G. Panaccione

Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices

The outstanding properties of graphene, a single graphite layer, render it a top candidate for substituting silicon in future electronic devices. The so far exploited synthesis approaches, however, require conditions typically achieved in specialized laboratories and result in graphene sheets whose electronic properties are often altered by interactions with substrate materials. The development of graphene-based technologies requires an economical fabrication method compatible with mass production. Here we demonstrate for the fist time the feasibility of graphene synthesis on commercially available cubic SiC/Si substrates of >300 mm in diameter, which result in graphene flakes electronically decoupled from the substrate. After optimization of the preparation procedure, the proposed synthesis method can represent a further big step toward graphene-based electronic technologies.

Analysis of oxygen induced anisotropy crossover in Pt/Co/MOx trilayers

Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from in-plane to out-of-plane. We focused on the influence of plasma oxidation on Pt/Co/AlOx perpendicular magnetic anisotropy. The interfacial electronic structure is analyzed via X-ray photoelectron spectroscopy measurements. It is shown that the maximum of out-of-plane magnetic anisotropy corresponds to the appearance of a significant density of Co-O bondings at the Co/AlOx interface.Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from in-plane to out-of-plane. We focused on the influence of plasma oxidation on Pt/Co/AlOx perpendicular magnetic anisotropy. The interfacial electronic structure is analyzed via X-ray photoelectron spectroscopy measurements. It is shown that the maximum of out-of-plane magnetic anisotropy corresponds to the appearance of a significant density of Co-O bondings at the Co/AlOx interface.

Electric control of magnetism at the Fe/BaTiO3 interface

Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO3 system, only tiny changes of the interfacial Fe magnetic moment upon reversal of the BaTiO3 dielectric polarization have been predicted so far. Here, by using X-ray magnetic circular dichroism in combination with high resolution electron microscopy and first principles calculations, we report on an undisclosed physical mechanism for interfacial magnetoelectric coupling in the Fe/BaTiO3 system. At this interface, an ultrathin oxidized iron layer exists, whose magnetization can be electrically and reversibly switched on-off at room-temperature by reversing the BaTiO3 polarization. The suppression / recovery of interfacial ferromagnetism results from the asymmetric effect that ionic displacements in BaTiO3 produces on the exchange coupling constants in the interfacial oxidized Fe layer. The observed giant magnetoelectric response holds potential for optimizing interfacial magnetoelectric coupling in view of efficient, low-power spintronic devices.

Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence(1,2) and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,(3) well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi(2-x)Mn(x)Te(3) by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission

A detailed understanding of the origin of the magnetism in dilute magnetic semiconductors is crucial to their development for applications. Using hard X-ray angle-resolved photoemission (HARPES) at 3.2 keV, we investigate the bulk electronic structure of the prototypical dilute magnetic semiconductor Ga(0.97)Mn(0.03)As, and the reference undoped GaAs. The data are compared to theory based on the coherent potential approximation and fully relativistic one-step-model photoemission calculations including matrix-element effects. Distinct differences are found between angle-resolved, as well as angle-integrated, valence spectra of Ga(0.97)Mn(0.03)As and GaAs, and these are in good agreement with theory. Direct observation of Mn-induced states between the GaAs valence-band maximum and the Fermi level, centred about 400 meV below this level, as well as changes throughout the full valence-level energy range, indicates that ferromagnetism in Ga(1-x)Mn(x)As must be considered to arise from both p-d exchange and double exchange, thus providing a more unifying picture of this controversial material.

Looking 100 Å deep into spatially inhomogeneous dilute systems with hard x-ray photoemission

We present hard x-ray photoemission measurements from GaAs samples with a 10-A-thick layer of AlAs buried at different depths. The intensity trend versus kinetic energy of the Al 1s signal allows extraction of the x-ray attenuation length, which we find to reach ∼100A at a kinetic energy of 6 keV. On one sample exposed to air for several days we obtain qualitative information on the oxidation at different depth scales by exploiting the energy dependence of the attenuation length. This suggests the strong potential of hard x-ray photoemission in the nondestructive characterization of diluted materials on a depth scale interesting to modern nanotechnologies.

Erratum: Evidence for three-dimensional Fermi-surface topology of the layered electron-doped iron superconductor Ba(Fe1-xCox)2As2

The electronic structure of electron doped iron-arsenide superconductors Ba(Fe1- xCox)2As2 has been measured with Angle Resolved Photoemission Spectroscopy. The data reveal a marked photon energy dependence of points in momentum space where the bands cross the Fermi energy, a distinctive and direct signature of three-dimensionality in the Fermi surface topology. By providing a unique example of high temperature superconductivity hosted in layered compounds with three-dimensional electronic structure, these findings suggest that the iron-arsenides are unique materials, quite different from the cuprates high temperature superconductors.

Experimental setup for high energy photoemission using synchrotron radiation

The instrument VOLPE (volume photoemission from solids) is an experimental setup dedicated to high energy photoemission (PE) experiments. The instrument is equipped with an electrostatic hemispherical spectrometer especially designed to analyze high energy electrons (up to 10 keV) with high resolving power. In order to attain an energy resolution of a few tens of millielectron volts, we designed and constructed a dedicated input lens system, high stability power supplies, and a low dark-count detector and readout electronics. The system has been tested and is now operational on the ID16 beamline at European Synchrotron Radiation Facility, where an optical layout has been developed to perform high energy, high resolution PE experiments. First results show an overall energy resolution (electron + photon) of 71+/-7 meV at 5934 eV. The effective attenuation length of the photoelectrons is estimated to be 5+/-0.5 nm at a kinetic energy of 5 keV

Adsorption of water on Si(001)-2 × 1 and Si(111)-7 × 7 surfaces at 90 and 300 K: A Si 2p core-level and valence band study with synchrotron radiation

We have studied by soft X-ray photoemission (hv = 145 eV) the modifications of the Si 2p core-level and of the valence band during the adsorption of water on Si(001)-2 × 1 and Si(111)-7 × 7 surfaces, at two substrate temperatures (300 and 90 K). In all cases, water reacts with silicon. We have followed the decay of Si 2p and valence-band surface states, as well as the growth of oxidation states, with increasing exposures to H2O. The breaking of H2O into -H and -OH fragments and their attachment to the triply coordinated surface atoms (silicon dimers on Si(001), adatoms and rest-atoms on Si(111)) is not the only reactional mechanism. Oxygen atoms are also inserted into SiSi bonds, so that oxidation offers an alternative channel to H2O dissociation and chemisorption. For both orientations, surface oxidation is facilitated at low temperature. The relative reactivity of the dangling-bonds of Si(111)-7 × 7 has been investigated: both valence band and Si 2p spectra indicate clearly that the rest-atoms are less reactive than the adatoms.

Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe(111)

Photoelectron spectroscopy in combination with piezoforce microscopy reveals that the helicity of Rashba bands is coupled to the nonvolatile ferroelectric polarization of GeTe(111). A novel surface Rashba band is found and fingerprints of a bulk Rashba band are identified by comparison with density functional theory calculations.