Fiacre Rougieux

Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

D.M. is supported by an Australian Research Council QEII Fellowship, L.J.G. acknowledges SenterNovem for support, and B.L. and J.S. acknowledge the support of the German Academic Exchange Service.

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

Funding was provided by the State of Lower Saxony. D.M. is supported by an Australian Research Council QEII Fellowship.

Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

This work was supported by the Australian Research Council ARC and by the DAAD/Go8 researcher exchange funding scheme.

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 � C to 700 � C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration. V C 2011 American Institute of Physics. [doi:10.1063/1.3633492]

A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

There are a number of existing models for estimating the charge states of defects in silicon. In order of increasing complexity, these are (a) the Fermi-Dirac distribution, (b) the Shockley-Last model, (c) the Shockley-Read-Hall model, and (d) the Sah-Shockley model. In this work, we demonstrate their consistency with the general occupancy ratio α, and show that this parameter can be universally applied to predict the charge states of both monovalent and multivalent deep levels, under either thermal equilibrium or steady-state conditions with carrier injection. The capture cross section ratio is shown to play an important role in determining the charge state under non-equilibrium conditions. The application of the general occupancy ratio is compared with the quasi-Fermi levels, which are sometimes used to predict the charge states in the literature, and the conditions where the latter can be a good approximation are identified. The general approach is then applied to the prediction of the temperature- and...

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

We study the boron-oxygen defect in Si co-doped with gallium and boron with the hole density 10 times higher than the boron concentration. Instead of the linear dependence of the defect density on the hole density observed in boron and phosphorus compensated silicon, we find a proportionality to the boron concentration. This indicates the participation of substitutional, rather than interstitial, boron in the defect complex. The measured defect formation rate constant is

Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

This work has been supported by the Australian Research Council (ARC) and the Australian Renewable Energy Agency (ARENA).

Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

This work has been supported by the Australian Renewable Energy Agency (ARENA) fellowships program and the Australian Research Council (ARC) Future Fellowships program.

Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon

This paper investigates the importance of incomplete ionization of dopants in compensated p-type Si and its impact on the majority-carrier density and mobility and thus on the resistivity. Both theoretical calculations and temperature-dependent Hall-effect measurements demonstrate that the carrier density is more strongly affected by incomplete ionization in compensated Si than in uncompensated Si with the same net doping. The previously suggested existence of a compensation-specific scattering mechanism to explain the reduction of mobility in compensated Si is shown not to be consistent with the T-dependence of the measured carrier mobility. The experiment also shows that, in the vicinity of 300 K, the resistivity of compensated Si has a much weaker dependence on temperature than that of uncompensated silicon.

Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

In this paper, we present experimental data regarding the recombination activity and concentration of the boron-oxygen complex in compensated n-type silicon, doped with phosphorus and boron, when subjected to illumination. Unlike the data of Bothe in n-type silicon compensated with thermal donors, our results suggest the dominant defect level in our doping range to be a shallow level (EC- ET = 0.15 eV), with a capture cross-section ratio σn /σp of around 0.006, suggesting a negatively charged center. We also confirm previous results showing an increasing defect density with bias light intensity. Due to the strong lifetime reduction observed, we suggest that this material might not be suited to make high-efficiency n-type solar cells, unless practical strategies to reduce the defect concentration can be developed.