Helmut Baumgart

Realization of high breakdown voltage (>700 V) in thin SOI devices

The avalanche breakdown voltage of silicon on insulator (SOI) lateral diodes is investigated theoretically and experimentally. Theoretically, a condition is derived for achieving a uniform lateral electric field and thus optimizing the breakdown voltage. Using this condition, it is shown that, for SOI thicknesses below about 1 mu m, diode breakdown voltage increases with decreasing SOI layer thickness. Experimentally, breakdown voltages in excess of 700 V have been demonstrated for the first time on diodes having approximately 0.1- mu m-thick SOI layers and 2- mu m-thick buried oxide layers. The results obtained demonstrate the feasibility of making high-voltage thin-film SOI LDMOS transistors and, more importantly, the ability to integrate such devices with high-performance ultra-thin SOI CMOS circuits on a single chip.<<ETX>>

Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors

The dependence of avalanche breakdown voltage on the drift region length and buried oxide thickness of thin silicon-on-insulator (SOI) LDMOS transistors is reported. An ideal relationship between breakdown voltage and drift length is derived. Experimental SOI LDMOS transistors with near ideal breakdown voltages in the short-drift-length regime have been realized. Specifically, 380 V was achieved in a drift length of 20 mu m. Thin buried oxides are shown to be a major cause of deviation from this ideal. Experimental results verify this finding. An 860-V LDMOS transistor made in a 0.2 mu m-thick SOI layer is reported.<<ETX>>

Role of surface morphology in wafer bonding

The strain patterns detected by x‐ray topography in wafers bonded for silicon‐on‐insulator (SOI) technology were found related to the flatness nonuniformity of the original wafers. Local stresses due to the bonding process are estimated to be about 1×108 dynes/cm2. The stress is reduced about 100 times for the thin (0.5 μm) SOI films. Most of the wafer deformation occurs during room temperature mating of the wafers. The deformation is purely elastic even at 1200 °C. The magnitude of the stress appears insignificant for complimentary metal‐oxide‐semiconductor devices performance.

Cellular growth in micro-zone melted silicon

Abstract Dielectrically isolated single crystals of large extent may be fabricated by zone melting a thin silicon sheet that is encapsulated between SiO 2 layers. The material, however, contains a lineage structure of subgrain boundaries that we demonstrate arises via cellular growth at the trailing edge of the molten zone.

Synthesis of Nested Coaxial Multiple-Walled Nanotubes by Atomic Layer Deposition

Nested multiple-walled coaxial nanotube structures of transition metal oxides, semiconductors, and metals were successfully synthesized by atomic layer deposition (ALD) techniques utilizing nanoporous anodic aluminum oxide (AAO) as templates. In order to fabricate free-standing tube-in-tube nanostructures, successive ALD nanotubes were grown on the interior template walls of the AAO nanochannels. The coaxial nanotubes were alternated by sacrificial spacers of ALD Al(2)O(3), to be chemically removed to release the nanotubes from the AAO template. In this study, we synthesized a novel nanostructure with up to five nested coaxial nanotubes within AAO templates. This synthesis can be extended to fabricate n-times tube-in-tube nanostructures of different materials with applications in multisensors, broadband detectors, nanocapacitors, and photovoltaic cells.

A low-voltage nano-porous electroosmotic pump

A low-voltage electroosmotic (EO) micropump based on an anodic aluminum oxide (AAO) nano-porous membrane with platinum electrodes coated on both sides has been designed, fabricated, tested, and analyzed. The maximum flow rate of 0.074 ml min(-1) V(-1) cm(-2) for a membrane with porosity of 0.65 was obtained. A theoretical model, considering the head loss along the entire EO micropump system and the finite electrical double layer (EDL) effect on the flow rate, is developed for the first time to analyze the performance of the EO micropump. The theoretical and experimental results are in good agreement. It is revealed that the major head loss could remarkably decrease the flow rate, which thus should be taken into account for the applications of the EO micropump in various Lab-on-a-chip (LOC) devices. However, the effect of the minor head loss on the flow rate is negligible. The resulting flow rate increases with increasing porosity of the porous membrane and kappaa, the ratio of the radius of the nanopore to the Debye length.

Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO(2) charge trapping layers of varying thicknesses. The memory cells, which are fabricated by self-aligning in situ grown Si nanowires, exhibit high performance, i.e. fast program/erase operations, long retention time and good endurance. The effect of the trapping layer thickness of the nanowire memory cells has been experimentally measured and studied by simulation. As the thickness of HfO(2) increases from 5 to 30 nm, the charge trap density increases as expected, while the program/erase speed and retention remain the same. These data indicate that the electric field across the tunneling oxide is not affected by HfO(2) thickness, which is in good agreement with simulation results. Our work also shows that the Omega gate structure improves the program speed and retention time for memory applications.

Seeded oscillatory growth of Si over SiO2 by cw laser irradiation

Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.

Strains in Si‐on‐SiO2 structures formed by oxygen implantation: Raman scattering characterization

Low‐temperature Raman scattering measurements were carried out to characterize Si‐on‐SiO2 structures formed by oxygen implantation and subsequent furnace or lamp annealing. The experiments were conducted with 413.1 nm laser light to probe only the thin Si layers at the top of the structures. The Raman spectra of the furnace‐annealed samples are red shifted and broadened when compared with a virgin Si surface. The shifts and broadenings decrease with increasing annealing temperatures but they are still present in samples annealed above 1250 °C for 3 h. No shifts or broadenings affect the Raman peaks of the layers, which were lamp annealed at 1405 °C for half an hour. The red shifts indicate that the recrystallized Si layers are under tensile strains, whose origin is attributed to oxide precipitates. Quantitative estimates of the strains and associated stresses are obtained from the measured Raman shifts.

Raman scattering characterization of the microscopic structure of semi‐insulating polycrystalline Si thin films

Raman scattering experiments were carried out to study the microscopic structure of semi‐insulating polycrystalline Si (SIPOS) thin films prepared by low‐pressure chemical vapor deposition. The samples contain 18, 25, and 30 at. % of oxygen and after growth they were annealed at 900 and 1000 °C for 30 min. The Raman spectra show in the vibrational region of the optical frequencies of Si two bands, which arise from scattering in crystalline grains and disordered forms of Si. The behavior of these bands as a function of oxygen content and annealing temperatures was established in detail. The crystallinelike band peaks below the transverse optical frequency of Si at zone center and is broadened with respect to the Raman line of a Si wafer. From the broadenings, estimates of grain sizes are obtained. The band due to the disordered form of Si appears at frequencies above those of an extended network of amorphous Si. A model for the SIPOS microscopic structure is proposed in which the disordered Si corresponds ...