Euo Sik Cho

Fabrication of triode diamond field emitter arrays on glass substrate by anisotropic conductive film bonding

Gated pyramid-shaped polycrystalline diamond field emitter arrays (FEAs) were fabricated by microwave plasma chemical vapor deposition and the transfer mold technique. The FEAs were fabricated with various standard integrated circuit technologies and micromachine electromechanical system technologies; thermal oxidation, chemical wet etch, sputtering, and glass-to-metal bonding technique by using anisotropic conductive film (ACF). As a result of ACF bonding, thin flat film type FEAs were simply realized on an indium tin oxide coated glass substrate without the necessity of an additional cathode contact. Fabricated diamond FEAs were electrically characterized in triode configuration and an anode current of 237 nA was obtained at the gate bias of 120 V.

Fabrication and characterization of phosphorus-implanted mold-type diamond field-emitter arrays

Abstract Phosphorus implantation was applied to the fabrication of mold-type diamond field-emitter arrays (FEAs) for the first time. The fabricated diamond FEAs were structurally and electrically investigated and the results were compared with those of flat diamond films under the same implantation conditions. When the diamond films were implanted after they were grown by microwave-plasma chemical vapor deposition (MPCVD), improved field emission characteristics were obtained. From previous work and these electrical results, it is possible to infer that implanted phosphorus ions collect around the Mo–diamond interface and give rise to enhancement of the field emission properties from Mo to vacuum through diamond.

P‐53: Vacuum In‐Line Sealed CNT‐FED Fabricated by A Screen‐printing of Photo‐sensitive CNT Paste

A carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size was fabricated by using a screen printing of a prepared photo-sensitive CNT paste and vacuum in-line sealing technology. After a surface treatment of the patterned CNT, only the carbon nanotube tips are uniformly exposed on the surface. The diameter of the exposed CNTs are usually about 20nm. The sealing temperature of the panel was around 390 °C and the vacuum level was obtained with 1.4×10−5 torr at the sealing. The field emission properties of the diode type CNT FED panel were characterized. Now, we are developing a triode type CNT FED with a self-aligned gate-emitter structure.

Vacuum in‐line sealing technology of the screen‐printed CNT‐FEA

Abstract We have fabricated a carbon nanotube field emission display (CNT‐FED) panel with a 2‐inch diagonal size by using a screen printing method and vacuum in‐line sealing technology. The sealing temperature of the panel was around 390 °C and the vacuum level was obtained with 1.4×10‐5torr at the sealing. When the field emission properties of a fabricated and sealed CNT‐FED panel were characterized and compared with those of the unsealed panel which was located in a test chamber of vacuum level similar with the sealed panel. As a result, the sealed panel showed similar I‐V characteristics with unsealed one and uniform light emission with very high brightness at a current density of 243 μA/cm2, obtained at the electric field of 10 V/μm.

Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation

Phosphorus doped polycrystalline diamond films were grown using ion implantation in various process steps and were structurally and electrically characterized. When the diamond films were implanted after pretreatment or in the course of diamond growth and were grown by microwave plasma chemical vapor deposition, some modified structural characteristics and improved electrical characteristics were obtained. Secondary ion mass spectrometry analyses of some diamond films led to the conclusion that phosphorus ions and defects in the Si–diamond interface play an important role in the enhancement of field emission from diamond films.

Tip surface silicidation to improve emission behavior of field emitter arrays

In this study, various metal silicides including Ti and Co were applied to gated poly-Si field emitter arrays, and their emission properties have been compared. Silicides were produced by deposition of 25-nm-thick metals on emitter tips through the gate opening and subsequent rapid thermal annealing under N/sub 2/ environment with flow rate of 7.5 slpm. XRD measurement was done to look the constituent and dominant binds of metal-Si compounds. It was found that all the metal layers were completely transformed into MSi/sub 2/ (M: metal element).

Numerical analysis of carbon nanotube field emitter arrays with embedded electron beam focusing structure

A new structure of triode-type carbon nanotube-field emitter arrays (CNT-FEAs) is proposed whose extraction gate is surrounded by CNT emitters. 3-dimensional numerical calculations of electrostatic potential for the proposed CNT-FEA was carried out using the finite element method and the results were compare with those of conventional CNT-FEAs.

Characteristics of phosphorus implanted MPCVD diamond films

Phosphorus ions were implanted on MPCVD (microwave plasma chemical vapor deposition) diamond films in various growth steps and the films were electrically characterized. When diamond films were grown after implantation, improved electrical characteristics were obtained. The results show that phosphorus ions on the Si-diamond interface have an influence on field emission from diamond.

Properties of phosphorus implanted mold type diamond FEAs

Phosphorus implantation was performed at various process steps in the fabrication of the mold type diamond FEAs. Fabricated doped diamond FEAs were structurally investigated by scanning electron microscope (SEM) and Raman spectroscopy and the results were compared with those of flat diamond films. The Raman spectroscopy showed the same doping effect on both flat film and mold FEAs in the same doping condition.