Han Yun

Narrow-band waveguide Bragg gratings on SOI wafers with CMOS-compatible fabrication process.

We demonstrate the design, fabrication and measurement of integrated Bragg gratings in a compact single-mode silicon-on-insulator ridge waveguide. The gratings are realized by corrugating the sidewalls of the waveguide, either on the ridge or on the slab. The coupling coefficient is varied by changing the corrugation width which allows precise control of the bandwidth and has a high fabrication tolerance. The grating devices are fabricated using a CMOS-compatible process with 193 nm deep ultraviolet lithography. Spectral measurements show bandwidths as narrow as 0.4 nm, which are promising for on-chip applications that require narrow bandwidths such as WDM channel filters. We also present the die-to-die nonuniformity for the grating devices on the wafer, and our analysis shows that the Bragg wavelength deviation is mainly caused by the wafer thickness variation.

Focusing sub-wavelength grating couplers with low back reflections for rapid prototyping of silicon photonic circuits

We demonstrate fully-etched fiber-waveguide grating couplers with sub-wavelength gratings showing high coupling efficiency as well as low back reflections for both transverse electric (TE) and transverse magnetic (TM) modes. The power reflection coefficients for the TE and TM modes have been significantly suppressed to -16.2 dB and -20.8 dB, respectively. Focusing grating lines have also been used to reduce the footprint of the design. Our sub-wavelength grating couplers for the TE and TM modes show respective measured insertion losses of 4.1 dB and 3.7 dB with 1-dB bandwidths of 30.6 nm (3-dB bandwidth of 52.3 nm) and 47.5 nm (3-dB bandwidth of 81.5 nm), respectively.

Silicon photonic grating-assisted, contra-directional couplers.

We demonstrate, in both theory and experiment, 4-port, electrically tunable photonic filters using silicon contra-directional couplers (contra-DCs) with uniform and phase-shifted waveguide Bragg gratings. Numerical analysis, including both intra- and inter-waveguide couplings, is performed using coupled-mode theory and the transfer-matrix method. The contra-DC devices were fabricated by a CMOS-photonics manufacturing foundry and are electrically tunable using free-carrier injection. A 4-port, grating-based photonic resonator has been obtained using the phase-shifted contra-DC, showing a resonant peak with a 3-dB bandwidth of 0.2 nm and an extinction ratio of 24 dB. These contra-DC devices enable on-chip integration of Bragg-grating-defined functions without using circulators and have great potential for applications such as wavelength-division multiplexing networks and optical signal processing.

Ultra-compact, flat-top demultiplexer using anti-reflection contra-directional couplers for CWDM networks on silicon

Wavelength-division-multiplexing (WDM) networks with wide channel grids and bandwidths are promising for low-cost, low-power optical interconnects. Wide-bandwidth, single-band (i.e., no free-spectral range) add-drop filters have been developed on silicon using anti-reflection contra-directional couplers with out-of-phase Bragg gratings. Using such filter components, we demonstrate a 4-channel, coarse-WDM demultiplexer with flat passbands of up to 13 nm and an ultra-compact size of 1.2 × 10(-3) mm(2).

Broadband silicon photonic directional coupler using asymmetric-waveguide based phase control.

We design and demonstrate broadband directional couplers that use asymmetric-waveguide based phase control sections, on the silicon-on-insulator platform. Broadband directional couplers with various power splitting ratios, including 10%/90%, 20%/80%, 30%/70%, 40%/60% and 50%/50%, were realized for both transverse electric (TE) and transverse magnetic (TM) modes. Some of the devices exhitbit bandwidths in excess of 100 nm, and all in excess of 75 nm. The footprints of the TE mode couplers are 32 μm ×1.3 μm, or less, and those of the TM mode couplers are 13 μm ×1.3 μm, or less.

2×2 adiabatic 3-dB coupler on silicon-on-insulator rib waveguides

We demonstrated 2×2 broadband adiabatic 3-dB couplers based on silicon rib waveguides. Functioning as 50/50 optical power splitters, these devices can be used in optoelectronic applications. Fabricated using siliconon-insulator technology, we demonstrated the performance of the adiabatic 3-dB couplers by integrating two couplers into an unbalanced Mach-Zehnder Interferometer (MZI). Measurements of the MZI were made over a 100 nm wavelength range. Extinction ratios in excess of 33.4 dB were obtained over the wavelength range from 1520 nm to 1600 nm, for light injected into Input Port1 and measured at Output Port2, i.e., the cross port response.

Silicon photonic resonator sensors and devices

Silicon photonic resonators, implemented using silicon-on-insulator substrates, are promising for numerous applications. The most commonly studied resonators are ring/racetrack resonators. We have fabricated these and other resonators including disk resonators, waveguide-grating resonators, ring resonator reflectors, contra-directional grating-coupler ring resonators, and racetrack-based multiplexer/demultiplexers. While numerous resonators have been demonstrated for sensing purposes, it remains unclear as to which structures provide the highest sensitivity and best limit of detection; for example, disc resonators and slot-waveguide-based ring resonators have been conjectured to provide an improved limit of detection. Here, we compare various resonators in terms of sensor metrics for label-free bio-sensing in a micro-fluidic environment. We have integrated resonator arrays with PDMS micro-fluidics for real-time detection of biomolecules in experiments such as antigen-antibody binding reaction experiments using Human Factor IX proteins. Numerous resonators are fabricated on the same wafer and experimentally compared. We identify that, while evanescent-field sensors all operate on the principle that the analytes refractive index shifts the resonant frequency, there are important differences between implementations that lie in the relationship between the optical field overlap with the analyte and the relative contributions of the various loss mechanisms. The chips were fabricated in the context of the CMC-UBC Silicon Nanophotonics Fabrication course and workshop. This yearlong, design-based, graduate training program is offered to students from across Canada and, over the last four years, has attracted participants from nearly every Canadian university involved in photonics research. The course takes students through a full design cycle of a photonic circuit, including theory, modelling, design, and experimentation.

Grating-coupled silicon microring resonators

We propose to integrate grating-assisted asymmetric couplers with microring resonators for selective resonance excitation and control of coupling efficiency. A grating-coupled microring add-drop filter is experimentally demonstrated using a silicon-on-insulator technology compatible with complementary metal-oxide-semiconductor processing. A dominant longitudinal mode with a side-mode suppression ratio of 8 dB has been obtained across a broad spectral range of over 130 nm. The selected mode shows an out-of-band-rejection ratio of 19 dB and a quality factor (Q) of 25 000. The concept of integrating grating-assisted couplers for mode selectivity can be applied to other microring-based devices for high-Q, single-mode operations.

Narrow-band transmission filter using phase-shifted Bragg gratings in SOI waveguide

We present an integrated transmission filter using phase-shifted Bragg gratings in silicon-on-insulator waveguides fabricated by deep-ultraviolet lithography. The measured resonant transmission band has a narrow linewidth of ~15 pm with a quality factor of ~100,000.

Broadband 2 × 2 adiabatic 3 dB coupler using silicon-on-insulator sub-wavelength grating waveguides.

We report on a compact, broadband, 2×2 adiabatic 3 dB coupler using sub-wavelength gratings (SWGs) for silicon-on-insulator waveguides. In our device, two SWG waveguides that support two transverse electric modes and have tapered waveguide widths were used to achieve an adiabatic mode evolution of the two-waveguide system for broadband 3 dB power splitting. We present results for a SWG adiabatic 3 dB coupler that has an overall coupler length of 50 μm and achieves broadband power splitting over a 130 nm wavelength range with an imbalance of no greater than ±0.3  dB and with low excess losses of less than 0.5 dB.