Gavin P. Campbell

Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene.

Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomic-resolution scanning tunneling microscopy (STM). The electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ∼0.4 eV at the monolayer MoS2 edges.

Electronic and Mechanical Properties of Graphene–Germanium Interfaces Grown by Chemical Vapor Deposition

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110) leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90% of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this work, it is clear that the interaction between graphene and the underlying Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene-Ge interface.

Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics

Monolayer MoS2 has recently been identified as a promising material for high-performance electronics. However, monolayer MoS2 must be integrated with ultrathin high-κ gate dielectrics in order to realize practical low-power devices. In this letter, we report the chemical vapor deposition (CVD) of monolayer MoS2 directly on 20 nm thick Al2O3 grown by atomic layer deposition (ALD). The quality of the resulting MoS2 is characterized by a comprehensive set of microscopic and spectroscopic techniques. Furthermore, a low-temperature (200 °C) Al2O3 ALD process is developed that maintains dielectric integrity following the high-temperature CVD of MoS2 (800 °C). Field-effect transistors (FETs) derived from these MoS2/Al2O3 stacks show minimal hysteresis with a sub-threshold swing as low as ∼220 mV/decade, threshold voltages of ∼2 V, and current ION/IOFF ratio as high as ∼104, where IOFF is defined as the current at zero gate voltage as is customary for determining power consumption in complementary logic circuits....

Resolving the Chemically Discrete Structure of Synthetic Borophene Polymorphs

Atomically thin two-dimensional (2D) materials exhibit superlative properties dictated by their intralayer atomic structure, which is typically derived from a limited number of thermodynamically stable bulk layered crystals (e.g., graphene from graphite). The growth of entirely synthetic 2D crystals, those with no corresponding bulk allotrope, would circumvent this dependence upon bulk thermodynamics and substantially expand the phase space available for structure-property engineering of 2D materials. However, it remains unclear if synthetic 2D materials can exist as structurally and chemically distinct layers anchored by van der Waals (vdW) forces, as opposed to strongly bound adlayers. Here, we show that atomically thin sheets of boron (i.e., borophene) grown on the Ag(111) surface exhibit a vdW-like structure without a corresponding bulk allotrope. Using X-ray standing wave-excited X-ray photoelectron spectroscopy, the positions of boron in multiple chemical states are resolved with sub-angström spatial resolution, revealing that the borophene forms a single planar layer that is 2.4 Å above the unreconstructed Ag surface. Moreover, our results reveal that multiple borophene phases exhibit these characteristics, denoting a unique form of polymorphism consistent with recent predictions. This observation of synthetic borophene as chemically discrete from the growth substrate suggests that it is possible to engineer a much wider variety of 2D materials than those accessible through bulk layered crystal structures.

Structural Features of PbS Nanocube Monolayers upon Treatment with Mono- and Dicarboxylic Acids and Thiols at a Liquid–Air Interface

This paper describes the ordering of PbS nanocubes (NCs) within free-standing monolayers (suspended on acetonitrile), upon exchanging the native oleate ligands for a series of thiolate and carboxylate ligands at the liquid-air interface. Treatment with either carboxylic acids or thiols effectively decreases the inter-NC separation of nearest-neighbor particles without etching the NC surface. Dicarboxylic acids and dithiols bridge neighboring NCs with an interparticle separation that is consistent with fully extended, bridging ligands. Monocarboxylic acids and monothiols separate NCs by an amount governed by their length, with long-chain ligands showing significant intercalation. (1)H NMR spectroscopy shows carboxylic acids are more effective at replacing the native oleate than are thiols, which we ascribe to the lower pKa values of carboxylic acids. The fast exchange that occurs upon treatment with monocarboxylic acids kinetically traps the clusters of particles in nonclosed packed geometries, so monolayers treated with monocarboxylic acids are, on average, less ordered than those treated with monothiols. Ex situ electron microscopy and grazing incidence small-angle X-ray scattering (GISAXS) analyses of deposited films on Si/SiO2 substrates show that NCs exchanged with nonbridging ligands pack more efficiently at long length scales than do NCs exchanged with bridging ligands, due primarily to the creation of defects within the NC lattice in response to the rigidity of the bridging ligand.