G. T. Du

Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy

The properties of the ZnO thin films prepared by metalorganic vapor phase epitaxy under various oxygen partial pressures were thoroughly studied. It was found that the conduction type in undoped ZnO epilayers could be controlled by adjusting the family VI precursor, oxygen partial pressure during growth. The films were characteristic of n-type conductivity under oxygen partial pressure lower than 45 Pa. With the increase of oxygen content, the crystallinity of the ZnO thin films was degraded to polycrystalline with additional (10–12) orientation and the intrinsic p-type ZnO was produced as the oxygen partial pressure was larger than 55 Pa. The hole concentration and mobility could reach to 1.59×1016u200acm−3 and 9.23 cm2u200aV−1u200as−1, and the resistivity was 42.7 Ωu200acm. The near-band-edge emission and the deep level emission in photoluminescence (PL) spectra at room temperature were influenced strongly by the oxygen partial pressure. Temperature-dependent PL spectra in n-type ZnO films showed a dominant neutral-don...

Structural and optical properties of ZnO film by plasma-assisted MOCVD

High quality ZnO film was deposited by plasma-assisted metal-organic chemical vapor deposition (MOCVD). We observed a dominant peak at 34.6° due to (0 0 2) ZnO, which indicated that the growth of ZnO film was strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° indicating relatively small mosaicity. Photoluminescence (PL) measurement was performed at both room temperature and low temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. From PL spectrum at 10 K, we observed A-exciton emission at 3.377 eV and D°X bound exciton transition at 3.370 eV. The donor–acceptor transition and LO phonon replicas were observed at 3.333 and 3.241 eV respectively. Raman scattering was performed in back scattering at room temperature. The E2, A1(LO) and A1(TO) mode was seen at 437.6, 575.8 and 380 cm−1 respectively. In comparison with Raman spectrum of ZnO powder, we found that ZnO film was nearly free of strain, which indicated high crystal quality.

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses of low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts and the peak intensity decreases with increasing GaN cap layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in the increased interface roughness, higher defect density, and even lead to a thermal degradation of QW layers. An extra growth interruption introduced before the growth of GaN cap layer can help with evaporating the floating indium atoms, and therefore is an effective method to improve the optical properties of high indium content InGaN/GaN MQWs.

Growth and property characterizations of photonic crystal structures consisting of colloidal microparticles

High-quality three-dimensional polystyrene–air photonic crystal structures with particle diameters of 200, 270, and 340 nm were grown with a quasi-equilibrium evaporation technique. The effects of the removal of interval water were evident as a blueshift of peaks, enhancement of the transmission attenuation, and changes in the gap/midgap ratio. Frequency scaling and incidence-angle–dependent transmission were also investigated; both show good agreement with the numerical simulation.

Photonic Gaps in Reduced-Order Colloidal Particulate Assemblies

Colloidal assemblies consisting of monotonic polystyrene microspheres with a controlled degree of ordering were fabricated, and exhibited rich spectral behaviors. Smooth and spike-modulated broad attenuation regions in transmission spectra were observed in highly disordered and partly disordered samples, respectively, in contrast to the narrow peaks observed in well-ordered photonic crystals. These properties are interpreted consistently by analyzing the variation of the volume of closely packed units.

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes

A series of samples with varying growth pressure are grown and their optical and structural properties are investigated. It is found that the residual carbon concentration decreases when the reactor pressure increases from 80 to 450 Torr during the InGaN/GaN multiple quantum well growth. It results in an enhanced peak intensity of electroluminescence because carbon impurities can induce deep energy levels and act as non-radiative recombination centers in InGaN layers.

Three-dimensional photonic crystal structures achieved with self-organization of colloidal particles

Three-dimensional polystyrene/air photonic crystal structure with different particle diameters: 200, 270 and 340 nm was achieved. Strong photonic band gap effect reflected with transmission minimum down to −16 dB was observed. The central wavelengths of the valleys of spectra were well fitted with theoretical calculation. The augmentation of band gap effect versus particle diameter was attributed to an improved self-assembling of particles. An analysis of transmission spectra is also presented. The agreement between the results of experiment and numerical analysis is good.

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

In order to reduce the internal optical loss of InGaNlaser diodes, an unintentionally dopedGaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

Reducing the resistivity of low temperature grown p-Al0.09Ga0.91N layers is crucial to improving the performance of GaN-based laser diodes. In this study, growth conditions of low temperature grown p-Al0.09Ga0.91N layers are monitored and the role of C impurity is investigated systematically. On the basis of the dependence of resistivity on C concentration and the photoluminescence analysis, it is found that C impurities act as donors in p-Al0.09Ga0.91N layer, and reducing the C concentration can reduce its compensation effect on Mg acceptor. Finally, a low resistivity of 4.2 Ω·cm is achieved for the low temperature grown p-Al0.09Ga0.91N.Reducing the resistivity of low temperature grown p-Al0.09Ga0.91N layers is crucial to improving the performance of GaN-based laser diodes. In this study, growth conditions of low temperature grown p-Al0.09Ga0.91N layers are monitored and the role of C impurity is investigated systematically. On the basis of the dependence of resistivity on C concentration and the photoluminescence analysis, it is found that C impurities act as donors in p-Al0.09Ga0.91N layer, and reducing the C concentration can reduce its compensation effect on Mg acceptor. Finally, a low resistivity of 4.2 Ω·cm is achieved for the low temperature grown p-Al0.09Ga0.91N.

A new method of restraining the Fabry-Perot resonance

In the paper, we present a new method of restraining the Fabry–Perot resonance. The method is to combine dip angle with taper angle in the structure of the device and avoids the process of antireflection coatings. The experimental results show that restraining effect is apparent. A high threshold current has been obtained for the sample with both dip angle and taper angle structure. It provides a new method to make traveling-wave optical amplifiers.