Hassan Raza

Controlled synthesis of bilayer graphene on nickel

We report a uniform and low-defect synthesis of bilayer graphene on evaporated polycrystalline nickel films. We used atmospheric pressure chemical vapor deposition with ultra-fast substrate cooling after exposure to methane at 1,000°C. The optimized process parameters, i.e., growth time, annealing profile and flow rates of various gases, are reported. By using Raman spectroscopy mapping, the ratio of 2D to G peak intensities (I2D/IG) is in the range of 0.9 to 1.6 over 96% of the 200 μm × 200 μm area. Moreover, the average ratio of D to G peak intensities (ID/IG) is about 0.1.

Integration of Self-Assembled Redox Molecules in Flash Memory Devices

Self-assembled monolayers (SAMs) of either ferrocenecarboxylic acid or 5-(4-Carboxyphenyl)-10,15,20-triphenyl-porphyrin-Co(II) (CoP) with a high- dielectric were integrated into the Flash memory gate stack. The molecular reduction-oxidation (redox) states are used as charge storage nodes to reduce charging energy and memory window variations. Through the program/erase operations over tunneling barriers, the device structure also provides a unique capability to measure the redox energy without strong orbital hybridization of metal electrodes in direct contact. Asymmetric charge injection behavior was observed, which can be attributed to the Fermi-level pinning between the molecules and the high- dielectric. With increasing redox molecule density in the SAM, the memory window exhibits a saturation trend. Three programmable molecular orbital states, i.e., CoP0, CoP1-, and CoP2-, can be experimentally observed through a charge-based nonvolatile memory structure at room temperature. The electrostatics is determined by the alignment between the highest occupied or the lowest unoccupied molecular orbital (HOMO or LUMO, respectively) energy levels and the charge neutrality level of the surrounding dielectric. Engineering the HOMO-LUMO gap with different redox molecules can potentially realize a multibit memory cell with less variation.

An extended Hückel theory based atomistic model for graphene nanoelectronics

An atomistic model based on the spin-restricted extended Hückel theory (EHT) is presented for simulating electronic structure and I–V characteristics of graphene devices. The model is applied to zigzag and armchair graphene nano-ribbons (GNR) with and without hydrogen passivation, as well as for bilayer graphene. Further calculations are presented for electric fields in the nano-ribbon width direction and in the bilayer direction to show electronic structure modification. Finally, the EHT Hamiltonian and NEGF (Nonequilibrium Green’s function) formalism are used for a paramagnetic zigzag GNR to show 2e2/h quantum conductance.

Zigzag graphene nanoribbons: bandgap and midgap state modulation

We study zigzag graphene nanoribbons with periodic edge roughness and report significant band gap opening. Interestingly, such nanoribbons have a near-midgap state with a small band width. We extensively study the electronic structure and the electric-field modulation of the conduction/valence bands and the near-midgap state. We summarize the important electronic-structure features like the band gap, the band width and the effective mass. We show that by applying an external electric field in the width direction, the band width of the near-midgap state varies linearly due to the edge localization, whereas the band gap remains almost constant. Additionally, the effective mass of these states can switch polarity from negative (hole-like) to positive (carrier-like) at the Γ-point with the field modulation.

Plasmon dispersion in semimetallic armchair graphene nanoribbons

The dispersion relations for plasmons in intrinsic and extrinsic semimetallic armchair graphene nanoribbons (acGNR) are calculated in the random phase approximation using the orthogonal

Incoherent transport through molecules on silicon in the vicinity of a dangling bond

{p}_{z}

Three-dimensional extended Hückel theory-nonequilibrium Green's function spin polarized transport model for Fe/MgO/Fe heterostructures

-orbital tight-binding method. Our model predicts new plasmons for acGNR of odd atomic widths,

Nonvolatile memory with molecule-engineered tunneling barriers

N=5,11,17,...

Statistical Metrology of Metal Nanocrystal Memories With 3-D Finite-Element Analysis

Our model further predicts plasmons in acGNR of even atomic widths,

Collective modes of massive Dirac fermions in armchair graphene nanoribbons

N=2,8,14,...