F. Borgatti

The BEAR Beamline at Elettra

The BEAR (Bending Magnet for Emission Absorption and Reflectivity) beamline is installed at the right exit of the 8.1 bending magnet at ELETTRA. The beamline — in operation since January 2003 — delivers linear and circularly polarized radiation in the 5 – 1600 eV energy range. The experimental station is composed of a UHV chamber for reflectivity, absorption, fluorescence and angle resolved photoemission measurements and a UHV chamber for in‐situ sample preparation.

Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence(1,2) and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,(3) well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi(2-x)Mn(x)Te(3) by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor

Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.

Multiscale Morphology of Organic Semiconductor Thin Films Controls the Adhesion and Viability of Human Neural Cells

We investigate how multiscale morphology of functional thin films affects the in vitro behavior of human neural astrocytoma 1321N1 cells. Pentacene thin film morphology is precisely controlled by means of the film thickness, Theta (here expressed in monolayers (ML)). Fluorescence and atomic force microscopy allow us to correlate the shape, adhesion, and proliferation of cells to the morphological properties of pentacene films controlled by saturated roughness, sigma, correlation length, xi, and fractal dimension, d(f). At early incubation times, cell adhesion exhibits a transition from higher to lower values at Theta approximately 10 ML. This is explained using a model of conformal adhesion of the cell membrane onto the growing pentacene islands. From the model fitting of the data, we show that the cell explores the surface with a deformation of the membrane whose minimum curvature radius is 90 (+/- 45) nm. The transition in the adhesion at approximately 10 ML arises from the saturation of xi accompanied by the monotonic increase of sigma, which leads to a progressive decrease of the pentacene local radius of curvature and hence to the surface area accessible to the cell. Cell proliferation is also enhanced for Theta < 10 ML, and the optimum morphology parameter ranges for cell deployment and growth are sigma <or= 6 nm, xi > 500 nm, and d(f) > 2.45. The characteristic time of cell proliferation is tau approximately 10 +/- 2 h.

Understanding the role of tunneling barriers in organic spin valves by hard x-ray photoelectron spectroscopy

We present an ex situ, nondestructive chemical characterization of deeply buried organic-inorganic interfaces using hard x-ray photoelectron spectroscopy. Co/Alq3 and Co/AlOx/Alq3 interfaces were studied in order to determine the role of a thin (1–2 nm) AlOx interdiffusion barrier in organic spin valves. Interfacial Alq3, 15 nm below the surface, exhibits strong sensitivity to the electronic structure of the interfacial region and to the presence of the AlOx. In addition to reducing Co–Alq3 interdiffusion, we find that the barrier prevents charge donation from the Co to the interfacial Alq3, thus preventing the formation of Alq3 anions within the interface region.

Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr₀.₄₈ Ca₀.₅₂ MnO₃ (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.

Chemical insight into electroforming of resistive switching manganite heterostructures

We have investigated the role of the electroforming process in the establishment of resistive switching behaviour for Pt/Ti/Pr0.5Ca0.5MnO3/SrRuO3 layered heterostructures (Pt/Ti/PCMO/SRO) acting as non-volatile Resistance Random Access Memories (RRAMs). Electron spectroscopy measurements demonstrate that the higher resistance state resulting from electroforming of as-prepared devices is strictly correlated with the oxidation of the top electrode Ti layer through field-induced electromigration of oxygen ions. Conversely, PCMO exhibits oxygen depletion and downward change of the chemical potential for both resistive states. Impedance spectroscopy analysis, supported by the detailed knowledge of these effects, provides an accurate model description of the device resistive behaviour. The main contributions to the change of resistance from the as-prepared (low resistance) to the electroformed (high resistance) states are respectively due to reduced PCMO at the boundary with the Ti electrode and to the formation of an anisotropic n-p junction between the Ti and the PCMO layers.

Additive nanoscale embedding of functional nanoparticles on silicon surface

We present a novel additive process, which allows the spatially controlled integration of nanoparticles (NPs) inside silicon surfaces. The NPs are placed between a conductive stamp and a silicon surface; by applying a bias voltage a SiO(2) layer grows underneath the stamp protrusions, thus embedding the particles. We report the successful nanoembedding of CoFe(2)O(4) nanoparticles patterned in lines, grids and logic structures.

Morphological and mechanical properties of alkanethiol self-assembled monolayers investigated via bimodal atomic force microscopy

Alkanethiol Self-Assembly Monolayers (SAMs) were investigated by means of BiModal Atomic Force Microscopy. Morphological and mechanical properties show a parabolic trend vs. the chain length n, which is ascribed to the disorder at the SAMs/Au interface. This explains the trend of charge injection across SAMs in organic field effect transistors.

Focusing-defocusing of keV electrons along [001] and [101] Fe atomic chains

We have investigated the focusing and defocusing process of a primary electron wave along Fe atomic chains. To this end, we measured the intensity of the LVV Auger signal, as a function of the incidence angle of the primary beam, from a Co film buried in a Fe matrix. We found that maximum focusing efficiency takes place for six scatterers along [001]Fe atomic chains, then defocusing starts to set in. However, a significant anisotropy is still detectable at eleven scatterers deep in the bulk. The anisotropy depth profile we measured has been used to evaluate the anisotropy in more complex situations, such as thin films and multilayers.