Gerd Duscher

Time-resolved imaging of gas phase nanoparticle synthesis by laser ablation

The dynamics of nanoparticle formation, transport, and deposition by pulsed laser ablation of c-Si into 1–10 Torr He and Ar gases are revealed by imaging laser-induced photoluminescence and Rayleigh-scattered light from gas-suspended 1–10 nm SiOx particles. Two sets of dynamic phenomena are presented for times up to 15 s after KrF-laser ablation. Ablation of Si into heavier Ar results in a uniform, stationary plume of nanoparticles, while Si ablation into lighter He results in a turbulent ring of particles which propagates forward at 10 m/s. Nanoparticles unambiguously formed in the gas phase were collected on transmission electron microscope grids for Z-contrast imaging and electron energy loss spectroscopy analysis. The effects of gas flow on nanoparticle formation, photoluminescence, and collection are described.

Surface plasmon resonance in conducting metal oxides

We report the initial observation of surface plasmon resonance (SPR) in a conducting metal oxide thin film. The SPR phenomenon has been observed by attenuated total reflection of near-infrared radiation and is in agreement with electron energy loss spectroscopy measurements. To date, only metals are known to exhibit surface plasmon resonance and only noble metals have practical application. According to theory SPR should be observable in any conductor. This theoretical prediction is verified in the present study. The compositions of many conducting metal oxides are systematically variable, suggesting a significant advance in thin film characterization and innovative possibilities for versatile and sensitive chemical sensing applications.We report the initial observation of surface plasmon resonance (SPR) in a conducting metal oxide thin film. The SPR phenomenon has been observed by attenuated total reflection of near-infrared radiation and is in agreement with electron energy loss spectroscopy measurements. To date, only metals are known to exhibit surface plasmon resonance and only noble metals have practical application. According to theory SPR should be observable in any conductor. This theoretical prediction is verified in the present study. The compositions of many conducting metal oxides are systematically variable, suggesting a significant advance in thin film characterization and innovative possibilities for versatile and sensitive chemical sensing applications.

Void formation during early stages of passivation: Initial oxidation of iron nanoparticles at room temperature

The examination of nanoparticles allows study of some processes and mechanisms that are not as easily observed for films or other types of studies in which sample preparation artifacts have been the cause of some uncertainties. Microstructure of iron nanoparticles passivated with iron oxide shell was studied using high-resolution transmission electron microscopy and high-angle annular dark-field imaging in aberration-corrected scanning transmission electron microscopy. Voids were readily observed on both small single-crystal α-Fe nanoparticles formed in a sputtering process and the more complex particles created by reduction of an oxide by hydrogen. Although the formation of hollow spheres of nanoparticles has been engineered for Co at higher temperatures [Y. Yin, R. M. Riou, C. K. Erdonmez, S. Hughes, G. A. Somorjari, and A. P. Alivisatos, Science 304, 711 (2004)], they occur for iron at room temperature and provide insight into the initial oxidation processes of iron. There exists a critical size of ∼8n...

Perovskite Solar Cells with Near 100% Internal Quantum Efficiency Based on Large Single Crystalline Grains and Vertical Bulk Heterojunctions

Imperfections in organometal halide perovskite films such as grain boundaries (GBs), defects, and traps detrimentally cause significant nonradiative recombination energy loss and decreased power conversion efficiency (PCE) in solar cells. Here, a simple layer-by-layer fabrication process based on air exposure followed by thermal annealing is reported to grow perovskite films with large, single-crystal grains and vertically oriented GBs. The hole-transport medium Spiro-OMeTAD is then infiltrated into the GBs to form vertically aligned bulk heterojunctions. Due to the space-charge regions in the vicinity of GBs, the nonradiative recombination in GBs is significantly suppressed. The GBs become active carrier collection channels. Thus, the internal quantum efficiencies of the devices approach 100% in the visible spectrum range. The optimized cells yield an average PCE of 16.3 ± 0.9%, comparable to the best solution-processed perovskite devices, establishing them as important alternatives to growing ideal single crystal thin films in the pursuit toward theoretical maximum PCE with industrially realistic processing techniques.

Synthesis of Millimeter-Size Hexagon-Shaped Graphene Single Crystals on Resolidified Copper

We present a facile method to grow millimeter-size, hexagon-shaped, monolayer, single-crystal graphene domains on commercial metal foils. After a brief in situ treatment, namely, melting and subsequent resolidification of copper at atmospheric pressure, a smooth surface is obtained, resulting in the low nucleation density necessary for the growth of large-size single-crystal graphene domains. Comparison with other pretreatment methods reveals the importance of copper surface morphology and the critical role of the melting-resolidification pretreatment. The effect of important growth process parameters is also studied to determine their roles in achieving low nucleation density. Insight into the growth mechanism has thus been gained. Raman spectroscopy and selected area electron diffraction confirm that the synthesized millimeter-size graphene domains are high-quality monolayer single crystals with zigzag edge terminations.

Transition layers at the SiO2/SiC interface

The electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2∕SiC interface during processing. We analyzed the structure and chemistry of this interface for the thermally grown SiO2∕4H-SiC heterostructure using high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, and spatially resolved electron energy-loss spectroscopy. The analyses revealed the presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiC surface was observed. These interfacial layers were attributed to the formation of a ternary Si–C–O phase during thermal oxidation.

Universal Formation of Compositionally Graded Bulk Heterojunction for Efficiency Enhancement in Organic Photovoltaics

A universal method is reported to form graded bulk heterojunction (BHJ) organic photovoltaic devices (OPVs) by a simple solvent-fluxing process. Donors are enriched at the anode and acceptors are enriched at cathode side, matching the gradient electron and hole current across the film. Efficiency enhancements by 15-50% are achieved for all BHJ systems tested compared with the optimized regular BHJ OPVs.

Photoluminescence from gas-suspended SiOx nanoparticles synthesized by laser ablation

Time-resolved photoluminescence (PL) spectra are reported for gas-suspended 1–10 nm diameter SiOx particles formed by laser ablation of Si into 1–10 Torr He and Ar. Three spectral bands (1.8, 2.5 and 3.2 eV) similar to PL from oxidized porous silicon were measured, but with a pronounced vibronic structure. Particle size and composition were determined with Z-contrast transmission electron microscopy imaging and high resolution electron energy loss spectroscopy linescans of individual nanoparticles. Maximized violet (3.2 eV) PL from the gas-suspended nanoparticles was correlated with an ex situ SiO1.4 overall particle stoichiometry. Cryogenically-collected gas-suspended nanoparticles produced web-like-aggregate films exhibiting very weak PL. Standard anneals restored strong PL bands without vibronic structure, but otherwise in agreement with the PL measured from the gas-suspended nanoparticles.

The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO3

An experimental atomic resolution analysis of an undoped Σ5 36° [001] tilt grain boundary in SrTiO3 shows that the structure contains incomplete oxygen octahedra. These incomplete octahedra act as effective oxygen vacancies and lead to a fixed, positive boundary charge. Annealing the boundary in the presence of MnO2 does not change the atomic structure of the boundary plane, and results in a high concentration of Mn3+ (acceptor) enrichment at the specific Ti4+ locations in closest proximity to the effective oxygen vacancies. This result can be explained in terms of standard charge compensation models and indicates that the formation of electrical barriers at oxide grain boundaries may be influenced by the atomic structure of the boundary plane.

Atomic Column Resolved Electron Energy‐Loss Spectroscopy

Spatially resolved electron energy-loss spectroscopy (EELS) is rapidly developing into a unique and powerful tool to characterize internal interfaces. Because atomic column resolved Z-contrast imaging can be performed simultaneously with EELS in the scanning transmission electron microscope, this combination allows the atomic structure to be correlated with the electronic structure, and thus the local properties of interfaces or defects can be determined directly. However, the ability to characterize interfaces and defects at that level requires not only high spatial resolution but also the exact knowledge of the beam location, from where the spectrum is obtained. Here we discuss several examples progressing from cases where the limitation in spatial resolution is given by the microscopes or the nature of the sample, to one example of impurity atoms at a grain boundary, which show intensity and fine structure changes from atomic column to atomic column. Such data can be interpreted as changes in valence of the impurity, depending on its exact site in the boundary plane. Analysis of this nature is a valuable first step in understanding the macroscopic structural, optical and electronic properties of materials.