Hanako Okuno

Production of Carbon Nanotubes and Other Nanostructures Via Continuous 3‐Phase AC Plasma Processing

Abstract The highly flexible plasma system allows the independent flow control of plasma gas, carbonaceous feedstock and metal catalyst. Further important control parameters include current intensity and product quenching rate yielding in an excellent control of the thermal history of the carbon products. Temperature profiles measured along the reactive flow of carbon particles are presented, mapping time–temperature relations for typical operating conditions. In addition, the principle product families are presented. From the characteristics observed and NT product analysis, it is concluded that the AC plasma technology shows a significant potential for the continuous production of bulk quantities of carbon‐based nanotubes of controlled properties and novel tube‐like nanostructures.

No cytotoxicity or genotoxicity of graphene and graphene oxide in murine lung epithelial FE1 cells in vitro.

Graphene and graphene oxide receive much attention these years, because they add attractive properties to a wide range of applications and products. Several studies have shown toxicological effects of other carbon‐based nanomaterials such as carbon black nanoparticles and carbon nanotubes in vitro and in vivo. Here, we report in‐depth physicochemical characterization of three commercial graphene materials, one graphene oxide (GO) and two reduced graphene oxides (rGO) and assess cytotoxicity and genotoxicity in the murine lung epithelial cell line FE1. The studied GO and rGO mainly consisted of 2–3 graphene layers with lateral sizes of 1–2 µm. GO had almost equimolar content of C, O, and H while the two rGO materials had lower contents of oxygen with C/O and C/H ratios of 8 and 12.8, respectively. All materials had low levels of endotoxin and low levels of inorganic impurities, which were mainly sulphur, manganese, and silicon. GO generated more ROS than the two rGO materials, but none of the graphene materials influenced cytotoxicity in terms of cell viability and cell proliferation after 24 hr. Furthermore, no genotoxicity was observed using the alkaline comet assay following 3 or 24 hr of exposure. We demonstrate that chemically pure, few‐layered GO and rGO with comparable lateral size (> 1 µm) do not induce significant cytotoxicity or genotoxicity in FE1 cells at relatively high doses (5–200 µg/ml). Environ. Mol. Mutagen. 57:469–482, 2016.

A Survey of Carbon Nanotube Interconnects for Energy Efficient Integrated Circuits

This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design.

Tailor-made carbon nanomaterials for bulk applications via high-intensity arc plasma

Abstract Different families of carbon nanostructures produced by a continuous plasma process are presented. Due to the flexibility of this original technology, properties of classical carbon black products can be adjusted more freely during synthesis and an even wider range of parameters is accessible. Novel products with distinctive characteristics are observed when treating nanostructured material in the high‐temperature plasma. Evaluation of the application properties of selected materials indicates in certain cases an excellent performance. Plasma‐synthesised or plasma‐treated carbon nanomaterials have an important potential to improve the performance of carbon‐black‐containing materials.

Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe2 monolayer

In this work, we study growth and migration of atomic defects in MoSe2 on graphene using multiple advanced transmission electron microscopy techniques to explore defect behavior in vdW heterostructures. A MoSe2/graphene vdW heterostructure is prepared by a direct growth of both monolayers, thereby attaining an ideal vdW interface between the monolayers. We investigate the intrinsic defects (inversion domains and grain boundaries) in synthesized MoSe2, their evolution amid growth processing steps, and their influence on the formation and movement of extrinsic defects. Electron diffraction identifies a preferential interlayer orientation of 2° between MoSe2 and graphene, which is caused by the presence of intrinsic IBD defects. Extrinsic defects (point and line defects) are generated by in situ electron irradiation in the MoSe2 layer. Our results shed light on how to independently modify the MoSe2 atomic structure in vdW heterostructures for potential utilization in device processing.

Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study

In this paper, we report a hierarchical simulation study of the electromigration (EM) problem in Cu-carbon nanotube (CNT) composite interconnects. This paper is based on the investigation of the activation energy and self-heating temperature using a multiscale electrothermal simulation framework. We first investigate the electrical and thermal properties of Cu-CNT composites, including contact resistances, using the density functional theory and reactive force field approaches, respectively. The corresponding results are employed in macroscopic electrothermal simulations taking into account the self-heating phenomenon. Our simulations show that although Cu atoms have similar activation energies in both bulk Cu and Cu-CNT composites, Cu-CNT composite interconnects are more resistant to EM thanks to the large Lorenz number of the CNTs. Moreover, we found that a large and homogenous conductivity along the transport direction in interconnects is one of the most important design rules to minimize the EM.

The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations

We have performed statistical atomistic simulations with tight-binding approach to investigate the effects of randomly distributed mono-vacancy defects in metallic single-walled carbon nanotube (SWCNT) interconnects. We also extracted defective resistances from the atomistic simulations and performed circuit- level simulations to compare the performance of interconnects with and without defects. We have found that the defects induce significant fluctuations of SWCNT resistance with a median value showing an Ohmic-like behaviour. Fortunately, the resistance depends only on the diameter of SWCNTs and not on their chirality. Moreover, our circuit simulations show that the defective resistance induces important propagation time delay ratio that should be accounted for when designing CNT interconnects.