H. Aoki

Fermi surface property of UPt3 studied by de Haas–van Alphen and magnetoresistance experiments

Abstract We have performed the de Haas–van Alphen (dHvA) and the magnetoresistance experiments in UPt3. The result of the magnetoresistance is consistent with the topology of the Fermi surface predicted from the 5f-itinerant band theory. The main Fermi surfaces detected by the dHvA are also well explained by the 5f-itinerant band model, although the cyclotron effective masses with 15–105m0 are 10–20 times larger than the corresponding band masses.

4f-derived Fermi surfaces of CeRu2(Si1-xGex)2 near the quantum critical point: resonant soft-X-ray ARPES study.

Angle-resolved photoelectron spectroscopy in the Ce 3d-->4f excitation region was measured for the paramagnetic state of CeRu2Si2, CeRu2(Si0.82Ge0.18)2, and LaRu2Si2 to investigate the changes of the 4f electron Fermi surfaces around the quantum critical point. While the difference of the Fermi surfaces between CeRu2Si2 and LaRu2Si2 was experimentally confirmed, a strong 4f-electron character was observed in the band structures and the Fermi surfaces of CeRu2Si2 and CeRu2(Si0.82Ge0.18)2, consequently indicating a delocalized nature of the 4f electrons in both compounds. The absence of Fermi surface reconstruction across the critical composition suggests that SDW quantum criticality is more appropriate than local quantum criticality in CeRu2(Si1-xGex)2.

Fermi surfaces of LaRhSi3 and CeRhSi3

CeRhSi 3 has the large electronic specific-heat coefficient γ = 120 mJ/mol K 2 and the high Kondo temperature T K ∼ 100 K, although its magnetic susceptibility follows the Curie-Weiss law and the specific heat indicates magnetic ordering at 1.8 K. In order to elucidate the 4f-electron nature in CeRhSi 3 , we have grown single crystals of CeRhSi 3 and of its reference material LaRhSi 3 and measured the electrical resistivity, the magnetic susceptibility and the de Haas-van Alphen (dHvA) effect. Comparison of the angular dependence of the dHvA frequency in CeRhSi 3 to that in LaRhSi 3 , indicates that the 4f-electrons of CeRhSi 3 are itinerant.

Magnetic phase diagram and the pressure and field dependence of the Fermi surface in UGe 2

The ac susceptibility and de Haas\char21{}van Alphen (dHvA) effect in

Bulk quantum Hall effect in {eta}-Mo{sub 4}O{sub 11}

{\mathrm{UGe}}_{2}

De Haas-van Alphen effect study of CeRu2Si2

are measured at pressures P up to 17.7 kbar for the magnetic field B parallel to the a axis, which is the easy axis of magnetization. Two anomalies are observed at

Fermi surface study of PrCu2, CeRu2Si2, CeRu2 and UPt3

{B}_{x}(P)

Reexamination of angle dependent magnetoresistance oscillationin θ-(BEDT-TTF)2I3

and

De Haas-van Alphen studies of rare earth compounds

{B}_{m}(P)