Francois Brillouet

1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors

Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.55 /spl mu/m laser sources. In the paper we present the optimization of the electrical conductivity of AlAs/GaAs n type metamorphic mirrors and analyze their thermal properties.

Thermal behaviour of 1.3 /spl mu/m vertical cavity surface emitting laser

Room temperature, pulsed operation of 1.3 /spl mu/m InGaAsP/InP vertical cavity surface emitting lasers (VCSELs) has been demonstrated. Low threshold currents have been obtained with a non buried structure having dielectric mirrors on both the p and n sides. We discuss the laser results pointing out the importance of thermal properties. The thermal resistance is estimated for p- and n-down mounted lasers.