Gregory R. Allen

Single-Event Characterization of the 20 nm Xilinx Kintex UltraScale Field-Programmable Gate Array under Heavy Ion Irradiation

This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing.This study examines the single-event response of the Xilinx 20 nm Kintex UltraScale Field-Programmable Gate Array irradiated with heavy ions. Results for single-event latch-up and single-event upset on configuration SRAM cells and Block RAM memories are provided.

Static Upset Characteristics of the 90nm Virtex-4QV FPGAs

Radiation Test Consortium (XRTC) single-event measurements for three of the latest generation of radiation-tolerant reconfigurable FPGAs from Xilinx (90 nm, copper- interconnected, thin-epitaxial CMOS) are presented. Results include proton and heavy-ion upset susceptibilities for unclocked memory elements, high-temperature latchup immunity and a low SEFI rate (e.g., ~one/device-century in geosynchronous orbit).

Single-Event Upset (SEU) Results of Embedded Error Detect and Correct Enabled Block Random Access Memory (Block RAM) Within the Xilinx XQR5VFX130

Recent heavy ion measurements of the single-event upset (SEU) cross section for 65 nm embedded block random access memory (Block RAM) are presented. Results of initial investigation into the on-chip Error Detection and Correction (EDAC) are also discussed.

SEU-Susceptibility of Logical Constants in Xilinx FPGA Designs

In Xilinx Field Programmable Gate Arrays two types of logical constants, implicit and explicit, are used to prevent unspecified signals from floating. Implicit logical constants are implemented with a weak keeper circuit, called a half latch, and are used to tie off unspecified input signals to user flip-flops. Explicit logical constants in the earlier devices are implemented using look up tables (LUTs) set to a constant value (constant LUTs) and in the newer devices are implemented using posts that provide access to the ground plane. Explicit logical constants often are used in adders and multipliers. In this paper, we will present radiation test data and analysis of the three types of logical constants.

Complex upset mitigation applied to a Re-configurable embedded processor

Soft-core processors implemented in static random access memory-based field-programmable-gate-arrays, while attractive to spacecraft designers, require upset mitigation. We investigate a proposed solution involving two levels of scrubbing plus triple modular redundancy and measure its in-beam performance.

Compendium of Test Results of Single Event Effects Conducted by the Jet Propulsion Laboratory

This paper reports heavy ion and proton induced single event effects results for a variety of microelectronic devices targeted for possible use in NASA spacecrafts. The compendium covers a sampling of devices tested over the past eight years.

Recent Single Event Effects Results in Advanced Reconfigurable Field Programmable Gate Arrays

Radiation results from modern SRAM-based reconfigurable FPGAs are presented. The 65nm Xilinx Mil/Aero Virtex-5, SiliconBlue iCE65, and 40nm Altera Stratix-IV are evaluated for SEE.

Heavy Ion, Proton and Electron Single-Event Effect Measurements of a Commercial Samsung NAND Flash Memory

Heavy ion, proton and electron single-event effect measurements of 8Gb Samsung single level NAND flash memory are reported. An increase in the heavy ion single bit upset (SBU) cross section was observed on devices that were irradiated with 60Co previously. The proton susceptibility is less than expected. No electron induced upsets were observed.

Heavy Ion Induced Single-Event Latchup Screening of Integrated Circuits Using Commercial Off-the-Shelf Evaluation Boards

We present heavy ion single-event latchup (SEL) screening data for a variety of commercial-off-the-shelf (COTS) devices intended for use on low-cost missions, and discuss the device preparation techniques used to expose the die for ground-based heavy-ion testing.

Measurements of Proton Displacement Damage in Several Commercial Optocouplers

Proton Displacement Damage (DD) measurements on Isolink OLS049, Micropac 66296-101, 66224-103JANTX, and 66179-003 are reported. The 66179-003 has the worst degradation, 13% of the initial CTR remains when it is used with IF = 10 mA at 1 x 1012 1-MeV n/cm2 fluence in Silicon. The remaining CTR percentage for OLS049, 66296-101, and 66224-103JANTX are 21%, 32%, and 79% at 2 x 1012 1-MeV n/cm2 fluence in Silicon, respectively.