Gerard M. Carroll

Mechanistic insights into solar water oxidation by cobalt-phosphate-modified α-Fe2O3 photoanodes

Interfacing α-Fe2O3 photoanodes with the water-oxidation electrocatalyst Co-Pi is known to enhance their photon-to-current conversion efficiencies by reducing electron–hole recombination near their surfaces, particularly at more negative potentials, but the mechanism by which Co-Pi modification achieves this enhancement remains poorly understood. Conflicting experimental observations have been recorded with respect to the role of Co-Pi thickness and even the participation of Co-Pi in catalysis, raising important general questions concerning the fundamental properties of catalyst-modified PEC water-oxidation photoanodes for solar energy conversion. Here, we report results from electrochemical, spectroscopic, and microscopic measurements on mesostructured Co-Pi/α-Fe2O3 composite photoanodes that reveal evolving pathways of water oxidation with increasing Co-Pi thickness. These results highlight major fundamental differences between structured and planar Co-Pi/α-Fe2O3 composite photoanodes and help to reconcile previously conflicting mechanistic interpretations.

Electronic Doping and Redox-Potential Tuning in Colloidal Semiconductor Nanocrystals

Electronic doping is one of the most important experimental capabilities in all of semiconductor research and technology. Through electronic doping, insulating materials can be made conductive, opening doors to the formation of p-n junctions and other workhorses of modern semiconductor electronics. Recent interest in exploiting the unique physical and photophysical properties of colloidal semiconductor nanocrystals for revolutionary new device technologies has stimulated efforts to prepare electronically doped colloidal semiconductor nanocrystals with the same control as available in the corresponding bulk materials. Despite the impact that success in this endeavor would have, the development of general and reliable methods for electronic doping of colloidal semiconductor nanocrystals remains a long-standing challenge. In this Account, we review recent progress in the development and characterization of electronically doped colloidal semiconductor nanocrystals. Several successful methods for introducing excess band-like charge carriers are illustrated and discussed, including photodoping, outer-sphere electron transfer, defect doping, and electrochemical oxidation or reduction. A distinction is made between methods that yield excess band-like carriers at thermal equilibrium and those that inject excess charge carriers under thermal nonequilibrium conditions (steady state). Spectroscopic signatures of such excess carriers, accessible by both equilibrium and nonequilibrium methods, are reviewed and illustrated. A distinction is also proposed between the phenomena of electronic doping and redox-potential shifting. Electronically doped semiconductor nanocrystals possess excess band-like charge carriers at thermal equilibrium, whereas redox-potential shifting affects the potentials at which charge carriers are injected under nonequilibrium conditions, without necessarily introducing band-like charge carriers at equilibrium. Detection of the key spectroscopic signatures of band-like carriers allows distinction between these two regimes. Both electronic doping and redox-potential shifting can be powerful tools for tuning the performance of nanocrystals in electronic devices. Finally, key chemical challenges associated with nanocrystal electronic doping are briefly discussed. These challenges are centered largely on the availability of charge-carrier reservoirs with suitable redox potentials and on the relatively poor control over nanocrystal surface traps. In most cases, the Fermi levels of colloidal nanocrystals are defined by the redox properties of their surface traps. Control over nanocrystal surface chemistries is therefore essential to the development of general and reliable strategies for electronically doping colloidal semiconductor nanocrystals. Overall, recent progress in this area portends exciting future advances in controlling nanocrystal compositions, surface chemistries, redox potentials, and charge states to yield new classes of electronic nanomaterials with attractive physical properties and the potential to stimulate unprecedented new semiconductor technologies.

Kinetic analysis of photoelectrochemical water oxidation by mesostructured Co-Pi/α-Fe2O3 photoanodes

Solar water splitting using catalyst-modified semiconductor photoelectrodes is a promising approach to harvesting and storing solar energy. Prior studies have demonstrated that modification of α-Fe2O3 photoanodes with the water-oxidation electrocatalyst Co-Pi enhances photon-to-current conversion efficiencies, particularly at less positive potentials, but the mechanism underlying this enhancement remains poorly understood. Different experimental techniques have suggested very different interpretations of the microscopic origins of this improvement. Here, we report results from photoelectrochemical and impedance measurements aimed at understanding the Co-Pi/α-Fe2O3 interface of mesostructured composite photoanodes. Contrary to expectations, these measurements reveal that α-Fe2O3 water-oxidation kinetics actually slow upon deposition of Co-Pi, but electron–hole recombination slows even more, resulting in a net enhancement of water-oxidation quantum efficiency. The negative shift in the J–V curve caused by Co-Pi deposition is found to result from the introduction of an alternative pathway for water oxidation catalyzed by Co-Pi, which allows the composite photoanode to avoid positive charge accumulation at the α-Fe2O3 surface. We detail the role of Co-Pi thickness optimization in balancing the slower recombination against the slower water oxidation kinetics to achieve the lowest water-oxidation onset potential. These results provide new insights into the microscopic properties of the catalyst/semiconductor interface in Co-Pi/α-Fe2O3 composite solar water-splitting photoanodes.

Redox Potentials of Colloidal n-Type ZnO Nanocrystals: Effects of Confinement, Electron Density, and Fermi-Level Pinning by Aldehyde Hydrogenation.

Electronically doped colloidal semiconductor nanocrystals offer valuable opportunities to probe the new physical and chemical properties imparted by their excess charge carriers. Photodoping is a powerful approach to introducing and controlling free carrier densities within free-standing colloidal semiconductor nanocrystals. Photoreduced (n-type) colloidal ZnO nanocrystals possessing delocalized conduction-band (CB) electrons can be formed by photochemical oxidation of EtOH. Previous studies of this chemistry have demonstrated photochemical electron accumulation, in some cases reaching as many as >100 electrons per ZnO nanocrystal, but in every case examined to date this chemistry maximizes at a well-defined average electron density of ⟨Nmax⟩ ≈ (1.4 ± 0.4) × 10(20) cm(-3). The origins of this maximum have never been identified. Here, we use a solvated redox indicator for in situ determination of reduced ZnO nanocrystal redox potentials. The Fermi levels of various photodoped ZnO nanocrystals possessing on average just one excess CB electron show quantum-confinement effects, as expected, but are >600 meV lower than those of the same ZnO nanocrystals reduced chemically using Cp*2Co, reflecting important differences between their charge-compensating cations. Upon photochemical electron accumulation, the Fermi levels become independent of nanocrystal volume at ⟨N⟩ above ∼2 × 10(19) cm(-3), and maximize at ⟨Nmax⟩ ≈ (1.6 ± 0.3) × 10(20) cm(-3). This maximum is proposed to arise from Fermi-level pinning by the two-electron/two-proton hydrogenation of acetaldehyde, which reverses the EtOH photooxidation reaction.

Built‐In Potential in Fe2O3‐Cr2O3 Superlattices for Improved Photoexcited Carrier Separation

Hematite (α-Fe2 O3) is engineered to improve photoexcited electron-hole pair separation by synthesizing Fe2O3-Cr2O3 superlattices (SLs) with precise atomic control. The different surface terminations exhibited by Fe2O3 and Cr2O3 determine the hetero-junction interface structure and result in controllable, noncommutative band offset values. This controllable band alignment is harnessed to generate a built-in potential as large as 0.8 eV in Fe2 O3-Cr2O3 SLs.

Potentiometric Measurements of Semiconductor Nanocrystal Redox Potentials

A potentiometric method for measuring redox potentials of colloidal semiconductor nanocrystals (NCs) is described. Fermi levels of colloidal ZnO NCs are measured in situ during photodoping, allowing correlation of NC redox potentials and reduction levels. Excellent agreement is found between electrochemical and optical redox-indicator methods. Potentiometry is also reported for colloidal CdSe NCs, which show more negative conduction-band-edge potentials than in ZnO. This difference is highlighted by spontaneous electron transfer from reduced CdSe NCs to ZnO NCs in solution, with potentiometry providing a measure of the inter-NC electron-transfer driving force. Future applications of NC potentiometry are briefly discussed.

Extremely Slow Spontaneous Electron Trapping in Photodoped n-Type CdSe Nanocrystals

The trapping dynamics of conduction-band electrons in colloidal degenerately doped n-CdSe nanocrystals prepared by photochemical reduction (photodoping) were measured by direct optical methods. The nanocrystals show spontaneous electron trapping with distributed kinetics that extend to remarkably long timescales. Shifts in nanocrystal band-edge potentials caused by quantum confinement and surface ion stoichiometry were also measured by spectroelectrochemical techniques, and their relationship to the slow electron trapping is discussed. The very long electron-trapping timescales observed in these measurements are more consistent with atomic rearrangement than with fundamental electron-transfer processes. Such slow and broadly distributed electron-trapping dynamics are reminiscent of the well-known distributed dynamics of nanocrystal photoluminescence blinking, and potential relationships between the two phenomena are discussed.

Silicon Photoelectrode Thermodynamics and Hydrogen Evolution Kinetics Measured by Intensity-Modulated High-Frequency Resistivity Impedance Spectroscopy

We present an impedance technique based on light intensity-modulated high-frequency resistivity (IMHFR) that provides a new way to elucidate both the thermodynamics and kinetics in complex semiconductor photoelectrodes. We apply IMHFR to probe electrode interfacial energetics on oxide-modified semiconductor surfaces frequently used to improve the stability and efficiency of photoelectrochemical water splitting systems. Combined with current density-voltage measurements, the technique quantifies the overpotential for proton reduction relative to its thermodynamic potential in Si photocathodes coated with three oxides (SiOx, TiO2, and Al2O3) and a Pt catalyst. In pH 7 electrolyte, the flatband potentials of TiO2- and Al2O3-coated Si electrodes are negative relative to samples with native SiOx, indicating that SiOx is a better protective layer against oxidative electrochemical corrosion than ALD-deposited crystalline TiO2 or Al2O3. Adding a Pt catalyst to SiOx/Si minimizes proton reduction overpotential losses but at the expense of a reduction in available energy characterized by a more negative flatband potential relative to catalyst-free SiOx/Si.

Photoconductive ZnO films with embedded quantum dot or ruthenium dye sensitizers

We report a new type of solution-processed photoconductive film based on embedding photosensitizers (semiconductor nanocrystals or ruthenium dye molecules) within conductive ZnO sol-gel matrices. Mixing photosensitizers directly with sol-gel precursors prior to film deposition yields highly colored ZnO films containing well-dispersed sensitizers. These films show internal photoconductivity quantum efficiencies up to ∼50% and photoresponses over 100 mA/W with visible photoexcitation, competitive with other more complex photodetectors reported recently. This simple motif is attractive for the development of robust sensitized-oxide photodetectors and for fundamental studies of photoinduced charge separation from a variety of molecular or quantum dot sensitizers into conductive oxides.