Faiz Arith

Low voltage CMOS Schmitt Trigger in 0.18μm technology

This paper presents the effect of source voltage on performance of proposed Schmitt Trigger circuit. The proposed circuit was designed based on Conventional Schmitt Trigger by manipulating the arrangement of transistors and the width-length ratio. The simulation results have been carried out based on Mentor Graphics software in term of propagation delay. The circuit layout has been designed and checked by using design rule check (DRC) and layout versus schematic (LVS) method. From these results, the proposed full swing CMOS Schmitt Trigger was able to operate at low voltage (0.8V-1.5V)

Platinum and Aluminium Microresonator Bridges for Artificial Basilar Membrane

The artificial basilar membrane has been developed to mimic the mechanical performance of the basilar membrane in the cochlea. The artificial basilar membrane consists of an array of microbridgeresonators that are mechanically sensitive to the perceived audible frequency range between 20 Hz to 20 kHz. In this work, the finite element (FE) model of the microbridge resonators have been designed in Comsol Multiphysics 4.3 to work close to the audible frequency range. The lumped element (LE) model of the microbridge resonators have been calculated and compared to the simulated FE model. The microbridge resonators array with 0.5 μm thickness, 20 μm width and length varying from 275 μm up to 7700 μm have been designed using two different materials, i.e., platinum (Pt) and aluminium (Al). The microbridge resonators have been found to mimic closely the tonotopicorganisation characteristics of the basilar membrane. From the FE and LE models of the Pt and Almicrobridge resonators, Pt has been found to be a better material than Alfor the artificial basilar membrane design. For the same geometrical dimensions, the Ptmicrobridge resonatorsoperate within the audible frequency range while the Almicrobridge resonatorsoperate approximately 43%-53% above the audible frequency range.

Optimization of Power and Gain in Two-Stage Op-Amp by Using Taguchis Approach

This paper presents a method based on statistical approach which known as Taguchi method. This method is used to optimize power dissipations and gain in a two-stage op-amp. Standard L27 which uses three factors and two outputs is chosen to optimize power and gain in the circuit. Simulation of the circuit has been implemented by using Mentor Graphics DA-IC. From the simulation, the results showed that total power dissipation has decreased from 3.9643 mW to 1.0345 mW. The percentage of power reduction is 73.9%. The overall gain also has been improved from 22 dB to 45.49 dB. The percentage of increment gain in two-stage op-amp is 56%.

Low Cost Electro-Deposition of Cuprous Oxide P-N Homo-Junction Solar Cell

Most of the photovoltaic industry uses wafer of single-crystal and poly-crystal silicon as a material of their photovoltaic (PV) modules. However, the cost of these modules is high due to the material and processing cost. Cuprous oxides (Cu2O) have several features that suitable for future photovoltaic applications. Cu2O can be prepared with simple methods at very low cost. Cu2O p-n homojunction solar cell is a device that converts sunlight to electrical energy, consists of two similar materials for its p-n junction, which is Cu2O. The p-type and n-type of Cu2O thin films are then fabricated to produce solar cells. Other layers aluminium and glass substrate coated with indium tin oxide (ITO) need to be added as a contact for electrons movement. In this study, p-type Cu2O, n-type Cu2O and p-n junction are prepared in order to become accustomed for solar cell applications. To achieve the optimum deposition conditions, p-n junction solar cell is prepared by two-steps electrochemical deposition process. The result from x-ray diffraction (XRD) shows that the peak is dominated by CuO (1, 1, 1). P-n junction is in between the p-type and n-type of Cu2O layer. Al has the thickness of 427.5nm. The second and the third layer are p and n type of Cu2O, which have the thickness of 106.9nm and 92.3nm, respectively. Finally the thickness of ITO layer is 131.1nm.An absorption experiment at AM1 light is performed in order to get the I-V curves, and in fact, to study the electrical solar cells p-n homojunction. Based on I-V curve test, the level of energy conversion of cell is 0.00141% with fill factor, FF 0.94813 which proved that Cu2O p-n homojunction solar cell can be fabricated and produced at very low cost and well function.

NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation

Fabrication of ultra shallow junctions with low contact resistances is desired to advance current CMOS technology. The low Boron activation on Group V for ultra shallow junction formation will makes the chip fabrication works effectively. SilvacoTCAD (Technology Computer Aided Design) manages simulation tasks and analyzing simulation results when ultra-shallow junction formation is using low-boron activation on Phosphorus, Antimony and Arsenic.A stimulate process like implantation, diffusion and dopant activation and epitaxial growth in different semiconductor materials has been analyzed as well as investigate the effects of energy of boron ion beams on ultra shallow junction formation.As a result, the electrical characteristics of NMOS structure by obtaining graph of ID VGS and ID VDShas been studied when there are variations in junction length (Xj), and gatelength (Lg).