Gianni Puccio

A fully integrated zero-IF transceiver for GSM-GPRS quad band application

A GPRS GSM850/GSM/DCS/PCS fully integrated transceiver occupies 14mm/sup 2/ in 0.35/spl mu/m SiGe technology. A direct conversion receiver, transmitter, synthesizer, VCO, voltage regulators and loop filters are fully integrated. The chip meets the GPRS specifications including settling time of 105/spl mu/s in RX mode, NF of 3dB for GSM, TX phase error of 2/spl deg/ RMS, and PLL phase noise of -84dBc/Hz at a 1kHz offset at 3.6GHz.

Fully integrated, high performance triple SD PLL (2.2Ghz to 4.4Ghz) with minimized interaction

3 Sigma delta PLLs covering an octave have been integrated on one BiCMOS 0.35 um CSS (channel stacking switch) chip. The 3 PLLs can work simultaneously synthesizing the same frequencies or different frequencies. To minimize the dynamic coupling among the PLLs a complete calibration algorithm has been implemented while to avoid static coupling a large use of differential structure and other design techniques have been used. The maximum composite spurious (due to PLLs coupling, Xtal spurious and fractional spurs) is -35 dBc (in +/-15 MHz range). Each PLL has a frequency range from 2.2 GHz to 4.4 GHz with a worst-case (over process and temperature) integrated rms of 1.2 deg at 3.8 GHz. The frequency step (31.25 KHz) is obtained with a 10 bit SD clocked at 32 MHz. The single PLL draw 35 mA from 3.8 Volt supply (regulated internally to 2.8 or 3.4 Volt) for 3.2 mm2.

Gain/bandwidth programmable PA control loop for GMS/GPRS quad-band applications

The analog power amplifier (PA) control loop of a fully-integrated GSM/GPRS quad band transceiver by Duvivier et al. (2003) is presented. The control loop is based on a fully-integrated PA controller which meets all GSM/GPRS specifications. Both the gain and the bandwidth of the PA control loop are programmable as well as the stand-by voltage delivered to the PA. These features, together with a high driving capability (8.4 mA @ 2.5 V), make this solution capable to interface vast combinations of PAs, couplers and detectors. The proposed PA controller has been integrated in a BiCMOS SiGe 0.35 /spl mu/m process and measures 0.33 mm/sub 2/. The current consumption is 2.8 mA without load and 7.2 mA in the application (using Hitachi PF08109B PA) from a single 2.8 V power supply.