Edwin C. Kan

FinFET design considerations based on 3-D simulation and analytical modeling

Design considerations of the FinFET have been investigated by three-dimensional (3-D) simulation and analytical modeling in this paper. Short-channel effects (SCE) of the FinFET can be reasonably controlled by reducing either silicon fin height or fin thickness. Analytical solution of 3-D Laplaces equation is employed to establish the design equations for the subthreshold behavior in the fully depleted silicon fins. Based on the 3-D analytical electrostatic potential in the subthreshold region, the threshold voltage (V/sub th/) roll-off and the subthreshold swing (S) are estimated by considering the source barrier changes in the most leaky channel path. V/sub th/ roll-off is an exponential function of the ratio of effective channel length to drain potential decay length, which can then be expressed as a function of the fin thickness, the fin height and the gate oxide thickness. The drain-potential decay lengths of single-gate fully depleted SOI MOSFET (FDFET), double-gate MOSFET (DGFET), rectangular surrounding-gate MOSFET (SGFET), and FinFET are compared. The drain potential scaling length and V/sub th/ roll-off can be included into a universal relation for convenient comparison.

Armchair graphene nanoribbons: Electronic structure and electric-field modulation

We report electronic structure and electric-field modulation calculations in the width direction for armchair graphene nanoribbons (acGNRs) using a semiempirical extended Huckel theory. Important band-structure parameters are computed, e.g., effectives masses, velocities, and band gaps. For the three types of acGNRs, the

Operational and reliability comparison of discrete-storage nonvolatile memories: advantages of single- and double-layer metal nanocrystals

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Design Optimization of Metal Nanocrystal Memory—Part I: Nanocrystal Array Engineering

orbital tight-binding parameters are extracted if feasible. Furthermore, the effect of electric field in the width direction on acGNRs dispersion is explored. It is shown that for the two types of semiconducting acGNRs, an external electric field can reduce the band gap to a few meV with different quantitative behaviors.

Nonlinear dynamic modeling of micromachined microwave switches

Aggressive scaling of EEPROM to below 1,000 nm/sup 2/ bit area will enable more applications as low-power mobile systems. We have performed a critical comparison on discrete charge storage nodes, and established the advantages of metal nanocrystals in terms of programming/retention design trade-off and long-term endurance.

Flash Memory for Ubiquitous Hardware Security Functions: True Random Number Generation and Device Fingerprints

The three-dimensional (3D) electrostatics together with the modified Wentzel-Kramers-Brillouin tunneling model has been implemented to simulate the programming and retention characteristics of the metal nanocrystal (NC) memories. Good agreements with experimental data are first demonstrated to calibrate the transport parameters. In contrast to previous works, the 3D electrostatic effects investigated in this paper are proven very significant in the memory operations. Therefore, new design criteria of metal NC memories are investigated. Part I presents the physical model and the NC array design optimization. A sparse and large-size NC array, which is suitable for the one-dimensional narrow-channel memories, provides higher program/erase tunneling current density due to the field-enhancement effect and lower charging energy due to the large NC capacitance. On the other hand, to achieve a sufficient memory window, fast programming speed, and long retention time in the typical two-dimensional channel memories, a dense and large-size NC array is favorable while taking the tradeoff with the NC number density into account. Based on the same theoretical model, the authors continue in Part II to consider the design optimization when high-K dielectrics can be employed

Pulsed wave interconnect

Nonlinear dynamic lumped models of micromachined microwave switches have been formulated and successfully applied to analyses of transient characteristics and geometrical scaling. Parameter extraction through electrical measurements is summarized. The results are compared to transient quasi-2D simulations.

Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate

We demonstrate that unmodified commercial Flash memory can provide two important security functions: true random number generation and digital fingerprinting. Taking advantage of random telegraph noise (a type of quantum noise source in highly scaled Flash memory cells) enables high quality true random number generation at a rate up to 10Kbits / second. A scheme based on partial programming exploits process variation in threshold voltages to allow quick generation of many unique fingerprints that can be used for identification and authentication. Both schemes require no change to Flash chips or interfaces, and do not require additional hardware.

Asymmetric electric field enhancement in nanocrystal memories

Pulsed wave interconnect is proposed for global interconnect applications. Signals are represented by localized wave-packets that propagate along the interconnect lines at the local speed of light to trigger the receivers. Energy consumption is reduced through charging up only part of the interconnect lines and using the voltage doubling property of the receiver gate capacitances. In a 0.18-/spl mu/m CMOS technology case study, SPICE simulations show that pulsed wave interconnect can save up to 50% of energy and /spl sim/30% of chip area in comparison with the repeater insertion method. A proposed signal splitting structure provides reasonable isolations between different receivers. Measured S-parameters of 3.8-mm interconnect lines fabricated through CMOS foundry showed that the distortion and attenuation of a pico second signal are much less serious than the theoretical predictions. Pulsed wave interconnect also enables time division application of a single line to boost its bit rate capacity. The use of nonlinear transmission lines (NLTL) is also proposed to overcome pulse broadening and attenuation caused by dispersion and frequency-dependent losses. Pulsed waves on an NLTL may be generated, transmitted, split and detected with components realizable in bulk and SOI CMOS technologies. Tapered NLTL can be used for pulse compression. NLTL edge sharpening abilities may be applicable for signal rise time control.

A Novel Passive RFID Transponder Using Harmonic Generation of Nonlinear Transmission Lines

Heterogeneous floating-gates consisting of metal nanocrystals and silicon nitride (Si/sub 3/N/sub 4/) for nonvolatile memory applications have been fabricated and characterized. By combining the self-assembled Au nanocrystals and plasma-enhanced chemical vapor deposition (PECVD) nitride layer, the heterogeneous-stack devices can achieve enhanced retention, endurance, and low-voltage program/erase characteristics over single-layer nanocrystals or nitride floating-gate memories. The metal nanocrystals at the lower stack enable the direct tunneling mechanism during program/erase to achieve low-voltage operation and good endurance, while the nitride layer at the upper stack works as an additional charge trap layer to enlarge the memory window and significantly improve the retention time. The write/erase time of the heterogeneous stack is almost the same as that of the single-layer metal nanocrystals. In addition, we could further enhance the memory window by stacking more nanocrystal/nitride heterogeneous layers, as long as the effective oxide thickness from the control gate is still within reasonable ranges to control the short channel effects.