Henning M. Hauenstein
International Rectifier
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Henning M. Hauenstein.
international symposium on power semiconductor devices and ic's | 2012
Hsueh-Rong Chang; Jiankang Bu; Henning M. Hauenstein; Michael Wittmann; Jack Marcinkowski; Mark Pavier; Scott Palmer; Jim Tompkins
High power compact IGBT half bridge modules with a current rating of 300A and a blocking voltage of 650V using ultra thin IGBTs and diodes have been successfully developed with double-sided cooling capability. The wirebond-less package building block called COOLiR2DIE™ has a small area of 28.5 mm × 16 mm with a power rating 200 kVA, This is the most compact IGBT package reported today. A low on-state voltage of 1.6V at 300A is achieved in the wirebond-less package. The combination of lower on-state voltage and larger heat exchange area due to the solderable front metal (SFM), increases the IGBT module current carrying capability by 30%.
Archive | 2007
Henning M. Hauenstein
Archive | 2007
Henning M. Hauenstein
Archive | 2007
Henning M. Hauenstein
Archive | 2008
Henning M. Hauenstein
Archive | 2013
Henning M. Hauenstein
Archive | 2011
Henning M. Hauenstein
Archive | 2007
Henning M. Hauenstein; Jack Marcinkowski; Heny Lin
Archive | 2007
Henning M. Hauenstein
Archive | 2007
Henning M. Hauenstein