moreover, the mesoporous silica is used as a template to produce high-surface materials by nanocasting technology. The purpose of this paper is the synthesis of a high surface silicon carbide sphere by the nanocasting technology. In this study, KCC-1 silica sphere was used as a template, and polycarbosilane and poly (phenyl carbosilane) were selected for precursor of silicon carbide. Carbosilane polymer gives advantage of synthesis silicon carbide under low temperature, and hollow spheres were produced. In this study, the polycarbosilane was more effective for the synthesis of SiC hollow spheres by inversion of template structure showing a fibrous morphology on the sphere wall. And it was confirmed that the sphere was composed of nanosized SiC crystals, and has high surface area using TEM, XRD and BET analysis.

Preparation and Characterization of High Purity β-SiC Powder

SiC powder can be produced generally through the Acheson process and it is required long carbothermic reaction time of SiO2 with carbon powder around 2200 °C ~ 2400 °C. Due to the high reaction temperature and long reaction time of the process, the powders produced have a large particle size and consist of mostly alpha phase SiC. Synthetic temperature of beta phase SiC powder is known to produce at 1700 °C ~ 1900 °C which is lower temperature than that of alpha phase SiC powder. We prepared β-SiC powder by heating precursor derived from the mixture of phenolic resin and tetraethyl orthosilicate. The precursor was heated at 1800 °C for 4 h in an Ar atmosphere. In order to examine the pyrolysis residue after the heat treatment, the SiC powder was analyzed with XRD and SEM. The X-ray diffraction result of the SiC powder shows the diffraction peaks around 35°, 60°, and 73° corresponded to the beta SiC phase. β-SiC powder prepared in this study contains lower metallic impurities compare than that of α-SiC powder prepared from Acheson method and is able to use as a good starting material for SiC single crystal growing.