J. George

SEU mitigation testing of Xilinx Virtex II FPGAs

SRAM-based reconfigurable programmable logic is widely used in commercial applications and occasionally used in space flight applications because of susceptibility to single-event upset (SEU). Upset detection and mitigation schemes have been tested on the Xilinx Virtex II X-2V1000 in heavy-ion and proton irradiation to control the accumulation of SEUs and to mitigate their effects on the intended operation. Non-intrusive upset detection and partial reconfiguration in combination with TMR can repair the design to maintain state information. In-beam results on a simple test design demonstrate the effectiveness of these methods when used together.

Comparison of Xilinx Virtex-II FPGA SEE sensitivities to protons and heavy ions

A comparison of heavy-ion and proton-induced single event effect sensitivities has been made using the Xilinx Virtex-II field programmable gate array (FPGA). Recently fabricated test samples are selected for observations of single event upset and single event functional interrupt. A complex relationship appears to exist between the heavy ion and proton sensitivities due to effects such as multiple-bit upsets and elastic nuclear scattering.

Dynamic testing of Xilinx Virtex-II field programmable gate array (FPGA) input/output blocks (IOBs)

Heavy-ion irradiation and fault injection experiments were conducted to evaluate the upset sensitivity of the Xilinx Virtex-II field programmable gate arrays (FPGAs) input/output block (IOB). Full triple module redundancy (TMR) of the IOBs, in combination with regular configuration scrubbing, proved to be a quite effective upset mitigation method.

Single Event Upsets in Xilinx Virtex-4 FPGA Devices

We present single event upset sensitivities for three Xilinx Virtex-4 field-programmable-gate-array (FPGA) devices in protons and heavy ions. Upsets are identified in each functional block and results compared with previous device generations

SEE sensitivities of selected advanced flash and first-in-first-out memories

Single event effects sensitivity measurements of advanced flash and first-in-first-out memories have been made. While many upsets are transients, other upsets initiated by high LET ions are semi-permanent.

Single-Event Characterization of the 20 nm Xilinx Kintex UltraScale Field-Programmable Gate Array under Heavy Ion Irradiation

This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing.This study examines the single-event response of the Xilinx 20 nm Kintex UltraScale Field-Programmable Gate Array irradiated with heavy ions. Results for single-event latch-up and single-event upset on configuration SRAM cells and Block RAM memories are provided.

Static Upset Characteristics of the 90nm Virtex-4QV FPGAs

Radiation Test Consortium (XRTC) single-event measurements for three of the latest generation of radiation-tolerant reconfigurable FPGAs from Xilinx (90 nm, copper- interconnected, thin-epitaxial CMOS) are presented. Results include proton and heavy-ion upset susceptibilities for unclocked memory elements, high-temperature latchup immunity and a low SEFI rate (e.g., ~one/device-century in geosynchronous orbit).

Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

We present single event effect (SEE) and total ionizing dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer

Proton and Heavy Ion Induced Semi-Permanent Upsets in Double Data Rate SDRAMs

Semi-permanent upset sensitivity in DDR SDRAMs is investigated. A technique to reduce sensitivity is examined. The reduction extends to high LET regions for some heavy ion induced upsets.

SEE sensitivity trends in non-hardened high density SRAMs with sub-micron feature sizes

We report on single event upsets (SEU) and single event latchup (SEL) sensitivities under irradiation by protons and heavy ions for a variety of non-hardened high density static random access memories (SRAMs) with sub-micron feature sizes. The results are compared with previously measured sensitivities for similar devices with larger features. We discuss the sensitivity trends with temperature and examine other effects such as stuck bits.