Feras M. Alkhalil

Realization of fully tunable FinFET double quantum dots with close proximity plunger gates

This paper presents the realization of a FinFET double quantum dots transistor on ultrathin silicon-on-insulator. In this platform, three Al FinFET gates surround the Si device layer channel forming electrically tunable potential barriers; Si plunger side gates are included to enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to form double quantum dots with adjustable interdot coupling.

VLSI Compatible Parallel Fabrication of Scalable Few Electron Silicon Quantum Dots

144 highly tuneable high density lithographically defined Si double quantum dots (DQDs) are fabricated for the first time in parallel via a scalable VLSI compatible fabrication process for the realisation of single electron qubits for quantum computing. 25 nm DQDs with less than 5 nm in dimensional variation are achieved via the use of Hydrogen silsesquioxane resist and electron beam lithography. Repeatable coulomb oscillations and coulomb diamonds signifying single electron tunneling are observed in the electrical characteristics of a Si DQD structure. This demonstrates the viability and dimensionality of our system and paves the way for single electron spin manipulation in scalable Si based systems.

VLSI compatible parallel fabrication of scalable few electron silicon quantum dots

One-hundred ninety-two highly tuneable high density lithographically defined Si dual double quantum dots (DQDs) are fabricated for the first time in parallel via a scalable VLSI compatible fabrication process for the realization of single electron qubits for quantum computing. 25 nm DQDs with less than 5 nm in dimensional variation are achieved via the use of Hydrogen silsesquioxane resist and electron beam lithography. Repeatable coulomb oscillations and coulomb diamonds signifying single electron tunnelling are observed in the electrical characteristics of a Si DQD structure. This demonstrates the viability and dimensionality of our system and paves the way for single electron spin manipulation in scalable Si-based systems.