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Featured researches published by Frank Stietz.


Microelectronic Engineering | 2002

Molecular contamination mitigation in EUVL by environmental control

Norbert Koster; Rik Jansen; Annemieke van de Runstraat; Frank Stietz; Marco Wedowski; Hans Meiling; Roman Klein; Alexander Gottwald; Frank Scholze; Matthieu Visser; Ralph Kurt; P. C. Zalm; Eric Louis; Andrey Yakshin

Abstract EUVL tools operate under vacuum conditions to avoid absorption losses. Under these conditions, the MoSi multilayer mirrors are contaminated, resulting in reduced reflection and thus throughput. We report on experiments on MoSi mirrors exposed to EUV radiation from a synchrotron. To mimic the effects of EUV radiation we also exposed samples using an electron gun. The oxidation rate was found to be ∼0.016 nm/h per mW/mm 2 of EUV radiation under conditions expected for a high throughput EUVL system. This oxidation can to a large extent be suppressed by using smart gas blend strategies during exposure, e.g. using ethanol. A carbon growth rate of 0.25 nm/h was found for a hydrocarbon pressure of 10 −9 mbar Fomblin. We demonstrate that carbonisation can be suppressed by admitting oxygen during electron gun exposure.


Optical Microlithography XVI | 2003

Compaction and Rarefaction of Fused Silica with 193-nm Excimer Laser Exposure

J. Martin Algots; Richard L. Sandstrom; William N. Partlo; Petar Maroevic; Eric Eva; Michael Gerhard; Ralf Linder; Frank Stietz

Extensive testing of the laser damage behavior of fused silica has been performed over the past few years by several researchers. The results have shown that compaction and rarefaction / expansion of the material can occur. The actually observed process depends on the used energy density and laser pulse number at constant pulse length. In order to check the influence of the different laser parameters in more detail, an experimental set up has been constructed that allows us to investigate not only the influence of the energy density and laser pulse number but also the effect of the integrated square pulse width on the laser damage behavior. An optical delay line is used to create a longer integrated pulse width than the natural laser pulse width. To make these tests relevant to the microlithography community, the integrated energy densities chosen for these tests span the range typically found in the projection optics of a 193-nm excimer laser-based microlithography tool. The samples are exposed to several billions of pulses with wavefront measurements made periodically.


International Symposium on Optical Science and Technology | 2001

Lifetime testing of EUV optics using intense synchrotron radiation at the PTB Radiometry Laboratory

Roman Klein; Alexander Gottwald; Frank Scholze; R. Thornagel; Johannes Tuemmler; Gerhard Ulm; Marco Wedowski; Frank Stietz; Norbert Koster; J. van Elp

Degradation of EUV optics during irradiation is a crucial topic as regards lifetime and performance in EUV lithography. To simulate irradiation conditions for future lithography tools, PTB (the German national metrology institute) operates two dedicated beamlines at the electron storage ring BESSY II. Both, undispersed undulator radiation from an EUV optimized undulator as well as focused and filtered bending magnet radiation can be used. Both beamlines provide EUV radiation with power densities of several mW / mm2. A dedicated irradiation chamber with sample load lock and differential pumping allows components such as substrates, multilayer mirrors or filters to be exposed to EUV radiation under different vacuum conditions. At the same laboratory, high-accuracy EUV reflectometry can be performed for proximate assessment of the resulting performance.


International Symposium on Optical Science and Technology | 2001

Prevention of MoSi multilayer reflection loss in EUVL tools

Hans Meiling; Frank Stietz; Marco Wedowski; Roman Klein; Ralph Kurt; Eric Louis; Andrey Yakshin

Extreme ultraviolet lithography requires vacuum conditions in the optical train. In order to maintain sufficient energy throughput, reflection reduction of multilayer mirrors due to contamination has to be minimized. We report on oxidation and carbonization experiments on MoSi mirrors under exposure with EUV radiation from a synchrotron. To mimic the effects of EUV radiation we also exposed samples using an electron gun. The oxidation rate was found to be ~0.015 nm/h per mW/mm2 of EUV radiation under vacuum conditions that are typical for a high throughput EUVL system, I.e. 10-6 mbar H2O. This oxidation can to a large extend be suppressed by using smart gas blend strategies during exposure, e.g. using ethanol. A deposition rate of 0.25 nm/h was found when the hydrocarbon pressure of Fomblin was reduced to 10(superscript -9 mbar. We demonstrate that carbonization can be suppressed by admitting oxygen during electron gun exposure.


Archive | 2003

Device, EUV lithographic device and method for preventing and cleaning contamination on optical elements

Marco E. Wedowski; Frank Stietz; Bas Mertens; Roman Klein


Archive | 2002

Optical element and method for its manufacture as well as lithography apparatus and method for manufacturing a semiconductor device

Andrey Yakshin; Eric Louis; Frederik Bijkerk; Marco Wedowski; Roman Klein; Frank Stietz


Archive | 2003

Prevention of contamination of optical elements and cleaning said elements

Roman Klein; Frank Stietz; Marco Wedowski


Archive | 2002

Vorrichtung, EUV-Lithographiegerät und Verfahren zur Vermeidung und Reinigung von Kontamination auf optischen Elementen

Marco Wedowski; Frank Stietz; Bas Mertens; Roman Klein


Archive | 2004

Electrode arrangement, and use thereof

Frank Stietz; Marko Wedowski; Markus Weiss


Archive | 2004

Method for producing radiation-resistant quartz glass material, and quartz glass material

Ralf Lindner; Frank Stietz; Udo Nothelfer; Eric Eva

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Roman Klein

German National Metrology Institute

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Frederik Bijkerk

MESA+ Institute for Nanotechnology

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