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IEEE Transactions on Electronics Packaging Manufacturing | 2007

Sn Corrosion and Its Influence on Whisker Growth

John W. Osenbach; John Michael DeLucca; Brian D. Potteiger; Ahmed Amin; R.L. Shook; Frank A. Baiocchi

The microstructure and crystal structure of condensation-induced corrosion products, vapor phase induced oxidation products, Cu-Sn intermetallics, and Sn whiskers that formed on electroplated matte Sn on Cu-alloy after exposure 2500 h in a 60 degC/93%RH ambient were characterized with scanning electron microscopy, (SEM), focused ion beam (FIB) microscopy, energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), and selected area electron diffraction (SAD). The corrosion product was identified as crystalline SnO2. The oxidation of Sn in condensed water was at least four orders of magnitude larger than that in moist vapor at 60 degC. All Sn whiskers were found to be within 125 mum of the corrosion product. Based on these observations, a theory was developed. The theory assumes that oxidation leads to the displacement of Sn atoms within the film. Because the grain boundaries and free surfaces of the film are pinned, the oxidation-induced excess Sn atoms are constrained within the original volume of the Sn-film. The trapped excess Sn atoms create localized stress, excess strain energy, in the Sn-film. If and when the pinning constraint is relaxed, as for example would occur when the surface oxide on the film cracks, then the Sn atoms can diffuse to lower energy configurations. When this occurs, whisker nucleation and growth begins. The theory was tested by detailed measurements and comparison of the corrosion volume and the whisker volume in two different samples. The volume comparisons were consistent with the theory


Journal of Materials Science: Materials in Electronics | 2006

Sn-whiskers: truths and myths

John W. Osenbach; John Michael DeLucca; Brian D. Potteiger; Ahmed Amin; Frank A. Baiocchi


Archive | 2003

Metal-oxide-semiconductor device with enhanced source electrode

Frank A. Baiocchi; Bailey R. Jones; Muhammed Ayman Shibib; Shuming Xu


Archive | 2004

Enhanced substrate contact for a semiconductor device

Frank A. Baiocchi; Bailey R. Jones; Muhammed Ayman Shibib; Shuming Xu


Archive | 2003

Method for making enhanced substrate contact for a semiconductor device

Frank A. Baiocchi; John C. Desko; Bailey R. Jones; Sean Lian


Archive | 2005

Calibration standard for transmission electron microscopy

Frank A. Baiocchi; John Michael DeLucca; James T. Cargo


Archive | 2008

ALLOTROPIC OR MORPHOLOGIC CHANGE IN SILICON INDUCED BY ELECTROMAGNETIC RADIATION FOR RESISTANCE TURNING OF INTEGRATED CIRCUITS

Frank A. Baiocchi; James T. Cargo; John Michael DeLucca; Barry J. Dutt; Charles Martin


Archive | 2008

Method of making electronic entities

Ahmed Amin; Mark Adam Bachman; Frank A. Baiocchi; John Michael DeLucca; John W. Osenbach


Archive | 2007

Inhibition of copper dissolution for lead-free soldering

Ahmed Amin; Mark Adam Bachman; Frank A. Baiocchi; John A. Delucca; John W. Osenbach; Zhengpeng Xiong


Archive | 2007

Soldering method and related device for improved resistance to brittle fracture with an intermetallic compound region coupling a solder mass to an Ni layer which has a low concentration of P, wherein the amount of P in the underlying Ni layer is controlled as a function of the expected volume of the solder mass

Ahmed Amin; Frank A. Baiocchi; John Michael DeLucca; John W. Osenbach; Brian T. Vaccaro

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