F. Scott Johnson
Texas Instruments
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Publication
Featured researches published by F. Scott Johnson.
Journal of Applied Physics | 2000
Hal Edwards; Vladimir A. Ukraintsev; Richard San Martin; F. Scott Johnson; Philip Menz; Shawn T. Walsh; Stan Ashburn; K. Scott Wills; Ken Harvey; Mi-Chang Chang
The scanning capacitance microscope (SCM) is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SPM). As reported in Edwards et al. [Appl. Phys. Lett. 72, 698 (1998)], scanning capacitance spectroscopy (SCS) is a new data-taking method employing an SCM. SCS produces a two-dimensional map of the electrical pn junctions in a Si device and also provides an estimate of the depletion width. In this article, we report a series of microelectronics applications of SCS in which we image submicron transistors, Si bipolar transistors, and shallow-trench isolation structures. We describe two failure-analysis applications involving submicron transistors and shallow-trench isolation. We show a process-development application in which SCS provides microscopic evidence of the physical origins of the narrow-emitter effect in Si bipolar transistors. We image the depletion width in a Si bipolar transistor to explain an electric field-induced hot-carrier reliability failure. We show two sam...
Archive | 2002
F. Scott Johnson
Archive | 1998
Douglas T. Grider; Stanton P. Ashburn; Katherine E. Violette; F. Scott Johnson
Archive | 1998
F. Scott Johnson
Archive | 1995
F. Scott Johnson; Kelly J. Taylor
Archive | 1997
F. Scott Johnson
Archive | 1995
F. Scott Johnson
Archive | 1995
F. Scott Johnson
Archive | 2001
F. Scott Johnson
Archive | 1995
F. Scott Johnson; Kelly J. Taylor