Gerhard G. Fischer

A 0.13

A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T</inf>=240 GHz, f<inf>max</inf>=330 GHz, BV<inf>CEO</inf>=1.7 V) along with high-voltage HBTs (f<inf>T</inf>=50 GHz, f<inf>max</inf>=130 GHz, BV<inf>CEO</inf>=3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.

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We investigate a novel implementation of junction isolation to harden a 200 GHz SiGe:C HBT technology without deep trench isolation against single event effects. The inclusion of isolation is shown to have no effect on the dc or ac performance of the nominal device, and likewise does not reduce the HBTs inherent tolerance to TID radiation exposure on the order of a Mrad. A 69% reduction in total integrated charge collection across a slice through the center of the device was achieved. In addition, a 26% reduction in collected charge is reported for strikes to the center of the emitter. 3-D NanoTCAD simulations are performed on RHBD and control device models yielding a good match to measured results for strikes from the emitter center to 8 ¿m away. This result represents one of the most effective transistor layout-level RHBD approaches demonstrated to date in SiGe.

SiGe BiCMOS Technology Featuring f

A fully integrated fully differential low-noise amplifier for 79 GHz short range radar applications using a highspeed SiGe:C BiCMOS technology is presented. The integrated circuit uses thin-film microstrip lines and exhibits compact design (530 times 690 mum2), low power consumption (90 mW at 3 V supply voltage), high gain (13 dB gain at 81 GHz), good linearity and reverse isolation. In order to ease the measurements of the circuit, a simple technique was used to measure single-ended the differential amplifier. To overcome possible inaccuracy of the line model, shorting bars are placed along these elements to allow easy correction and to avoid redesign.

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The factors determining the temperature stability of a 77 GHz voltage controlled oscillator (VCO) and reliability issues of the SiGe:C hetero bipolar transistors (HBT) used in the VCO are studied. The VCO with output buffer and NMOS varactors shows an output power of +14.6 dBm at 77 GHz. In the temperature range up to 125degC we get a low oscillation frequency shift Deltafosc = -1.2 GHz/100 K. Although the HBTs used for the VCO show significant base current degradation during high and low temperature stress, their rf and low-frequency noise behavior, relevant for VCO reliability, is not affected.

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A Si/SiGe bipolar dynamic frequency divider designed for 77GHz/79GHz automotive radar is presented, which uses a transimpedance amplifier topology to improve sensitivity and operational bandwidth. Capable of operation for input frequencies from 22 GHz up to 93 GHz, the divider consumes only 35 mA at 5 V supply voltage and has a very compact die area of 295 x 475 mum2. In addition, measurements show that the divider operates in the full radar frequency band (76 GHz-81 GHz) up to a temperature of 100degC.

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In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79 GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique and an efficient DC filtering network were used. The amplifier shows a maximum measured gain of 13.2 dB at exactly 79 GHz and an excellent reverse isolation of more than 40 dB over the whole measured frequency range. Its performance was measured at different temperatures, showing a decrease of 5.3 dB in gain between room temperature and 85degC. The measured -1 dB input compression point is at -15 dBm. The power consumption is 52 mW at a supply voltage of 2.7 V. The circuit has a compact layout and consumes an area of 525 times 500 mum2 including bonding pads.

of 240/330 GHz and Gate Delays Below 3 ps

The influence of hydrostatic pressure on the relaxation behavior of pseudomorphic Si1-xGex samples were treated under high hydrostatic pressures at room temperature as well as at high temperature (900 degrees C and 950 degrees C). Annealing under high pressure causes both a strong increase of relaxation and a strong enhancement of the Ge-Si-interdiffusion with increasing pressure relative to annealing experiments under atmospheric conditions. The activation volume of the Ge/Si interdiffusion process is estimated.