Matthew R. Dickie

Delta-doped back-illuminated CMOS imaging arrays: progress and prospects

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990s, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency

The authors report here on a new technique, combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate back illuminated silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155–300 nm). This report describes in detail the unique surface engineering approaches used and demonstrates the robustness of detector performance that is obtained by achieving atomic level precision at key steps in the fabrication process. The characterization, materials, and devices produced in this effort will be presented along with comparison to other approaches.

Fabrication and characteristics of free-standing shaped pupil masks for TPF-coronagraph

Direct imaging and characterization of exo-solar terrestrial planets require coronagraphic instruments capable of suppressing star light to 10-10. Pupil shaping masks have been proposed and designed1 at Princeton University to accomplish such a goal. Based on Princeton designs, free standing (without a substrate) silicon masks have been fabricated with lithographic and deep etching techniques. In this paper, we discuss the fabrication of such masks and present their physical and optical characteristics in relevance to their performance over the visible to near IR bandwidth.

High contrast internal and external coronagraph masks produced by various techniques

High contrast internal and external coronagraphic imaging requires a variety of masks depending on different architectures to suppress star light. Various fabrication technologies are required to address a wide range of needs including gradient amplitude transmission, tunable phase profiles, ultra-low reflectivity, precise small scale features, and low-chromaticity. We present the approaches employed at JPL to produce pupil plane and image plane coronagraph masks, and lab-scale external occulter type masks by various techniques including electron beam, ion beam, deep reactive ion etching, and black silicon technologies with illustrative examples of each. Further development is in progress to produce circular masks of various kinds for obscured aperture telescopes.

Broadband suppression and occulter position sensing at the Princeton occulter testbed

The Princeton occulter testbed uses long-distance propagation with a diverging beam and an optimized occulter mask to simulate the performance of external occulters for finding extrasolar planets. We present new results from the testbed in both monochromatic and broadband light. In addition, we examine sensing and control of occulter position using out-of-band spectral leak around the occulter and occulter position tolerancing. These results are validated by numerical simulations of propagation through the system.

Plasma treatment methods to improve indium bump bonding via indium oxide removal

Flip chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices which directly connects an active element or a detector to a substrate readout face down, eliminating the need for wire bonding. Indium bump technology has been a part of hybridization for many years and has been extensively employed in the infrared imager industry. However, obtaining a reliable, high yield process for high density patterns of bumps can be quite difficult in part due to the tendency of the indium bumps to oxidize during exposure to air. In this study, plasma, thermal, and wet chemical methods were screened to determine their ability to remove indium oxide from indium bumps. A novel two-step plasma process using methane, argon, and hydrogen was developed that removes indium oxide from indium bumps after prolonged air exposure while maintaining a low sample temperature. This method was tested by fabricating a fully hybridized scientific grade visible complementary metal oxide semiconduc...

Progress on the occulter experiment at Princeton

An occulter is used in conjunction with a separate telescope to suppress the light of a distant star. To demonstrate the performance of this system, we are building an occulter experiment in the laboratory at Princeton. This experiment will use an etched silicon mask as the occulter, with some modifications to try to improve the performance. The occulter is illuminated by a diverging laser beam to reduce the aberrations from the optics before the occulter. We present the progress of this experiment and expectations for future work.

Exoplanet coronagraph shaped pupil masks and laboratory scale star shade masks: design, fabrication and characterization

Star light suppression technologies to find and characterize faint exoplanets include internal coronagraph instruments as well as external star shade occulters. Currently, the NASA WFIRST-AFTA mission study includes an internal coronagraph instrument to find and characterize exoplanets. Various types of masks could be employed to suppress the host star light to about 10-9 level contrast over a broad spectrum to enable the coronagraph mission objectives. Such masks for high contrast internal coronagraphic imaging require various fabrication technologies to meet a wide range of specifications, including precise shapes, micron scale island features, ultra-low reflectivity regions, uniformity, wave front quality, achromaticity, etc. We present the approaches employed at JPL to produce pupil plane and image plane coronagraph masks by combining electron beam, deep reactive ion etching, and black silicon technologies with illustrative examples of each, highlighting milestone accomplishments from the High Contrast Imaging Testbed (HCIT) at JPL and from the High Contrast Imaging Lab (HCIL) at Princeton University. We also present briefly the technologies applied to fabricate laboratory scale star shade masks.

Nanofabrication of ultra-low reflectivity black silicon surfaces and devices (Presentation Recording)

Optical devices with features exhibiting ultra low reflectivity on the order of 10-7 specular reflectance in the visible spectrum are required for coronagraph instruments and some spectrometers employed in space research. Nanofabrication technologies have been developed to produce such devices with various shapes and feature dimensions to meet these requirements. Infrared reflection is also suppressed significantly with chosen wafers and processes. Particularly, devices with very high (>0.9) and very low reflectivity (<10-7) on adjacent areas have been fabricated and characterized. Significantly increased surface area due to the long needle like nano structures also provides some unique applications in other technology areas. We present some of the approaches, challenges and achieved results in producing and characterizing such devices currently employed in laboratory testbeds and instruments.

Anti-Reflection Coatings for Silicon Ultraviolet Detectors

We report on development of antireflective coatings optimized for a telescope detector in a UV spectrograph. We discuss progress in the development of a CCD with theoretical QE greater than 60% from 100 to 300nm.