Piero Torelli

Electric control of magnetism at the Fe/BaTiO3 interface

Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO3 system, only tiny changes of the interfacial Fe magnetic moment upon reversal of the BaTiO3 dielectric polarization have been predicted so far. Here, by using X-ray magnetic circular dichroism in combination with high resolution electron microscopy and first principles calculations, we report on an undisclosed physical mechanism for interfacial magnetoelectric coupling in the Fe/BaTiO3 system. At this interface, an ultrathin oxidized iron layer exists, whose magnetization can be electrically and reversibly switched on-off at room-temperature by reversing the BaTiO3 polarization. The suppression / recovery of interfacial ferromagnetism results from the asymmetric effect that ionic displacements in BaTiO3 produces on the exchange coupling constants in the interfacial oxidized Fe layer. The observed giant magnetoelectric response holds potential for optimizing interfacial magnetoelectric coupling in view of efficient, low-power spintronic devices.

Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence(1,2) and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,(3) well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi(2-x)Mn(x)Te(3) by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

Experimental setup for high energy photoemission using synchrotron radiation

The instrument VOLPE (volume photoemission from solids) is an experimental setup dedicated to high energy photoemission (PE) experiments. The instrument is equipped with an electrostatic hemispherical spectrometer especially designed to analyze high energy electrons (up to 10 keV) with high resolving power. In order to attain an energy resolution of a few tens of millielectron volts, we designed and constructed a dedicated input lens system, high stability power supplies, and a low dark-count detector and readout electronics. The system has been tested and is now operational on the ID16 beamline at European Synchrotron Radiation Facility, where an optical layout has been developed to perform high energy, high resolution PE experiments. First results show an overall energy resolution (electron + photon) of 71+/-7 meV at 5934 eV. The effective attenuation length of the photoelectrons is estimated to be 5+/-0.5 nm at a kinetic energy of 5 keV

Reversible Photoswitching of a Spin-Crossover Molecular Complex in the Solid State at Room Temperature

Spin-crossover metal complexes are highly promising magnetic molecular switches for prospective molecule-based devices. The spin-crossover molecular photoswitches developed so far operate either at very low temperatures or in the liquid phase, which hinders practical applications. Herein, we present a molecular spin-crossover iron(II) complex that can be switched between paramagnetic high-spin and diamagnetic low-spin states with light at room temperature in the solid state. The reversible photoswitching is induced by alternating irradiation with ultraviolet and visible light and proceeds at the molecular level.

High-energy photoemission in silver: resolving d and sp contributions in valence band spectra

We present high-resolution valence band and core level spectra of silver for photoelectron kinetic energies up to 8 keV. At these kinetic energies we estimate a surface contribution of less than 3%. Taking advantage of the favourable sp/d relative cross-sections, a comparison with the calculated density of states is presented. We observe an increasing photoemission intensity when approaching the Fermi level, which we assign to a free-electron-like character in the 5p-band, whereas the principal s-like contribution is located at the bottom of the d-band. The difference between measured and calculated values of the sp/d cross-section ratio is discussed.

Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As.

We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.

Ultrahigh-vacuum soft x-ray reflectometer

We have designed, built, and tested a new instrument for soft x-ray scattering experiments. The reflectometer works under ultrahigh vacuum and permits in situ preparation and characterization of the samples. In particular, deposition and sputtering operations can be performed while measuring x-ray scattering. We report the results of test measurements performed using synchrotron radiation. The precision of the combined positioning of sample and detector angles is better than 0.01°. Separately, sample and detector rotations have a repeatability that is better than 0.005°. Applications will be in the field of surface physics, with emphasis on magnetic properties of surfaces, thin films, and multilayered structures.

Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As

We have grown an ultrathin epitaxial Fe/MgO bilayer on (Ga, Mn)As by e-beam evaporation in UHV. The system structure has been investigated by high resolution transmission electron microscopy (TEM) experiments which show that the Fe and MgO films, covering completely the (Ga, Mn)As, grow with the epitaxial relationship Fe[100](001) [parallel] MgO[110](001) [parallel] (Ga,Mn)As[110](001). The magnetic reversal process, studied by the magneto-optical Kerr effect (MOKE) at room temperature, demonstrates that the iron is ferromagnetic and possesses a cubic anisotropy, confirming the epitaxy relationship found with TEM. Resistivity measurements across the barrier display a non-Ohmic behavior characterized by cubic conductance as a function of the applied voltage suggesting tunneling-dominated transport across the barrier.