Gautam Gangasani

A 16-Gb/s Backplane Transceiver With 12-Tap Current Integrating DFE and Dynamic Adaptation of Voltage Offset and Timing Drifts in 45-nm SOI CMOS Technology

This paper presents a 16-Gb/s 45-nm SOI CMOS transceiver for multi-standard backplane applications. The receiver uses a 12-tap DFE with circuit refinements for supporting higher data rates. Both the receiver and the transmitter use dynamic adaptation to combat parameter drift due to changing supply voltage and temperature. A 3-tap FFE is included in the source-series-terminated driver. The combination of DFE and FFE permits error-free NRZ signaling at 16 Gb/s over channels exceeding 30 dB loss. The 8-port core with two PLLs is fully characterized for 16 GFC and consumes 385 m W/link.

Time-Domain Model for Injection Locking in Nonharmonic Oscillators

Time-domain delay-based modeling of injection locking is used to describe injection-locking phenomena in nonharmonic oscillators. The model is used to predict the locking bandwidth, and the locking dynamics of the locked oscillator. The model predictions are verified against simulations and measurements of a four-stage differential ring oscillator. The model is further used to predict the injection-locking behavior of a single-ended CMOS inverter based ring oscillator.

A 16-Gb/s backplane transceiver with 12-tap current integrating DFE and dynamic adaptation of voltage offset and timing drifts in 45-nm SOI CMOS technology

This paper presents a 16-Gb/s 45-nm SOI CMOS transceiver for multi-standard backplane applications. The receiver uses a 12-tap DFE with circuit refinements for supporting higher data rates. Both the receiver and the transmitter use dynamic adaptation to combat parameter drift due to changing supply and temperature. A 3-tap FFE is included in the source-series-terminated driver. The combination of DFE and FFE permits error-free NRZ signaling at 16-Gb/s over channels exceeding 30dB loss. The 8-port core with two PLLs is fully characterized for 16GFC and consumes 385mW/link.

A 32 Gb/s Backplane Transceiver With On-Chip AC-Coupling and Low Latency CDR in 32 nm SOI CMOS Technology

This paper describes key design features of a 32 Gb/s 4-tap FFE/15-tap DFE transceiver in 32 nm SOI CMOS which mitigate major sources of degradation in transceiver performance. The transceiver employs a passive feed-forward restore (FFR) scheme in an on-chip AC-coupling network to prevent pattern-dependent baseline wander, a low-latency clock and data recovery (CDR) to improve high-frequency jitter tolerance, and a token-based power management scheme to reduce supply ripple. At 32 Gb/s, the transceiver can equalize a channel with 30 dB of loss at a bit-error rate below 10-12 while consuming 21 mW/Gbps at 1 V supply and an area of 0.7 mm2.

A 32-Gb/s backplane transceiver with on-chip AC-coupling and low latency CDR in 32-nm SOI CMOS technology

This paper describes key design features of a 32-Gb/s 4-tap FFE/15-tap DFE transceiver in 32-nm SOI CMOS which mitigate major sources of degradation in transceiver performance. The transceiver employs a passive feed-forward restore (FFR) scheme in an on-chip AC-coupling network to prevent pattern-dependent baseline wander, a low latency clock and data recovery (CDR) to improve high frequency jitter tolerance, and a token-based power management scheme to reduce supply ripple. The transceiver can equalize a channel with 30dB of loss at a bit-error rate below 10-12 while using 21 mW/Gbps at 1V supply and 0.7 mm2.