Georges Elias

Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

We report a structural study of molecular beam epitaxy-grown lattice-matched GaP/Si(0 0 1) thin layers with an emphasis on the interfacial structural properties, and optical studies of GaAsP(N)/GaP(N) quantum wells coherently grown onto the GaP/Si pseudo substrates, through a complementary set of characterization tools. Room temperature photoluminescence at 780 nm from the (GaAsPN/GaPN) quantum wells grown onto a silicon substrate is reported. Despite this good property, the time-resolved photoluminescence measurements demonstrate a clear influence of non-radiative defects initiated at the GaP/Si interface. It is shown from simulations, how x-ray diffraction can be used efficiently for analysis of antiphase domains. Then, qualitative and quantitative analyses of antiphase domains, micro-twins, and stacking faults are reported using complementarity of the local transmission electron microscopy and the statistical x-ray diffraction approaches.

Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 µm

InAs quantum dot (QD) formation on InP(001) has been investigated by gas source molecular beam epitaxy as a function of the substrate misorientation, arsenic pressure and temperature. A large improvement on quantum dot shape and density was obtained thanks to the use of substrates misoriented toward the [110] direction and low arsine flow rate. Round-shaped small QDs (diameter: 26 nm) in high density (9×1010 QDs/cm2) have been achieved using optimized growth conditions. Room temperature laser emission around 1.55 µm from was obtained with a threshold current density of 1 kA/cm2 for 1 mm long cavity.