Frank Greer

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.

Toward Total Automation of Microfluidics for Extraterrestial In Situ Analysis

Despite multiple orbiter and landed missions to extraterrestrial bodies in the solar system, including Mars and Titan, we still know relatively little about the detailed chemical composition and quantity of organics and biomolecules in those bodies. For chemical analysis on astrobiologically relevant targets such as Mars, Europa, Titan, and Enceladus, instrumentation should be extremely sensitive and capable of analyzing a broad range of organic molecules. Microchip capillary electrophoresis (μCE) with laser-induced fluorescence (LIF) detection provides this required sensitivity and targets a wide range of relevant markers but, to date, has lacked the necessary degree of automation for spaceflight applications. Here we describe a fully integrated microfluidic device capable of performing automated end-to-end analyses of amino acids by μCE with LIF detection. The device integrates an array of pneumatically actuated valves and pumps for autonomous fluidic routing with an electrophoretic channel. Operation of the device, including manipulation of liquids for sample pretreatment and electrophoretic analysis, was performed exclusively via computer control. The device was validated by mixing of laboratory standards and labeling of amino acids with Pacific Blue succinimidyl ester followed by electrophoretic analysis. To our knowledge, this is the first demonstration of completely automated end-to-end μCE analyses on a single, fully integrated microfluidic device.

Ultraviolet antireflection coatings for use in silicon detector design

We report on the development of coatings for a charged-coupled device (CCD) detector optimized for use in a fixed dispersion UV spectrograph. Because of the rapidly changing index of refraction of Si, single layer broadband antireflection (AR) coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a coated CCD detector with theoretical quantum efficiencies (QEs) of greater than 60% at wavelengths from 120 to 300 nm. This high efficiency may be reached by coating a backside-illuminated, thinned, delta-doped CCD with a series of thin film AR coatings. The materials tested include MgF(2) (optimized for highest performance from 120-150 nm), SiO(2) (150-180 nm), Al(2)O(3) (180-240 nm), MgO (200-250 nm), and HfO(2) (240-300 nm). A variety of deposition techniques were tested and a selection of coatings that minimized reflectance on a Si test wafer were applied to functional devices. We also discuss future uses and improvements, including graded and multilayer coatings.

Atomic layer deposition of magnesium fluoride via bis(ethylcyclopentadienyl)magnesium and anhydrous hydrogen fluoride

A new process has been developed to deposit magnesium fluoride (MgF2) thin films via atomic layer deposition (ALD) for use as optical coatings in the ultraviolet. MgF2 was deposited in a showerhead style ALD reactor using bis(ethylcyclopentadienyl)magnesium and anhydrous hydrogen fluoride (HF) as precursors at substrate temperatures from 100 to 250 °C. The use of HF was observed to result in improved morphology and reduced impurity content compared to other reported MgF2 ALD approaches that use metal fluoride precursors as the fluorine-containing chemistry. Characterization of these films has been performed using spectroscopic ellipsometry, atomic force microscopy, and x-ray photoelectron spectroscopy for material deposited on silicon substrates. Films at all substrate temperatures were transparent at wavelengths down to 190 nm and the low deposition temperature combined with low surface roughness makes these coatings good candidates for a variety of optical applications in the far ultraviolet.

A system and methodologies for absolute quantum efficiency measurements from the vacuum ultraviolet through the near infrared

In this paper we present our system design and methodology for making absolute quantum efficiency (QE) measurements through the vacuum ultraviolet (VUV) and verify the system with delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, good dewar chamber vacuum to prevent on-chip condensation, and more stringent handling requirements.

Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency

The authors report here on a new technique, combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate back illuminated silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155–300 nm). This report describes in detail the unique surface engineering approaches used and demonstrates the robustness of detector performance that is obtained by achieving atomic level precision at key steps in the fabrication process. The characterization, materials, and devices produced in this effort will be presented along with comparison to other approaches.

Plasma treatment methods to improve indium bump bonding via indium oxide removal

Flip chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices which directly connects an active element or a detector to a substrate readout face down, eliminating the need for wire bonding. Indium bump technology has been a part of hybridization for many years and has been extensively employed in the infrared imager industry. However, obtaining a reliable, high yield process for high density patterns of bumps can be quite difficult in part due to the tendency of the indium bumps to oxidize during exposure to air. In this study, plasma, thermal, and wet chemical methods were screened to determine their ability to remove indium oxide from indium bumps. A novel two-step plasma process using methane, argon, and hydrogen was developed that removes indium oxide from indium bumps after prolonged air exposure while maintaining a low sample temperature. This method was tested by fabricating a fully hybridized scientific grade visible complementary metal oxide semiconduc...

Enhanced High-Performance Detectors for Astronomy, Planetary and Terrestrial Applications

Antireflection coatings are grown directly onto detector surfaces by atomic layer deposition. Through careful design of single- and multi-layer coatings, optical performance can be optimized for specific applications.