H.P.M.M. Ambrosius

An introduction to InP-based generic integration technology

Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets. Recently, a novel approach in photonic integration is emerging which will reduce the R&D and prototyping costs and the throughput time of PICs by more than an order of magnitude. It will bring the application of PICs that integrate complex and advanced photonic functionality on a single chip within reach for a large number of small and larger companies and initiate a breakthrough in the application of Photonic ICs. The paper explains the concept of generic photonic integration technology using the technology developed by the COBRA research institute of TU Eindhoven as an example, and it describes the current status and prospects of generic InP-based integration technology.

A High-

The design, fabrication, and optical characterization of the sensing element of a photonic InP-based gyroscope intended for applications in the field of aerospace and defense are reported in this paper. The sensing element is a spiral resonator coupled to a straight bus waveguide through a multimode interference coupler and exhibits a Q factor of approximately 600 000 with a footprint of approximately 10 mm 2. The design of each component of the sensor is based on some well-established numerical methods such as the Finite Element Method, the beam propagation method, and the film mode matching method. The spiral cavity was designed using the standard transfer matrix method. The selected fabrication process, which is an enhanced version of the standard COBRA process, allows the monolithic integration of the sensing element with the other active components of the gyroscope, e.g., lasers, photodiodes, and modulators. Each component of the fabricated sensing element was optically characterized using an appropriate setup, which was also used for the optical characterization of the whole sensor. Based on the results of the characterization, the gyro performance was evaluated, and a way to improve both the resolution and the bias drift, i.e., down to 10°/h and 1°/h, respectively, was also clearly identified. The achieved results demonstrate, for the first time, the actual feasibility of a photonic gyro-on-chip through a well-established InP-based generic integration process.

Q

We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20 GHz repetition rate and around 1575 nm wavelength. The device has been realized using the active-passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.

InP Resonant Angular Velocity Sensor for a Monolithically Integrated Optical Gyroscope

An ultrasmall (<10  μm length) polarization converter in InP membrane is fabricated and characterized. The device relies on the beating between the two eigenmodes of chemically etched triangular waveguides. Measurements show a very high polarization conversion efficiency of >99% with insertion losses of <-1.2  dB at a wavelength of 1.53 μm. Furthermore, our design is found to be broadband and tolerant to dimension variations.

Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers

Two-dimensional optical beam steering using an InP photonic integrated circuit has been demonstrated. Lateral beam steering controlled by a 1-D phased array has been made easier through on-chip interferometer monitors. Longitudinal beam steering controlled by the input wavelength has demonstrated an efficiency of 0.14 °/nm. Very fast beam steering (>107 °/s) in both dimensions has been demonstrated as well. As the latest development, a widely tunable sampled-grating distributed Bragg reflector laser has been monolithically integrated and 2-D beam steering has been demonstrated with this on-chip tunable laser source.

High-efficiency ultrasmall polarization converter in InP membrane

Generic InP foundry processes allow monolithic integration of active and passive elements into a common p-n doped layerstack. The passive loss can be greatly reduced by restricting the p-dopant to active regions. We report on a localized Zn-diffusion process based on MOVPE, which allows to reduce waveguide loss from 2 dB/cm to below 0.4 dB/cm. We confirm this value by fabrication of a 73 mm long spiral ring resonator, with a record quality factor of 1.2 million and an extinction ratio of 9.7 dB.

Two-Dimensional Optical Beam Steering With InP-Based Photonic Integrated Circuits

InP photonic integrated circuit for 2D (5°×10°) optical beam steering has been demonstrated for the first time. Design, fabrication, and preliminary results are presented.

Low-loss passive waveguides in a generic InP foundry process via local diffusion of zinc

We present the development of Ag/Ge based ohmic contacts to n-type InP with both low contact resistances and relatively low optical losses. A specific contact resistance as low as 1.5×10−6 Ω cm2 is achieved by optimizing the Ge layer thickness and annealing conditions. The use of Ge instead of metal as the first deposited layer results in a low optical absorption loss in the telecommunication wavelength range. Compared to Au based contacts, the Ag based metallization also shows considerably reduced spiking effects after annealing. Contacts with different lengths are deposited on top of InP membrane waveguides to characterize the optical loss before and after annealing. A factor of 5 reduction of the propagation loss compared to the conventional Au/Ge/Ni contact is demonstrated. This allows for much more optimized designs for membrane photonic devices.

InP photonic integrated circuit for 2D optical beam steering

We present a widely tunable extended cavity ring laser operating at 2 μm that is monolithically integrated on an indium phosphide substrate. The photonic integrated circuit is designed and fabricated within a multiproject wafer run using a generic integration technology platform. The laser features an intracavity tuning mechanism based on nested asymmetric Mach–Zehnder interferometers with voltage controlled electro-refractive modulators. The laser operates in a single-mode regime and is tunable over the recorded wavelength range of 31 nm, spanning from 2011 to 2042 nm. Its capability for high-resolution scanning is demonstrated in a single-line spectroscopy experiment using a carbon dioxide reference cell.

Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices

Optical beam steering through an InP photonic integrated circuit has been improved in term of side-lobe suppression (13dB from -14° to 14° around the peak) and steering angle (10° by 28nm wavelength tuning).