Markus Weiss

EUV time-resolved studies on carbon growth and cleaning

This paper presents first results to assess the feasibility of a cleaning strategy for EUV production tools. The EUV experiments were performed in a dedicated UHV contamination chamber connected to the DLW20 dipole beam line at the PTB laboratories at BESSY II in Berlin. An in-situ reflectometry system has been implemented inside the contamination chamber to allow for real-time detection of mirror reflection changes. The reproducibility of the in-situ reflectometry system has proven to be about 0.03%, allowing the measurement of reflection changes below 0.1%. Cleaning cycles were performed at producation tool power density levels, i,e,, 10-30 mW/mm2 broadband radiation, on capped Mo/Si mirror samples. Carbon was deposited intentionally at ypical hydrocarbon pressures in the 10-8 mbar regime. Cleaning was done at background levels of hydrocarbons and 10-4 mbar molecular oxygen. First results show that cleaning of a mirror at high power densities and typical tool conditions can restore the reflection close to its initial value.

Actinic review of EUV masks: first results from the AIMS EUV system integration

The EUV mask infrastructure is of key importance for a successful introduction of EUV lithography into volume production. In particular, for the production of defect free masks, actinic review of potential defect sites is required. To realize such an actinic review tool, Zeiss and the SEMATECH EUVL Mask Infrastructure consortium started a development programme for an EUV aerial image metrology system (AIMS™ EUV). In this paper, we discuss the status of the on-going system integration and show first results from the first light tests of the prototype tool.

Actinic review of EUV masks: Status and recent results of the AIMS EUV system

The EUV mask infrastructure is of key importance for the successful introduction of EUV lithography into volume production. In particular, for the production of defect free masks an actinic review of potential defect sites is required. To realize such an actinic review tool, Carl Zeiss and the SEMATECH EUVL Mask Infrastructure consortium started a development program for an EUV aerial image metrology system, the AIMS™ EUV. In this paper, we discuss the current status of the prototype integration and show recent results.

AIMS EUV first light imaging performance

Overcoming the challenges associated with photomask defectivity is one of the key aspects associated with EUV mask infrastructure. In addition to establishing specific EUV mask repair approaches, the ability to identify printable mask defects that require repair as well as to verify if a repair was successful are absolutely necessary. Such verification can only be performed by studying the repaired region using actinic light at an exact emulation of the scanner illumination conditions of the mask as can be done by the AIMSTM EUV. ZEISS, in collaboration with the SEMATECH EUVL Mask Infrastructure (EMI) consortium are currently developing the AIMSTM EUV system and have recently achieved First Light on the prototype system, a major achievement. First light results will be presented in addition to the current development status of the system.

Status of the AIMS EUV development project

The need for an actinic wavelength AIMS™ EUV tool by 2014 has been defined by SEMATECH due to the challenges associated with EUV mask manufacture and defectivity. The AIMS™ EUV development project began in June of 2011 as a collaboration between ZEISS and the SEMATECH EUVL Mask Infrastructure (EMI) consortium. The project remains on track to meet the first commercial tool shipment in September 2014. The current design status of the system after two years as well as recent progress in the prototype build will be presented.

Development status and infrastructure progress update of aerial imaging measurements on EUV masks

The high volume device manufacturing infrastructure for the 22nm node and below based on EUVL technology requires defect-free EUV mask manufacturing as one of its foundations. The EUV Mask Infrastructure program (EMI) initiated by SEMATECH has identified an actinic measurement system for the printability analysis of EUV mask defects to ensure defect free mask manufacturing and cost-effective high-volume EUV production as an infrastructural prerequisite for the EUVL roadmap ([1], [2]). The Concept and Feasibility study for the AIMSTM EUV resulted in a feasible tool concept for 16nm defect printability review. The main development program for the AIMSTM EUV has been started at Carl Zeiss leading to a commercialized tool available in 2014. In this paper we will present the status of the progress of the design phase of this development and an infrastructure progress update of the EUV Mask defect printability review.

Status of the AIMS(TM) EUV Project

In previous conferences the status of the AIMS™ EUV project has been presented in which the basic layout scheme and preliminary design have been shown along with the targeted performance specification levels to be met. Presently the final design milestone of the project has been successfully completed and assembly of the prototype tool is underway. The final design concept will be presented along with the current status of the tool and simulated performance data.