Julien Degoulange
University of New South Wales
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Publication
Featured researches published by Julien Degoulange.
IEEE Journal of Photovoltaics | 2014
Brett Hallam; Phill G. Hamer; Stuart Wenham; Malcolm Abbott; Adeline Sugianto; Alison Maree Wenham; Catherine Chan; GuangQi Xu; J. Kraiem; Julien Degoulange; Roland Einhaus
Through an advanced hydrogenation process that involves controlling and manipulating the hydrogen charge state, substantial increases in the bulk minority carrier lifetime are observed for standard commercial grade boron-doped Czochralski grown silicon wafers from 250-500 μs to 1.3-1.4 ms and from 8 to 550 μs on p-type Czochralski wafers grown from upgraded metallurgical grade silicon. However, the passivation is reversible, whereby the passivated defects can be reactivated during subsequent processes. With appropriate processing that involves controlling the charge state of hydrogen, the passivation can be retained on finished devices yielding independently confirmed voltages on cells fabricated using standard commercial grade boron-doped Czochralski grown silicon over 680 mV. Hence, it appears that the charge state of hydrogen plays an important role in determining the reactivity of the atomic hydrogen and, therefore, ability to passivate defects.
Applied Physics Letters | 2016
Peiting Zheng; Fiacre Rougieux; Christian Samundsett; Xinbo Yang; Yimao Wan; Julien Degoulange; Roland Einhaus; Pascal Rivat; Daniel Macdonald
We present solar cells fabricated with n-type Czochralski–silicon wafers grown with strongly compensated 100% upgraded metallurgical-grade feedstock, with efficiencies above 20%. The cells have a passivated boron-diffused front surface, and a rear locally phosphorus-diffused structure fabricated using an etch-back process. The local heavy phosphorus diffusion on the rear helps to maintain a high bulk lifetime in the substrates via phosphorus gettering, whilst also reducing recombination under the rear-side metal contacts. The independently measured results yield a peak efficiency of 20.9% for the best upgraded metallurgical-grade silicon cell and 21.9% for a control device made with electronic-grade float-zone silicon. The presence of boron-oxygen related defects in the cells is also investigated, and we confirm that these defects can be partially deactivated permanently by annealing under illumination.
IEEE Journal of Photovoltaics | 2017
Peiting Zheng; Fiacre Rougieux; Xinyu Zhang; Julien Degoulange; Roland Einhaus; Pascal Rivat; Daniel Macdonald
We present n-type Czochralski-grown silicon solar cells made from 100% upgraded metallurgical grade silicon feedstock, with an independently certified peak efficiency of 21.1%. We look at the impact of net doping and minority carrier lifetime and mobility on the short-circuit current and the open-circuit voltage.
Solar Energy Materials and Solar Cells | 2014
Maxime Forster; Pierre Wagner; Julien Degoulange; Roland Einhaus; Giuseppe Galbiati; Fiacre Rougieux; Andres Cuevas; E. Fourmond
Progress in Photovoltaics | 2016
Fiacre Rougieux; Christian Samundsett; Kean Chern Fong; Andreas Fell; Peiting Zheng; Daniel Macdonald; Julien Degoulange; Roland Einhaus; Maxime Forster
Physica Status Solidi B-basic Solid State Physics | 2016
Chang Sun; Fiacre Rougieux; Julien Degoulange; Roland Einhaus; Daniel Macdonald
Energy Procedia | 2016
Peiting Zheng; Fiacre Rougieux; Chris Samundsett; Xinbo Yang; Yimao Wan; Julien Degoulange; Roland Einhaus; Pascal Rivat; Daniel Macdonald
IEEE Journal of Photovoltaics | 2018
Rabin Basnet; Fiacre Rougieux; Chang Sun; Sieu P. Phang; Chris Samundsett; Roland Einhaus; Julien Degoulange; Daniel Macdonald
Energy Procedia | 2015
Frédéric Madon; Roland Einhaus; Julien Degoulange; Corrado Comparotto; Guiseppe Galbiati; Eckard Wefringhaus
Energy Procedia | 2017
Romain Couderc; Mohamed Amara; Julien Degoulange; Frédéric Madon; Roland Einhaus