Georg Stefan Dr. Düsberg

CVD‐Growth of In‐Situ Contacted Single‐Walled Carbon Nanotubes

We report on the CVD‐growth of single‐walled carbon nanotubes (SWCNTs) and their electrical characterization. Growth between catalyst covered Mo‐pads yields in‐situ contacted SWCNTs. With this approach, only one level of conventional photolithography is required to obtain SWCNTs ready for field‐effect measurements. The SWCNT yield depends strongly on the catalyst composition and growth conditions, which have been investigated over a wide range. The growth of isolated SWCNTs in lithographically defined holes is also demonstrated. This is the first step towards the realization of surrounding gate vertical SWCNT field‐effect transistors (VCNTFET), which are expected to outperform future silicon‐based devices.