Grzegorz Wielgoszewski

A high-resolution measurement system for novel scanning thermal microscopy resistive nanoprobes

In this paper, a scanning thermal microscopy (SThM) module with a modified Wheatstone bridge is presented. It is intended to be used with a novel four-terminal thermoresistive nanoprobe, which was designed for performing thermal measurements in standard static-mode atomic force microscopes. The modified Wheatstone bridge architecture is also compared to a Wheatstone bridge and a Thomson bridge in terms of their temperature measurement sensitivities. In fixed conditions, they are found to be (7.05 ± 0.04) μV K−1 for the modified Wheatstone, while (5.43 ± 0.06) μV K−1 for the Wheatstone and (0.91 ± 0.09) μV K−1 for the Thomson bridge. The usability of the three set-ups with four-terminal nanoprobes is also discussed. The design of devices included in the module is presented and the noise level of the modified Wheatstone bridge is estimated. A proportional–integral–derivative controller for active-mode SThM is also introduced.

Microfabricated resistive high-sensitivity nanoprobe for scanning thermal microscopy

In this article, a novel microfabricated thermoresistive scanning thermal microscopy probe is presented. It is a V-shaped silicon nitride cantilever with platinum lines and a sharp off-plane nanotip. The cantilever fabrication sequence incorporates standard complementary metal oxide semiconductor technology processes and therefore provides high reproducibility, while the tip is additionally processed by focused ion beam, enabling high-sensitivity and high-resolution thermal sensing. The nanoprobe is designed for scanning thermal microscopes, operating in standard atomic force microscope setup with an optical detection system. The measurement setup, which is also presented, takes advantage of the four-point design of the probe by inclusion of a Thomson bridge and a modified Wheatstone bridge measurement electronics.In this article, a novel microfabricated thermoresistive scanning thermal microscopy probe is presented. It is a V-shaped silicon nitride cantilever with platinum lines and a sharp off-plane nanotip. The cantilever fabrication sequence incorporates standard complementary metal oxide semiconductor technology processes and therefore provides high reproducibility, while the tip is additionally processed by focused ion beam, enabling high-sensitivity and high-resolution thermal sensing. The nanoprobe is designed for scanning thermal microscopes, operating in standard atomic force microscope setup with an optical detection system. The measurement setup, which is also presented, takes advantage of the four-point design of the probe by inclusion of a Thomson bridge and a modified Wheatstone bridge measurement electronics.

Scanning probe microscopy investigations of the electrical properties of chemical vapor deposited graphene grown on a 6H-SiC substrate

Sublimated graphene grown on SiC is an attractive material for scientific investigations. Nevertheless the self limiting process on the Si face and its sensitivity to the surface quality of the SiC substrates may be unfavourable for later microelectronic processes. On the other hand, chemical vapor deposited (CVD) graphene does not posses such disadvantages, so further experimental investigation is needed. In this paper CVD grown graphene on 6H-SiC (0001) substrate was investigated using scanning probe microscopy (SPM). Electrical properties of graphene were characterized with the use of: scanning tunnelling microscopy, conductive atomic force microscopy (C-AFM) with locally performed C-AFM current-voltage measurements and Kelvin probe force microscopy (KPFM). Based on the contact potential difference data from the KPFM measurements, the work function of graphene was estimated. We observed conductance variations not only on structural edges, existing surface corrugations or accidental bilayers, but also on a flat graphene surface.

Investigation of thermal effects in through-silicon vias using scanning thermal microscopy.

Results of quantitative investigations of copper through-silicon vias (TSVs) are presented. The experiments were performed using scanning thermal microscopy (SThM), enabling highly localized imaging of thermal contrast between the copper TSVs and the surrounding material. Both dc and ac active-mode SThM was used and differences between these variants are shown. SThM investigations of TSVs may provide information on copper quality in TSV, as well as may lead to quantitative investigation of thermal boundaries in micro- and nanoelectronic structures. A proposal for heat flow analysis in a TSV, which includes the influence of the boundary region between the TSV and the silicon substrate, is presented; estimation of contact resistance and boundary thermal conductance is also given.

Thermal mapping of a scanning thermal microscopy tip.

Scanning thermal microscopy (SThM) is a very promising technique for local investigation of temperature and thermal properties of nanostructures with great application potential in contemporary nanoelectronics and nanotechnology. In order to increase the localization of SThM measurements, the size of probes has recently substantially decreased, which results in novel types of SThM probes manufactured with the use of modern silicon microfabrication technology. Quantitative SThM measurements with these probes need methods, which enable to assess the quality of thermal contact between the probe and the investigated surface. In this paper we propose a tip thermal mapping (TThM) procedure, which is used to estimate experimentally the distribution of power dissipated by the tip of an SThM probe. We also show that the proposed power dissipation model explains the results of active-mode SThM measurements and that the TThM procedure is reversible for a given probe and sample.

Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy

The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution. Both techniques are therefore suitable for imaging the resistance distribution. We show results of experimental examination of dual channel n-type SiNWs with channel width of 100 nm, while the channel was open and current was flowing through the SiNW. To investigate the carrier distribution in the SiNWs we performed SThM and KPFM scans. The SThM results showed non-symmetrical temperature distribution along the SiNWs with temperature maximum shifted towards the contact of higher potential. These results corresponded to those expressed by the distribution of potential gradient along the SiNWs, obtained using the KPFM method. Consequently, non-uniform distribution of resistance was shown, being a result of non-uniform carrier density distribution in the structure and showing the pinch-off effect. Last but not least, the results were also compared with results of finite-element method modeling.

Silicon nanowires reliability and robustness investigation using AFM-based techniques

Silicon nanowires (SiNWs) have undergone intensive research for their application in novel integrated systems such as field effect transistor (FET) biosensors and mass sensing resonators profiting from large surface-to-volume ratios (nano dimensions). Such devices have been shown to have the potential for outstanding performances in terms of high sensitivity, selectivity through surface modification and unprecedented structural characteristics. This paper presents the results of mechanical characterization done for various types of suspended SiNWs arranged in a 3D array. The characterization has been performed using techniques based on atomic force microscopy (AFM). This investigation is a necessary prerequisite for the reliable and robust design of any biosensing system. This paper also describes the applied investigation methodology and reports measurement results aggregated during series of AFM-based tests.

Methods of investigation of the properties of the optoelectronic devices with use of atomic force microscopy

In the modern world, the influence the optoelectronic devices on the communications methods are still increasing. Therefore it is very important to find appropriate techniques for design, building, testing, measuring and packaging.